摘要:
A memory interface scheme reduces propagation delay by utilizing source-synchronous signaling to transmit address/command information to memory devices. A memory module in accordance with the present invention may include an address/command buffer that samples address/command information responsive to an address/command strobe signal and then passes the address/command information to a memory device on the module. A retiming circuit may be used to control the timing of read-return data from a memory device on the module.
摘要:
A plurality of memory modules interface through a daisy-chain providing a point-to-point connection for each memory module. The first and the last memory module in the daisy chain each connect to a separate memory controller port forming a ring circuit. A distinct set of signals connect the memory modules in each direction. A junction circuit in each memory module provides line isolation, a coupling to the adjoining memory modules in the daisy chain, or in the case of the first and last memory module in the daisy chain, a memory module and a memory controller, and a data synchronization circuit. Each junction circuit provides as well as voltage conversion so that the memory devices on a memory module operate at a different voltage than the memory controller, and multiplexing/de-multiplexing so that a lesser number of lines interface with each junction circuit.
摘要:
Techniques and mechanisms for exchanging information between a memory controller and a memory device. In an embodiment, a memory controller receives information indicating for a memory device a threshold number of pending consolidated activation commands to access that memory device. The threshold number indicated by the information is less than a theoretical maximum number of pending consolidated activation commands, the theoretical maximum number defined based on timing parameters of the memory device. In another embodiment, the memory controller limits communication of consolidated activation commands to the memory device based on the information indicating the threshold number.
摘要:
A system monitors data accesses to specific rows of memory to determine if a row hammer condition exists. The system can monitor accessed rows of memory to determine if the number of accesses to any of the rows exceeds a threshold associated with risk of data corruption on a row of memory physically adjacent to the row with high access. Based on the monitoring, a memory controller can determine if the number of accesses to a row exceeds the threshold, and indicate address information for the row whose access count reaches the threshold.
摘要:
Disclosed embodiments may include an apparatus having a segment wordline enable coupled to logic to selectively disable ones of a number of segment wordline drivers. The logic may partition a page of the apparatus to reduce power consumed through activation of the disabled ones of the number of segment wordlines. Other embodiments may be disclosed.
摘要:
A memory controller to implement targeted refreshes of potential victim rows of a row hammer event. In an embodiment, the memory controller receives an indication that a specific row of a memory device is experiencing repeated accesses which threaten the integrity of data in one or more victim rows physically adjacent to the specific row. The memory controller accesses default offset information in the absence of address map information which specifies an offset between physically adjacent rows of the memory device. In another embodiment, the memory controller determines addresses for potential victim rows based on the default offset information. In response to the received indication of the row hammer event, the memory controller sends for each of the determined plurality of addresses a respective command to the memory device, where the commands are for the memory device to perform targeted refreshes of potential victim rows.
摘要:
A method and system for error management in a memory device. In one embodiment of the invention, the memory device can handle commands and address parity errors and cyclic redundancy check errors. In one embodiment of the invention, the memory can detect whether a received command has any parity errors by determining whether the command bits or the address bits of the received command has any parity errors. If a parity error or cyclic redundancy check error in the received command is detected, an error handling mechanism is triggered to recover from the errant command.
摘要:
A method, apparatus, and system to enable a partial refresh scheme for DRAM which includes specifying at least a refresh start value, or a refresh start value and a refresh end value, to reduce the number of rows that must be refreshed during a refresh cycle, thus reducing the amount of power consumed during refresh.
摘要:
Methods and apparatus to improve throughput in memory devices are described. In one embodiment, memory throughput is increased via fine granularity of precharge management. In an embodiment, three separate precharge timings may be used, e.g., optimized per memory bank, per memory bank group, and/or per a memory device. Other embodiments are also disclosed and claimed.
摘要:
Memory device having banks of memory cells organized into two groups of banks that share control circuitry and a data buffer to provide an interface to a memory bus, but which are independently operable enough to support unrelated transactions with each group, and can be used to stagger read operations with shortened burst transfers so as to minimize dead time on a memory bus.