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    Thermally assisted magnetic writing device
    161.
    发明授权
    Thermally assisted magnetic writing device 有权
    热辅助磁写装置

    公开(公告)号：US08947916B2

    公开(公告)日：2015-02-03

    申请号：US13876390

    申请日：2011-09-29

    Applicant: Bernard Dieny ,  Jerome Moritz ,  Ricardo Sousa

    Inventor： Bernard Dieny ,  Jerome Moritz ,  Ricardo Sousa

    IPC: G11C11/00 ,  G11C11/16 ,  H01F10/32 ,  H01L43/08

    CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  H01F10/3218 ,  H01F10/3268 ,  H01F10/3272 ,  H01F10/3286 ,  H01L43/08

    Abstract: A thermally assisted magnetic writing device including a first magnetic layer known as the “reference layer,” a second magnetic layer known as the “storage layer” that presents a variable magnetization direction, a spacer situated between the reference layer and the storage layer and a first antiferromagnetic layer in contact with the storage layer, the first antiferromagnetic layer being able to trap the magnetization direction of the storage layer. The magnetic device also includes a stabilization layer made of a ferromagnetic material, the stabilization layer being in contact with the first antiferromagnetic layer.

    Abstract translation: 一种热辅助磁写入装置，包括被称为“参考层”的第一磁性层，被称为呈现可变磁化方向的“存储层”的第二磁性层，位于参考层和存储层之间的间隔件，以及 第一反铁磁层与存储层接触，第一反铁磁层能够捕获存储层的磁化方向。 磁性装置还包括由铁磁材料制成的稳定层，稳定层与第一反铁磁层接触。

    ARTIFICIAL MAGNETIC CONDUCTOR, AND ANTENNA
    163.
    发明申请
    ARTIFICIAL MAGNETIC CONDUCTOR, AND ANTENNA 有权
    人造磁导体和天线

    公开(公告)号：US20130285858A1

    公开(公告)日：2013-10-31

    申请号：US13883309

    申请日：2011-10-27

    Applicant: Francois Grange ,  Christophe Delaveaud ,  Bernard Viala

    Inventor： Francois Grange ,  Christophe Delaveaud ,  Bernard Viala

    IPC: H01Q15/00

    CPC classification number: H01Q15/0013 ,  H01F10/3218 ,  H01Q15/006 ,  Y10T428/2495

    Abstract: An artificial magnetic conductor having a surface impedance greater than 100 Ω, includes a ground plane, and a frequency-selective surface that is transparent for certain wavelengths and reflective for a range of wavelengths. The frequency-selective surface includes an array of conductive resonant elements arranged alongside one another in at least two different directions parallel to the ground plane. Each of these conductive resonant elements includes a sub-layer of ferromagnetic material having a relative permeability greater than 10 at a frequency of 2 GHz and having a thickness less than the skin thickness of the ferromagnetic material.

    Abstract translation: 具有大于100Ω的表面阻抗的人造磁性导体包括接地平面和对于某些波长是透明的并且对于一定波长范围是反射的频率选择表面。 频率选择表面包括在平行于接地平面的至少两个不同方向上彼此并排布置的导电谐振元件阵列。 这些导电谐振元件中的每一个包括在2GHz的频率下具有大于10的相对磁导率并且具有小于铁磁材料的表皮厚度的厚度的铁磁材料的子层。

    Magnetic device with weakly exchange coupled antiferromagnetic layer
    164.
    发明授权
    Magnetic device with weakly exchange coupled antiferromagnetic layer 有权
    具有弱交换耦合反铁磁层的磁性器件

    公开(公告)号：US08525602B2

    公开(公告)日：2013-09-03

    申请号：US13070249

    申请日：2011-03-23

    Applicant: Romney R. Katti

    Inventor： Romney R. Katti

    IPC: H01S1/06

    CPC classification number: H01F41/302 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3218 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08

    Abstract: A magnetic device is provided in one example that comprises a free layer having a magnetic anisotropy. The magnetic anisotropy is at least partially non-uniform. The magnetic device further comprises an antiferromagnetic layer adjacent to and weakly exchange coupled with the free layer, wherein the weak exchange coupling reduces the non-uniformity of the magnetic anisotropy of the free layer.

    Abstract translation: 在包括具有磁各向异性的自由层的一个实例中提供磁性装置。 磁各向异性至少部分不均匀。 磁性装置还包括与自由层相邻并且弱交换的反铁磁层，其中弱交换耦合减小了自由层的磁各向异性的不均匀性。

    MAGNETIC MEMORY CELL CONSTRUCTION
    165.
    发明申请
    MAGNETIC MEMORY CELL CONSTRUCTION 有权
    磁记忆体细胞结构

    公开(公告)号：US20130015543A1

    公开(公告)日：2013-01-17

    申请号：US13611029

    申请日：2012-09-12

    Applicant: Kaizhong Gao ,  Haiwen Xi

    Inventor： Kaizhong Gao ,  Haiwen Xi

    IPC: H01L29/82

    CPC classification number: H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3218 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/307 ,  H01L43/08 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1143

    Abstract: A magnetic tunnel junction cell having a free layer, a ferromagnetic pinned layer, and a barrier layer therebetween. The free layer has a central ferromagnetic portion and a stabilizing portion radially proximate the central ferromagnetic portion. The construction can be used for both in-plane magnetic memory cells where the magnetization orientation of the magnetic layer is in the stack film plane and out-of-plane magnetic memory cells where the magnetization orientation of the magnetic layer is out of the stack film plane, e.g., perpendicular to the stack plane.

    Abstract translation: 具有自由层，铁磁性钉扎层和它们之间的阻挡层的磁性隧道结电池。 自由层具有中心铁磁部分和径向靠近中心铁磁部分的稳定部分。 该结构可以用于其中磁性层的磁化取向在堆叠膜平面中的面内磁性存储单元和磁性层的磁化取向在堆叠膜之外的面外磁性存储单元 平面，例如垂直于堆叠平面。

    MAGNETIC MEMORY CELL CONSTRUCTION
    167.
    发明申请
    MAGNETIC MEMORY CELL CONSTRUCTION 有权
    磁记忆体细胞结构

    公开(公告)号：US20110089510A1

    公开(公告)日：2011-04-21

    申请号：US12977630

    申请日：2010-12-23

    Applicant: Kaizhong Gao ,  Haiwen Xi

    Inventor： Kaizhong Gao ,  Haiwen Xi

    IPC: H01L29/82

    CPC classification number: H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3218 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/307 ,  H01L43/08 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1143

    Abstract: A magnetic tunnel junction cell having a free layer, a ferromagnetic pinned layer, and a barrier layer therebetween. The free layer has a central ferromagnetic portion and a stabilizing portion radially proximate the central ferromagnetic portion. The construction can be used for both in-plane magnetic memory cells where the magnetization orientation of the magnetic layer is in the stack film plane and out-of-plane magnetic memory cells where the magnetization orientation of the magnetic layer is out of the stack film plane, e.g., perpendicular to the stack plane.

    Abstract translation: 具有自由层，铁磁性钉扎层和它们之间的阻挡层的磁性隧道结电池。 自由层具有中心铁磁部分和径向靠近中心铁磁部分的稳定部分。 该结构可以用于其中磁性层的磁化取向在堆叠膜平面中的面内磁性存储单元和磁性层的磁化取向在堆叠膜之外的面外磁性存储单元 平面，例如垂直于堆叠平面。

    Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer
    168.
    发明授权
    Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer 有权
    具有邻近自由铁磁层的氧化物反铁磁层的磁性器件

    公开(公告)号：US07859034B2

    公开(公告)日：2010-12-28

    申请号：US12425370

    申请日：2009-04-16

    Applicant: Yiming Huai ,  Zhitao Diao ,  Eugene Youjun Chen

    Inventor： Yiming Huai ,  Zhitao Diao ,  Eugene Youjun Chen

    IPC: H01L29/82

    CPC classification number: H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  H01F10/3218 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3263 ,  H01F10/3268 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10

    Abstract: Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers to switch the magnetization of the free ferromagnetic layer.

    Abstract translation: 诸如磁性或磁阻型隧道结（MTJ）和自旋阀的磁性多层结构具有磁性偏置层，该磁性偏置层形成在自由铁磁层的旁边并磁耦合到自由铁磁层，以实现针对由例如热波动和误差引起的波动的期望的稳定性 领域。 具有低纵横比的稳定的MTJ单元可以使用CMOS处理制造，例如使用磁偏置层的例如高密度MRAM存储器件和其他器件。 可以通过驱动垂直于层的写入电流来转换自由铁磁层的磁化，使用自旋转移感应开关对这种多层结构进行编程。

    Magnetic Devices Having Oxide Antiferromagnetic Layer Next To Free Ferromagnetic Layer
    170.
    发明申请
    Magnetic Devices Having Oxide Antiferromagnetic Layer Next To Free Ferromagnetic Layer 有权
    具有接近自由铁磁层的氧化物反铁磁层的磁性器件

    公开(公告)号：US20100072524A1

    公开(公告)日：2010-03-25

    申请号：US12425370

    申请日：2009-04-16

    Applicant: Yiming Huai ,  Zhitao Diao ,  Eugene Youjun Chen

    Inventor： Yiming Huai ,  Zhitao Diao ,  Eugene Youjun Chen

    IPC: H01L29/82

    CPC classification number: H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  H01F10/3218 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3263 ,  H01F10/3268 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10

    Abstract: Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers to switch the magnetization of the free ferromagnetic layer.

    Abstract translation: 诸如磁性或磁阻型隧道结（MTJ）和自旋阀的磁性多层结构具有磁性偏置层，该磁性偏置层形成在自由铁磁层的旁边并磁耦合到自由铁磁层，以实现针对由例如热波动和误差引起的波动的期望的稳定性 领域。 具有低纵横比的稳定的MTJ单元可以使用CMOS处理制造，例如使用磁偏置层的例如高密度MRAM存储器件和其他器件。 可以通过驱动垂直于层的写入电流来转换自由铁磁层的磁化，使用自旋转移感应开关对这种多层结构进行编程。

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