公开(公告)号：US09153737B2

公开(公告)日：2015-10-06

申请号：US13502241

申请日：2010-08-27

Applicant: Ok Hyun Nam ,  Dong Hun Lee ,  Geun Ho Yoo

Inventor： Ok Hyun Nam ,  Dong Hun Lee ,  Geun Ho Yoo

IPC: H01L21/00 ,  H01L33/16 ,  H01L29/20 ,  H01L31/0304 ,  H01L31/18 ,  H01L33/12 ,  H01L33/20 ,  H01L33/00 ,  H01L33/22 ,  H01S5/02 ,  H01S5/32 ,  H01S5/323

CPC classification number: H01L33/16 ,  H01L29/2003 ,  H01L31/0304 ,  H01L31/1856 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/12 ,  H01L33/20 ,  H01L33/22 ,  H01S5/0213 ,  H01S5/3202 ,  H01S5/32341 ,  H01S2304/12 ,  Y02E10/544 ,  Y02P70/521

Abstract: Provided are a high-quality non-polar/semi-polar semiconductor device having reduced defect density of a nitride semiconductor layer and improved internal quantum efficiency and light extraction efficiency, and a manufacturing method thereof. The method for manufacturing a semiconductor device is to form a template layer and a semiconductor device structure on a sapphire, SiC or Si substrate having a crystal plane for a growth of a non-polar or semi-polar nitride semiconductor layer. The manufacturing method includes: forming a nitride semiconductor layer on the substrate; performing a porous surface modification such that the nitride semiconductor layer has pores; forming the template layer by re-growing a nitride semiconductor layer on the surface-modified nitride semiconductor layer; and forming the semiconductor device structure on the template layer.

Abstract translation: 提供了具有降低氮化物半导体层的缺陷密度和提高的内部量子效率和光提取效率的高品质非极性/半极性半导体器件及其制造方法。 制造半导体器件的方法是在具有用于生长非极性或半极性氮化物半导体层的晶面的蓝宝石，SiC或Si衬底上形成模板层和半导体器件结构。 该制造方法包括：在基板上形成氮化物半导体层; 执行多孔表面改性使得氮化物半导体层具有孔; 通过在表面改性的氮化物半导体层上再生长氮化物半导体层来形成模板层; 以及在所述模板层上形成所述半导体器件结构。

公开(公告)号：US20140312427A1

公开(公告)日：2014-10-23

申请号：US14259912

申请日：2014-04-23

Applicant: Shigenobu Maeda ,  Sung-Bong Kim ,  Chang-Wook Moon ,  Dong-Hun Lee ,  Hyung-Soon Jang ,  Sang-Pil Sim

Inventor： Shigenobu Maeda ,  Sung-Bong Kim ,  Chang-Wook Moon ,  Dong-Hun Lee ,  Hyung-Soon Jang ,  Sang-Pil Sim

IPC: H01L27/11 ,  H01L27/092

CPC classification number: H01L27/0924 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L27/0207 ,  H01L27/1108

Abstract: Semiconductor devices are provided. The semiconductor devices include a first fin; a first gate electrode intersecting the first fin; a first elevated source and/or drain on respective sides of the first gate electrode on the first fin; and a first field dielectric film adjacent the first fin. The first field dielectric film includes a first part below a top surface of the first fin and a second part protruding from the first part and above a top surface of the first fin that makes contact with the first elevated source and/or drain.

Abstract translation: 提供半导体器件。 半导体器件包括第一鳍片; 与第一鳍相交的第一栅电极; 第一鳍片上的第一栅电极的相应侧上的第一升高源极和/或漏极; 以及与第一鳍相邻的第一场电介质膜。 第一场介电膜包括在第一翅片的顶表面下方的第一部分和从第一部分突出并且与第一升高源和/或漏极接触的第一鳍片的顶表面突出的第二部分。

公开(公告)号：US08805129B2

公开(公告)日：2014-08-12

申请号：US12704512

申请日：2010-02-11

Applicant: Young-Tak Han ,  Sang Ho Park ,  Dong-Hun Lee ,  Jang Uk Shin ,  Sang-Pil Han ,  Yongsoon Baek

Inventor： Young-Tak Han ,  Sang Ho Park ,  Dong-Hun Lee ,  Jang Uk Shin ,  Sang-Pil Han ,  Yongsoon Baek

IPC: G02B6/12 ,  G02B6/10 ,  G02B6/42

CPC classification number: G02B6/136 ,  G02B6/423 ,  G02B6/4231 ,  G02B2006/12176 ,  H01L24/11 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/00

Abstract: Provided is an optical device. The optical device includes a substrate having a waveguide region and a mounting region, a planar lightwave circuit (PLC) waveguide including a lower-clad layer and an upper-clad layer on the waveguide region of the substrate and a platform core between the lower-clad layer and the upper-clad layer, a terrace defined by etching the lower-clad layer on the mounting region of the substrate, the terrace including an interlocking part, an optical active chip mounted on the mounting region of the substrate, the optical active chip including a chip core therein, and a chip alignment mark disposed on a mounting surface of the optical active chip. The optical active chip is aligned by interlocking between the interlocking part of the terrace and the chip alignment mark of the optical active chip and mounted on the mounting region.

Abstract translation: 提供了一种光学装置。 光学装置包括具有波导区域和安装区域的基板，在基板的波导区域上包括下覆盖层和上覆盖层的平面光波导路（PLC）波导和位于基板的波导区域之间的平台铁心， 包覆层和上包层，通过蚀刻衬底的安装区域上的下包覆层限定的平台，所述露台包括互锁部分，安装在衬底的安装区域上的光学有源芯片，光学活动 芯片，其中包括芯片芯片，以及设置在光学有源芯片的安装表面上的芯片对准标记。 光学有源芯片通过在平台的互锁部分和光学有源芯片的芯片对准标记之间的互锁对准并且安装在安装区域上。

公开(公告)号：US08774243B2

公开(公告)日：2014-07-08

申请号：US13022985

申请日：2011-02-08

Applicant: Namje Kim ,  Kyung Hyun Park ,  Young Ahn Leem ,  Chul-Wook Lee ,  Sang-Pil Han ,  Dong-Hun Lee ,  Min Yong Jeon

Inventor： Namje Kim ,  Kyung Hyun Park ,  Young Ahn Leem ,  Chul-Wook Lee ,  Sang-Pil Han ,  Dong-Hun Lee ,  Min Yong Jeon

IPC: H01S5/00

CPC classification number: H01S5/06258 ,  H01S5/0612 ,  H01S5/06256 ,  H01S5/1096 ,  H01S5/1215 ,  H01S5/2222

Abstract: Provided are a dual mode semiconductor laser and a terahertz wave apparatus using the same. The dual mode semiconductor laser includes a distributed feedback laser structure section including a first diffraction grating on a substrate and a distributed Bragg reflector laser structure section including a second diffraction grating on the substrate. A first wavelength oscillated by the distributed feedback laser structure section and a second wavelength oscillated by the distributed Bragg reflector laser structure section are different from each other, and the distributed feedback laser structure section and the distributed Bragg reflector laser structure section share the same gain medium with each other.

Abstract translation: 提供了一种双模式半导体激光器和使用该双模半导体激光器的太赫兹波装置。 双模式半导体激光器包括分布反馈激光器结构部分，其包括在衬底上的第一衍射光栅和在衬底上包括第二衍射光栅的分布式布拉格反射器激光器结构部分。 由分布式反馈激光器结构部分振荡的第一波长和由分布布拉格反射器激光器结构部分振荡的第二波长彼此不同，分布反馈激光器结构部分和分布式布拉格反射器激光器结构部分共享相同的增益介质 与彼此。

公开(公告)号：US08761939B2

公开(公告)日：2014-06-24

申请号：US13217547

申请日：2011-08-25

Applicant: Dong Hun Lee ,  Dong Min Shin

Inventor： Dong Hun Lee ,  Dong Min Shin

IPC: G05D1/02

CPC classification number: G05D1/0225 ,  A47L2201/00 ,  A47L2201/02 ,  A47L2201/04 ,  G05D1/0242 ,  G05D1/0255 ,  G05D1/0274 ,  G05D2201/0203

Abstract: A robot system and a control method thereof in which, when a robot is located in a docking region, the robot calculates a distance by emitting infrared rays and detecting ultrasonic waves oscillated from a charging station, measures a distance from the charging station and performs docking with charging station. The distance between the robot and the charging station is precisely measured, thereby performing smooth and correct docking of the robot with the charging station. Further, the robot emits infrared rays only while performing docking with the charging station and thus reduces power consumption required for infrared ray emission, and wakes up a circuit in the charging station based on the infrared rays emitted from the robot and thus reduces power consumption of the charging station.

Abstract translation: 一种机器人系统及其控制方法，其中，当机器人位于停靠区域时，机器人通过发射红外线并检测从充电站振荡的超声波来计算距离，测量距离充电站的距离并进行对接 带充电站。 机器人与充电站之间的距离被精确地测量，从而使机器人与充电站的平滑和正确对接。 此外，机器人仅在与充电站对接的同时才发射红外线，因此降低了红外线发射所需的功率消耗，并且基于从机器人发射的红外线来唤醒充电站中的电路，从而降低了功率消耗 充电站。

公开(公告)号：USD700758S1

公开(公告)日：2014-03-04

申请号：US29427778

申请日：2012-07-23

Applicant: Jaeyoul Jeong ,  Dong Hun Lee ,  Sungjin Park ,  Shin Kim

Designer： Jaeyoul Jeong ,  Dong Hun Lee ,  Sungjin Park ,  Shin Kim

公开(公告)号：US08654233B2

公开(公告)日：2014-02-18

申请号：US13401309

申请日：2012-02-21

Applicant: Dong Hun Lee

Inventor： Dong Hun Lee

IPC: H04N5/374 ,  H04N5/335 ,  H01L27/00

CPC classification number: H04N5/378 ,  H04N5/3415 ,  H04N5/3742

Abstract: A The CMOS image sensor includes a pixel array including pixels arranged in a matrix of rows and columns and a row selection unit configured to generate selection signals for simultaneously or concurrently selecting at least two rows from the rows of the pixel array in response to a received row address. An analog-to-digital conversion unit is configured to convert pixel data output from the at least two rows selected from the pixel array into a digital video signal and output the digital video signal. The pixel array outputs the pixel data in response to the selection signals.

Abstract translation: A CMOS图像传感器包括像素阵列，其包括以行和列的矩阵排列的像素，以及行选择单元，其被配置为响应于所接收的像素阵列生成用于同时或并行地从像素阵列的行中选择至少两行的选择信号 行地址。 模数转换单元被配置为将从像素阵列中选择的至少两行输出的像素数据转换为数字视频信号并输出​​数字视频信号。 像素阵列响应于选择信号输出像素数据。

公开(公告)号：US08648545B2

公开(公告)日：2014-02-11

申请号：US12825445

申请日：2010-06-29

Applicant: Dong-Hun Lee ,  Dong-Hee Kim ,  Kyung-Goo Lee ,  Seok-Mun Choi

Inventor： Dong-Hun Lee ,  Dong-Hee Kim ,  Kyung-Goo Lee ,  Seok-Mun Choi

IPC: H05B37/02

CPC classification number: H05B33/0818 ,  H05B33/0827 ,  Y02B20/347

Abstract: A control device and an LED light emitting device using the same are provided and technology of providing a high contrast ratio to the LED light emitting device and allowing the LED light emitting device to perform a stable operation is disclosed. The LED light emitting device includes a DC/DC converter reference voltage generator that generates a DC/DC converter reference voltage so that a minimum level of a channel voltage having a largest LED voltage drop agrees with a predetermined minimum reference voltage by detecting a plurality of channel voltages corresponding to LED voltage drops of each of a plurality of LED channels LED and an output voltage controller that controls an output voltage of the DC/DC converter using a distribution voltage corresponding to an output voltage and the DC/DC converter reference voltage.

Abstract translation: 提供了一种控制装置和使用其的LED发光装置，并且公开了向LED发光装置提供高对比度并允许LED发光装置执行稳定操作的技术。 LED发光装置包括DC / DC转换器参考电压发生器，其产生DC / DC转换器参考电压，使得具有最大LED电压降的通道电压的最小电平与预定的最小参考电压一致，通过检测多个 对应于多个LED通道LED中的每一个的LED电压降的通道电压以及使用对应于输出电压和DC / DC转换器参考电压的分配电压来控制DC / DC转换器的输出电压的输出电压控制器。

公开(公告)号：US08644714B2

公开(公告)日：2014-02-04

申请号：US13325076

申请日：2011-12-14

Applicant: Oh-Kee Kwon ,  Chul-Wook Lee ,  Dong-Hun Lee ,  Young Ahn Leem ,  Yongsoon Baek

Inventor： Oh-Kee Kwon ,  Chul-Wook Lee ,  Dong-Hun Lee ,  Young Ahn Leem ,  Yongsoon Baek

IPC: H04B10/12

CPC classification number: H04J14/02 ,  G02B6/12007 ,  G02B6/124 ,  G02B6/2813 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/0268 ,  H01S5/1237 ,  H01S5/125 ,  H01S5/4012 ,  H01S5/4087 ,  H04B10/506

Abstract: Provided is a multi-wavelength optical source generator. The multi-wavelength optical source generator includes: a gain part generating a plurality of lights through a plurality of gain waveguides; a reflective part transmitting or reflecting lights provided from each of the plurality of gain waveguides according to a wavelength; and a multiplexing part multiplexing a plurality of lights transmitted and outputted through the reflective part.

Abstract translation: 提供了一种多波长光源发生器。 多波长光源发生器包括：通过多个增益波导产生多个光的增益部分; 根据波长从多个增益波导中的每一个提供的发射或反射光的反射部分; 以及多路复用部分，复用通过反射部分传输和输出的多个光。

公开(公告)号：US08625014B2

公开(公告)日：2014-01-07

申请号：US13074494

申请日：2011-03-29

Applicant: Kwi Sung Yoo ,  Seog Heon Ham ,  Dong Hun Lee ,  Min Ho Kwon ,  Wun-Ki Jung

Inventor： Kwi Sung Yoo ,  Seog Heon Ham ,  Dong Hun Lee ,  Min Ho Kwon ,  Wun-Ki Jung

IPC: H04N5/335 ,  H03F3/45

CPC classification number: H03F3/45188 ,  H03F2203/45352 ,  H04N5/357 ,  H04N5/3575 ,  H04N5/378

Abstract: An amplifier is provided. The amplifier includes a differential amplifier including a tail, a current mirror connected between output terminals of the differential amplifier and a power line receiving a supply voltage, and a first switching circuit for connecting and disconnecting one of the output terminals of the differential amplifier to and from the tail in response to a first switching signal.

Abstract translation: 提供放大器。 该放大器包括：差分放大器，包括尾部，连接在差分放大器的输出端子和接收电源电压的电源线之间的电流镜;以及第一开关电路，用于将差分放大器的输出端之一与 从尾部响应于第一个开关信号。