公开(公告)号：US07390698B2

公开(公告)日：2008-06-24

申请号：US11444595

申请日：2006-05-31

申请人： Neill Thornton ,  Dennis Lang

发明人： Neill Thornton ,  Dennis Lang

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L29/0657 ,  H01L23/49562 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/16245 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10158 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/05599 ,  H01L2924/00012

摘要： A semiconductor packaging technique provides for a semiconductor device with improved electrical and thermal performance. According to one embodiment of the invention, die edges are shaped before encapsulation to move the peripheral area of the die, which is more susceptible to stress and cracking, further inside the molding compound. This results in a device that can better withstand stress as well being more resistant to corrosion and other reliability problems caused by environmental conditions.

摘要翻译： 半导体封装技术提供具有改善的电和热性能的半导体器件。 根据本发明的一个实施例，在封装之前，模具边缘成形，以在模制化合物内进一步移动更容易受到应力和开裂的模具的周边区域的移动。 这导致能够更好地承受应力的装置以及更耐环境条件引起的腐蚀和其它可靠性问题。

公开(公告)号：US20060220241A1

公开(公告)日：2006-10-05

申请号：US11444595

申请日：2006-05-31

申请人： Neill Thornton ,  Dennis Lang

发明人： Neill Thornton ,  Dennis Lang

IPC分类号： H01L23/48

CPC分类号： H01L29/0657 ,  H01L23/49562 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/16245 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10158 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/05599 ,  H01L2924/00012

摘要： A semiconductor packaging technique provides for a semiconductor device with improved electrical and thermal performance. According to one embodiment of the invention, die edges are shaped before encapsulation to move the peripheral area of the die, which is more susceptible to stress and cracking, further inside the molding compound. This results in a device that can better withstand stress as well being more resistant to corrosion and other reliability problems caused by environmental conditions.

公开(公告)号：US06914416B2

公开(公告)日：2005-07-05

申请号：US10331113

申请日：2002-12-26

申请人： Brian Thomas ,  Jean-Marc Beaufils ,  Adrian Cogan ,  Bernard Dallemange ,  Gilles Gozlan ,  Jiyuan Luan ,  Neill Thornton ,  James Toth

发明人： Brian Thomas ,  Jean-Marc Beaufils ,  Adrian Cogan ,  Bernard Dallemange ,  Gilles Gozlan ,  Jiyuan Luan ,  Neill Thornton ,  James Toth

IPC分类号： H02J7/00 ,  H01M10/44 ,  H02H3/20 ,  H02H7/18 ,  H02H9/04

CPC分类号： H02J7/0031 ,  H01L25/16 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/1301 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/3011 ,  H02H7/18 ,  H02H9/042 ,  H02J7/0029 ,  H01L2924/00014 ,  H01L2924/00

摘要： A protection circuit for use with a charger and a chargeable element, such as a rechargeable lithium ion battery, comprises a shunt regulator having a threshold ON voltage coupled in parallel across the chargeable element, and a temperature-dependent resistor, e.g., a positive temperature coefficient device, coupled in series between the charger and the chargeable element. The temperature dependent resistor is thermally and electrically coupled to the shunt regulator, wherein the first variable resistor limits current flowing through the shunt regulator if the current reaches a predetermined level less than that which would cause failure of the regulator, due to ohmic heating of the regulator.

摘要翻译： 用于与充电器和可充电元件（例如可再充电锂离子电池）一起使用的保护电路包括并联稳压器，其具有并联在可充电元件上的阈值导通电压，以及温度依赖电阻器，例如正温度 系数装置，串联在充电器和可充电元件之间。 温度依赖电阻器被热和电耦合到并联调节器，其中如果电流达到比将导致调节器故障的电流低的预定电平，则第一可变电阻器限制流过分流调节器的电流，这是由于 调节器

公开(公告)号：US08030764B2

公开(公告)日：2011-10-04

申请号：US12419696

申请日：2009-04-07

申请人： Neill Thornton ,  Dennis Lang

发明人： Neill Thornton ,  Dennis Lang

IPC分类号： H01L23/34

CPC分类号： H01L29/41725 ,  H01L23/3107 ,  H01L23/49562 ,  H01L24/48 ,  H01L29/41775 ,  H01L29/45 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18165 ,  H01L2924/19041 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： The invention provides a semiconductor device that is thermally isolated from the printed circuit board such that the device operates at a higher temperature and radiates heat away from the printed circuit board. In another embodiment, the semiconductor is stacked onto a second device and optionally thermally isolated from the second device.

摘要翻译： 本发明提供了一种与印刷电路板热隔离的半导体器件，使得该器件在较高温度下工作并将辐射热量从印刷电路板上散出。 在另一个实施例中，将半导体层叠到第二器件上，并且可选地与第二器件热隔离。

公开(公告)号：US20080054496A1

公开(公告)日：2008-03-06

申请号：US11512860

申请日：2006-08-30

申请人： Neill Thornton ,  Dennis Lang

发明人： Neill Thornton ,  Dennis Lang

IPC分类号： H01L23/29

CPC分类号： H01L29/41725 ,  H01L23/3107 ,  H01L23/49562 ,  H01L24/48 ,  H01L29/41775 ,  H01L29/45 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18165 ,  H01L2924/19041 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： The invention provides a semiconductor device that is thermally isolated from the printed circuit board such that the device operates at a higher temperature and radiates heat away from the printed circuit board. In another embodiment, the semiconductor is stacked onto a second device and optionally thermally isolated from the second device.

摘要翻译： 本发明提供了一种与印刷电路板热隔离的半导体器件，使得该器件在较高温度下工作并将辐射热量从印刷电路板上散出。 在另一个实施例中，将半导体层叠到第二器件上，并且可选地与第二器件热隔离。

公开(公告)号：US07084488B2

公开(公告)日：2006-08-01

申请号：US10210515

申请日：2002-07-31

申请人： Neill Thornton ,  Dennis Lang

发明人： Neill Thornton ,  Dennis Lang

IPC分类号： H01L23/495

CPC分类号： H01L29/0657 ,  H01L23/49562 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/16245 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10158 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/05599 ,  H01L2924/00012

摘要： A semiconductor packaging technique provides for a semiconductor device with improved electrical and thermal performance. According to one embodiment of the invention, die edges are shaped before encapsulation to move the peripheral area of the die, which is more susceptible to stress and cracking, further inside the molding compound. This results in a device that can better withstand stress as well being more resistant to corrosion and other reliability problems caused by environmental conditions.

公开(公告)号：US06331763B1

公开(公告)日：2001-12-18

申请号：US09425519

申请日：1999-10-22

申请人： Brian Thomas ,  Jean-Marc Beaufils ,  Adrian Cogan ,  Bernard Dallemange ,  Gilles Gozlan ,  Jiyuan Luan ,  Neill Thornton ,  James Toth

发明人： Brian Thomas ,  Jean-Marc Beaufils ,  Adrian Cogan ,  Bernard Dallemange ,  Gilles Gozlan ,  Jiyuan Luan ,  Neill Thornton ,  James Toth

IPC分类号： H01M1044

CPC分类号： H02J7/0031 ,  H01L25/16 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/1301 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/3011 ,  H02H7/18 ,  H02H9/042 ,  H02J7/0029 ,  H01L2924/00014 ,  H01L2924/00

摘要： A protection circuit for use with a charger and a chargeable element, such as a rechargeable lithium ion battery, comprises a shunt regulator having a threshold ON voltage coupled in parallel across the chargeable element, and a temperature-dependent resistor, e.g., a positive temperature coefficient device, coupled in series between the charger and the chargeable element. The temperature dependent resistor is thermally and electrically coupled to the shunt regulator, wherein the first variable resistor limits current flowing through the shunt regulator if the current reaches a predetermined level less than that which would cause failure of the regulator, due to ohmic heating of the regulator.

摘要翻译： 用于与充电器和可充电元件（例如可再充电锂离子电池）一起使用的保护电路包括并联稳压器，其具有并联在可充电元件上的阈值导通电压，以及温度依赖电阻器，例如正温度 系数装置，串联在充电器和可充电元件之间。 温度依赖电阻器被热和电耦合到并联调节器，其中如果电流达到比将导致调节器故障的电流低的预定电平，则第一可变电阻器限制流过分流调节器的电流，这是由于 调节器

公开(公告)号：US20100117231A1

公开(公告)日：2010-05-13

申请号：US12690179

申请日：2010-01-20

申请人： Dennis Lang ,  Sonbol Vaziri ,  James Kent Naylor ,  Eric Woolsey ,  Chung-Lin Wu ,  Mike Gruenhagen ,  Neill Thornton

发明人： Dennis Lang ,  Sonbol Vaziri ,  James Kent Naylor ,  Eric Woolsey ,  Chung-Lin Wu ,  Mike Gruenhagen ,  Neill Thornton

IPC分类号： H01L23/498

CPC分类号： H01L23/3114 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2224/13099

摘要： A wafer level chip scale package (WLCSP) includes a semiconductor device with a plurality of solder bump pads, patterned passivation regions above each of the solder bump pads, a patterned under bump metallization (UBM) region on each of the solder bump pads and the passivation regions, a polyimide region over a portion of the UBM regions and the passivation regions, solder bumps formed on each of the UBM regions.

摘要翻译： 晶片级芯片级封装（WLCSP）包括具有多个焊料凸块焊盘的半导体器件，每个焊料凸块焊盘上方的图案化钝化区域，每个焊料凸块焊盘上的图案化凸点下金属化（UBM）区域，以及 钝化区域，UBM区域的一部分上的聚酰亚胺区域和钝化区域，形成在每个UBM区域上的焊料凸块。

公开(公告)号：US20090189678A1

公开(公告)日：2009-07-30

申请号：US12419696

申请日：2009-04-07

申请人： Neill Thornton ,  Dennis Lang

发明人： Neill Thornton ,  Dennis Lang

IPC分类号： H03K17/687 ,  H01L23/34

CPC分类号： H01L29/41725 ,  H01L23/3107 ,  H01L23/49562 ,  H01L24/48 ,  H01L29/41775 ,  H01L29/45 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18165 ,  H01L2924/19041 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： The invention provides a semiconductor device that is thermally isolated from the printed circuit board such that the device operates at a higher temperature and radiates heat away from the printed circuit board. In another embodiment, the semiconductor is stacked onto a second device and optionally thermally isolated from the second device.

摘要翻译： 本发明提供了一种与印刷电路板热隔离的半导体器件，使得该器件在较高温度下工作并将辐射热量从印刷电路板上散出。 在另一个实施例中，将半导体层叠到第二器件上，并且可选地与第二器件热隔离。

公开(公告)号：US20080054461A1

公开(公告)日：2008-03-06

申请号：US11847512

申请日：2007-08-30

申请人： Dennis Lang ,  Sonbol Vaziri ,  James Naylor ,  Eric Woolsey ,  Chung-Lin Wu ,  Mike Gruenhagen ,  Neill Thornton

发明人： Dennis Lang ,  Sonbol Vaziri ,  James Naylor ,  Eric Woolsey ,  Chung-Lin Wu ,  Mike Gruenhagen ,  Neill Thornton

IPC分类号： H01L23/48 ,  H01L21/00

CPC分类号： H01L24/05 ,  H01L23/3114 ,  H01L23/3192 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05599 ,  H01L2224/13006 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2224/13099 ,  H01L2924/00012 ,  H01L2224/05552

摘要： A wafer level chip scale package (WLCSP) includes a packaged semiconductor device with a plurality of solder bump pads, patterned passivation regions above each of the solder bump pads, a patterned under bump metallization (UBM) region on each of the solder bump pads and the passivation regions, a polyimide region over a portion of the UBM regions and the passivation regions, solder bumps formed on each of the UBM regions, and encapsulation material surrounding the semiconductor die except for at least a portion of each of the solder bumps.

摘要翻译： 晶片级芯片级封装（WLCSP）包括具有多个焊料凸块焊盘的封装半导体器件，每个焊料凸块焊盘上方的图案化钝化区域，每个焊料凸块焊盘上的图案化凸块下金属化（UBM）区域，以及 钝化区域，UBM区域和钝化区域的一部分上的聚酰亚胺区域，形成在每个UBM区域上的焊料凸块以及围绕半导体管芯的封装材料，除了每个焊料凸块的至少一部分之外。