Abstract:
One embodiment relates to an apparatus for correcting aberrations introduced when an electron lens forms an image of a specimen and simultaneously forming an electron image using electrons with a narrow range of electron energies from an electron beam with a wide range of energies. A first electron beam source is configured to generate a lower energy electron beam, and a second electron beam source is configured to generate a higher energy electron beam. The higher energy beam is passed through a monochromator comprising an energy-dispersive beam separator, an electron mirror and a knife-edge plate that removes both the high and low energy tail from the propagating beam. Both the lower and higher energy electron beams are deflected by an energy-dispersive beam separator towards the specimen and form overlapping illuminating electron beams. An objective lens accelerates the electrons emitted or scattered by the sample. The electron beam leaving the specimen is deflected towards a first electron mirror by an energy-dispersive beam separator, which introduces an angular dispersion that disperses the electron beam according to its energy. A knife-edge plate, located between the beam separator and first electron mirror, is inserted that removes all of the beam with energy larger and smaller than a selected energy and filters the beam according to energy. One or more electron lenses focus the electron beam at the reflection surface of the first electron mirror so that after the reflection and another deflection by the same energy-dispersive beam separator the electron beam dispersion is removed. The dispersion-free and energy-filtered electron beam is then reflected in a second electron mirror which corrects one or more aberrations of the objective lens. After the second reflection, electrons are deflected by the magnetic beam separator towards the projection optics which forms a magnified, aberration-corrected, energy-filtered image on a viewing screen.
Abstract:
Provided is a charged particle beam device to improve energy solution of its energy filter. In one embodiment, a charged particle beam device includes a deflector to deflect charged particles emitted from a sample to an energy filter, and a change in brightness value with the change of voltage applied to the energy filter is found for each of a plurality of deflection conditions for the deflector, and a deflection condition such that a change in the brightness value satisfies a predetermined condition is set as the deflection condition for the deflector.
Abstract:
This electron scanning microscope comprises an electron source (102), electron optical systems (109, 110, 111) for exposing a sample (113) to primary electron beams (138), an electron detector (127) for detecting signal electrons (139) emitted from the sample, and a deceleration electrical field-type energy filter (108). The deceleration electrical field-type energy filter has a conductor thin film (304) for distinguishing the energy of signal electrons. With this configuration, it is possible to realize a scanning electron microscope having a deceleration electrical field-type energy filter with which high energy resolution is obtained, even in a case where the scanning electron microscope has a retarding optical system.
Abstract:
A transmission electron microscope (100) includes an electron beam source (2), an illumination lens (10), an objective lens (20), an intermediate lens system (30), a pair of transfer lenses (40) located behind the intermediate lens system (30), and an energy filter (60) for separating the electrons of the beam L transmitted through the specimen (S) according to energy. The transfer lenses (40) transfer the first image to the entrance crossover plane (S1) of the energy filter (60) and to transfer the second image to the entrance image plane (A1) of the filter (60). An image plane (A3) is formed between the first transfer lens (40a) and the second transfer lens (40b).
Abstract:
A mass spectrometer having an elongated rod set, the rod set having a first end, a second end, a plurality of rods and a central longitudinal axis is described as is a method operating same. Embodiments involve a) admitting ions into the rod set; b) producing an RF field between the plurality of rods to radially confine the ions in the rod set, wherein the RF field varies along at least a portion of a length of the rod set to provide, for each of the ions, a corresponding first axial force acting on the ion to push the ion in a first axial direction; and, c) for each of the ions, providing a corresponding second axial force to push the ion in a second axial direction opposite to the first axial direction; wherein the corresponding first axial force increases relative to the corresponding second axial force with radial displacement of the ion from the central longitudinal axis in any direction orthogonal to the central longitudinal axis such that the first corresponding axial force is less than the corresponding second axial force when the ion is less than a threshold radial distance from the central longitudinal axis and the corresponding first axial force exceeds the corresponding second axial force when the ion is radially displaced from the central longitudinal axis by more than the threshold radial distance in any direction orthogonal to the central longitudinal axis.
Abstract:
A scanning electron beam apparatus with an Auger spectrometer. The apparatus includes at least an electron column for generating a primary electron beam, a magnetic objective lens configured to focus the primary electron beam onto a surface of a target substrate, and a spectrometer configured to detect Auger electrons emitted from the surface of the target substrate. The magnetic objective lens applies a magnetic field strength greater than 10 Gauss and less than 50 Gauss at the surface of the target substrate. Other embodiments, aspects and features are also disclosed.
Abstract:
An energy filtering microscopy instrument is provided. An objective lens is disposed for reception of electrons in order to form an electron diffraction pattern in a backfocal plane of the objective lens. An entrance aperture disposed in the backfocal plane of the objective lens for filtering a slice of the electron diffraction pattern. A magnetic deflector has an entrance plane and an exit plane. The entrance aperture is disposed in the entrance plane. The magnetic deflector is disposed to receive the slice of the electron diffraction pattern and project an energy dispersed electron diffraction pattern to the exit plane. An exit aperture is disposed in the exit plane of the magnetic deflector for selection of desired electron energy of the energy dispersed electron diffraction pattern.
Abstract:
The present invention discloses a method and a device of monitoring an ion beam energy distribution by applying various voltages onto a conductive plate having an opening to generate various electric fields on the path passed by the ion beam so as to control the ion beam passing through said opening, and measuring the current created by the passing ion beam. The obtained relation between the applied voltages and the ion beam current therefore indicates the energy distribution of said ion beam. Furthermore, a step of adjusting the ion beam parameters in accordance with the measured relation between the voltages and current mentioned above can be performed, and the monitoring and adjusting steps can be repeated until the expected ion beam energy distribution is obtained, so that the purity/accuracy of the ion beam energy is improved.
Abstract:
A method for the electron-microscopic observation of a semiconductor arrangement is provided. It includes providing an electron microscopy optics for imaging secondary electrons emanating from the semiconductor arrangement within an extended object field on a position-sensitive detector, providing an illumination device for emitting a primary energy beam, directing the primary energy beam to at least the object field for extracting there secondary electrons from the semiconductor arrangement. The semiconductor arrangement comprises a region with an upper surface provided by a first material and a recess with a high aspect ratio which is surrounded by the upper surface and has a bottom provided by a second material.
Abstract:
Ion implantation systems are provided, comprising a dispersion system located between an ion source and a mass analyzer, that operates to selectively pass an extracted ion beam from the ion source toward the mass analyzer or to direct a dispersed ion beam toward the mass analyzer, where the dispersed ion beam has fewer ions of an undesired mass range than the extracted ion beam.