DOUBLE PATTERNING PROCESS
    16.
    发明申请
    DOUBLE PATTERNING PROCESS 有权
    双重图案处理

    公开(公告)号:US20100062380A1

    公开(公告)日:2010-03-11

    申请号:US12549792

    申请日:2009-08-28

    Abstract: A double pattern is formed by coating a first positive resist composition onto a substrate, patternwise exposure to radiation, and development with alkaline developer to form a first resist pattern; applying heat and/or radiation to render the first resist pattern insoluble in a second solvent and in a second developer; coating a second resist composition on the first resist pattern, patternwise exposure to radiation, and development with second developer to form a second resist pattern. The resin in the first resist composition comprises recurring units of formula (1) wherein R1 is H, CH3 or CF3, m=1 or 2, n=0 or 1.

    Abstract translation: 通过将第一正性抗蚀剂组合物涂布在基材上,图案地暴露于辐射并用碱性显影剂显影以形成第一抗蚀剂图案形成双重图案; 施加热和/或辐射以使第一抗蚀剂图案不溶于第二溶剂和第二显影剂; 在第一抗蚀剂图案上涂覆第二抗蚀剂组合物,图案地暴露于辐射,并用第二显影剂显影以形成第二抗蚀剂图案。 第一抗蚀剂组合物中的树脂包含式(1)的重复单元,其中R 1是H,CH 3或CF 3,m = 1或2,n = 0或1。

    SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
    17.
    发明申请
    SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS 有权
    含硫酸钠聚合物,耐腐蚀组合物和图案处理

    公开(公告)号:US20090233223A1

    公开(公告)日:2009-09-17

    申请号:US12404245

    申请日:2009-03-13

    Abstract: A polymer comprising recurring units of a sulfonium salt represented by formula (1) is provided as well as a chemically amplified resist composition comprising the same. R1 is H, F, methyl or trifluoromethyl, R2 to R4 are C1-C10 alkyl or alkoxy, R5 is C1-C30 alkyl or C6-C14 aryl, k, m and n are 0 to 3. The recurring units generate a sulfonic acid upon exposure to high-energy radiation so as to facilitate effective scission of acid labile groups in the resist composition. The resist composition exhibits excellent resolution and a pattern finish with minimal LER.

    Abstract translation: 提供了包含由式(1)表示的锍盐的重复单元的聚合物以及包含该聚合物的化学放大抗蚀剂组合物。 R 1是H,F,甲基或三氟甲基,R 2至R 4是C 1 -C 10烷基或烷氧基,R 5是C 1 -C 30烷基或C 6 -C 14芳基,k,m和n是0至3.重复单元产生磺酸 暴露于高能量辐射下,以促进抗蚀剂组合物中酸不稳定基团的有效断裂。 抗蚀剂组合物以最小的LER显示出优异的分辨率和图案光洁度。

    NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS
    19.
    发明申请
    NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS 有权
    新型光电发生器,电阻组合和图案处理

    公开(公告)号:US20090061358A1

    公开(公告)日:2009-03-05

    申请号:US12204685

    申请日:2008-09-04

    Abstract: Photoacid generators generate sulfonic acids of formula (1a) or (1c) upon exposure to high-energy radiation. R1—COOCH(CF3)CF2SO3+H+  (1a) R1—O—COOCH(CF3)CF2SO3−H+  (1c) R1 is a C20-C50 hydrocarbon group having a steroid structure. The photoacid generators are compatible with resins and can control acid diffusion and are thus suited for use in chemically amplified resist compositions.

    Abstract translation: 光生酸发生剂在暴露于高能量辐射时产生式(1a)或(1c)的磺酸。 <?in-line-formula description =“In-line formula”end =“lead”?> R1-COOCH(CF3)CF2SO3 + H +(1a)<?in-line-formula description =“In-line Formulas”end =“tail”?> <?in-line-formula description =“In-line Formulas”end =“lead”?> R1-O-COOCH(CF3)CF2SO3-H +(1c) =“内联式”末端=“尾”→R1是具有类固醇结构的C20-C50烃基。 光致酸产生剂与树脂相容并且可以控制酸扩散,因此适用于化学增幅抗蚀剂组合物。

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