发明申请
- 专利标题： Cu-In-Ga-Se QUATERNARY ALLOY SPUTTERING TARGET
- 专利标题（中）： Cu-In-Ga-Se第四季度合金喷射目标
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申请号： US13501061申请日： 2010-09-28
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公开(公告)号： US20120205242A1公开(公告)日： 2012-08-16
- 发明人: Tomoya Tamura , Hideo Takami , Masakatsu Ikisawa , Masaru Sakamoto , Ryo Suzuki
- 申请人： Tomoya Tamura , Hideo Takami , Masakatsu Ikisawa , Masaru Sakamoto , Ryo Suzuki
- 申请人地址： JP Tokyo
- 专利权人： JX NIPPON MINING & METALS CORPORATION
- 当前专利权人： JX NIPPON MINING & METALS CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-259958 20091113
- 国际申请： PCT/JP2010/066820 WO 20100928
- 主分类号： C23C14/34
- IPC分类号： C23C14/34 ; C23C14/14
摘要：
A quaternary alloy sputtering target made of copper (Cu), indium (In), gallium (Ga) and selenium (Se), wherein the Cu—In—Ga—Se sputtering target has a composition that is represented by a composition formula of CuIn1−xGaxSe2−y (provided that x and y respectively represent atomic ratios), a composition range of 0
公开/授权文献
- US3147910A Vacuum pump apparatus 公开/授权日：1964-09-08
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