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    Zinc oxide based transparent electric conductor, sputtering target for forming of the conductor and process for producing the target
    14.
    发明授权
    Zinc oxide based transparent electric conductor, sputtering target for forming of the conductor and process for producing the target 有权
    氧化锌基透明导体，用于形成导体的溅射靶和用于制造靶的方法

    公开(公告)号：US08007693B2

    公开(公告)日：2011-08-30

    申请号：US12307380

    申请日：2007-05-23

    申请人： Masakatsu Ikisawa ,  Masataka Yahagi

    发明人： Masakatsu Ikisawa ,  Masataka Yahagi

    IPC分类号： H01B1/08 ,  B05D5/12

    CPC分类号： C23C14/086 ,  C04B35/453 ,  C04B35/645 ,  C04B2235/3217 ,  C04B2235/3272 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3291 ,  C04B2235/6562 ,  C04B2235/658 ,  C23C14/3414 ,  H01B1/08

    摘要： Provided is a zinc oxide transparent electric conductor having zinc oxide (ZnO) as its principal component, containing an element to become an n-type dopant to zinc oxide, containing metal M in which P(P=(G+H mix)/RT, wherein G is the Gibbs free energy at temperature T of the metal, H mix is the mixing enthalpy at temperature T of zinc oxide and the metal, R is the gas constant, and T is the temperature) as a parameter showing the wettability with zinc oxide is 6 or less and in which its resistivity is smaller than the resistivity of zinc oxide added with the n-type dopant, and wherein concentration of metal M in relation to the total atomicity of zinc and the n-type dopant and metal M, which are all metal atoms configuring the zinc oxide transparent electric conductor, is 0.05 to 2.0 at %. In the development of a transparent electric conductor that does not contain raw material In which is expensive and with concern of resource depletion, provided is a low resistivity transparent electric conductor by exceeding the limits of the conventional development technique of the single dopant method, presenting guidelines for selecting a secondary additive material effective in achieving low resistivity, and indicating types of specific materials and the appropriate concentration range.

    摘要翻译： 提供了以氧化锌（ZnO）为主要成分的氧化锌透明导电体，含有成为与氧化锌成为n型掺杂剂的元素，含有金属M，其中P（P =（G + H mix）/ RT ，其中G是金属温度T下的吉布斯自由能，H混合物是氧化锌和金属的温度T的混合焓，R是气体常数，T是温度）作为参数，表示润湿性 氧化锌为6以下，其电阻率小于添加有n型掺杂剂的氧化锌的电阻率，金属M的相对于锌的总原子数和n型掺杂剂和金属M的浓度 构成氧化锌透明导电体的全部金属原子为0.05〜2.0原子％。 在不含原材料的透明电导体的开发中，其中昂贵并且关心资源耗尽，提供了超过单一掺杂剂方法的常规开发技术的限制的低电阻率透明导电体，提供指导 用于选择有效实现低电阻率的次要添加剂材料，并指示特定材料的类型和适当的浓度范围。

    Method for producing a-IGZO oxide thin film
    20.
    发明授权
    Method for producing a-IGZO oxide thin film 有权
    一种IGZO氧化物薄膜的制造方法

    公开(公告)号：US08148245B2

    公开(公告)日：2012-04-03

    申请号：US12743593

    申请日：2008-12-24

    申请人： Masakatsu Ikisawa ,  Masataka Yahagi

    发明人： Masakatsu Ikisawa ,  Masataka Yahagi

    IPC分类号： H01L21/20 ,  H01L21/36

    CPC分类号： H01L29/7869 ,  C04B35/01 ,  C04B35/453 ,  C04B35/62218 ,  C04B35/6261 ,  C04B35/6263 ,  C04B35/62695 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6585 ,  C04B2235/77 ,  C23C14/086 ,  C23C14/3414 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/02631 ,  H01L29/66969 ,  Y10T428/31786

    摘要： There is provided a method for producing an a-IGZO oxide thin film by sputtering, which can control the carrier density of the film to a given value with high reproducibility. The method is an amorphous In—Ga—Zn—O based oxide thin film production method including: providing a sintered oxide material consisting essentially of indium (In), gallium (Ga), zinc (Zn), and oxygen (O) as constituent elements, wherein the ratio [In]/([In]+[Ga]) of the number of indium atoms to the total number of indium and gallium atoms is from 20% to 80%, the ratio [Zn]/([In]+[Ga]+[Zn]) of the number of zinc atoms to the total number of indium, gallium and zinc atoms is from 10% to 50%, and the sintered oxide material has a specific resistance of 1.0×10−1 Ωcm or less; and producing a film on a substrate by direct current sputtering at a sputtering power density of 2.5 to 5.5 W/cm2 using the sintered oxide material as a sputtering target.

    摘要翻译： 提供了通过溅射制造a-IGZO氧化物薄膜的方法，其可以以高再现性将膜的载流子密度控制在给定值。 该方法是一种无定形的In-Ga-Zn-O系氧化物薄膜的制造方法，其特征在于，提供基本上由铟（In），镓（Ga），锌（Zn）和氧（O） 元素，其中铟原子数与铟和镓原子总数的比[In] /（[In] + [Ga]）为20％至80％，[Zn] /（[In ] + [Ga] + [Zn]）相对于铟，镓和锌原子总数为10〜50％，烧结氧化物的电阻率为1.0×10-1 ＆OHgr; cm以下; 使用烧结氧化物作为溅射靶，以2.5〜5.5W / cm 2的溅射功率密度，通过直流溅射在基板上制造膜。