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    MICRONOZZLE ATOMIZERS AND METHODS OF MANUFACTURE AND USE
    12.
    发明申请
    MICRONOZZLE ATOMIZERS AND METHODS OF MANUFACTURE AND USE 审中-公开
    微生物原型及其制备和使用方法

    公开(公告)号：US20130037634A1

    公开(公告)日：2013-02-14

    申请号：US13640038

    申请日：2011-04-08

    申请人： Richard T. Miller ,  Neill Thornton

    发明人： Richard T. Miller ,  Neill Thornton

    IPC分类号： B05B1/00

    CPC分类号： F02M27/08 ,  F02M19/0228 ,  F02M61/186 ,  F02M69/041

    摘要： A micronozzle device can include at least two layers stacked together to form a nozzle array. Each layer can include a plurality of microchannels that have inlet ports and exit ports. The exit ports can be oriented substantially perpendicular, parallel, or in the general direction of a central fluid flow pathway.

    摘要翻译： 微喷嘴装置可以包括至少两层堆叠在一起以形成喷嘴阵列。 每个层可以包括具有入口端口和出口的多个微通道。 出口可以基本垂直，平行或沿中心流体流动路径的大致方向定向。

    Trench gate laterally diffused MOSFET devices and methods for making such devices
    13.
    发明授权
    Trench gate laterally diffused MOSFET devices and methods for making such devices 有权
    沟槽栅极横向扩散MOSFET器件和制造这种器件的方法

    公开(公告)号：US07033891B2

    公开(公告)日：2006-04-25

    申请号：US10269126

    申请日：2002-10-03

    申请人： Peter H. Wilson ,  Steven Sapp ,  Neill Thornton

    发明人： Peter H. Wilson ,  Steven Sapp ,  Neill Thornton

    IPC分类号： H01L21/336 ,  H01L21/8238 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062

    CPC分类号： H01L29/7834 ,  H01L29/0847 ,  H01L29/4175 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66621 ,  H01L29/66659 ,  H01L29/7831 ,  H01L29/7835

    摘要： A MOSFET device for RF applications that uses a trench gate in place of the lateral gate used in lateral MOSFET devices is described. The trench gate in the devices of the invention is provided with a single, short channel for high frequency gain. The device of the invention is also provided with an asymmetric oxide in the trench gate, as well as LDD regions that lower the gate-drain capacitance for improved RF performance. Such features allow these devices to maintain the advantages of the LDMOS structure (better linearity), thereby increasing the RF power gain. The trench gate LDMOS of the invention also reduces the hot carrier effects when compared to regular LDMOS devices by reducing the peak electric field and impact ionization. Thus, the devices of the invention will have a better breakdown capability.

    摘要翻译： 描述了用于RF应用的MOSFET器件，其使用沟槽栅极代替横向MOSFET器件中使用的横向栅极。 本发明的器件中的沟槽栅被提供有用于高频增益的单个短通道。 本发明的器件还在沟槽栅极中提供不对称氧化物，以及降低栅极 - 漏极电容以提高RF性能的LDD区域。 这些特征允许这些器件保持LDMOS结构的优点（更好的线性度），从而增加RF功率增益。 本发明的沟槽栅极LDMOS还通过减少峰值电场和冲击电离而与常规LDMOS器件相比降低了热载流子效应。 因此，本发明的装置将具有更好的击穿能力。