Abstract:
A method for producing an organolithium compound includes the step of reacting an aromatic compound or a halogenated unsaturated aliphatic compound and a lithiating agent in the presence of a coordinating compound containing three or more elements having a coordinating ability in a molecule, at least one thereof being a nitrogen element, or a coordinating compound containing three or more oxygen elements having a coordinating ability in a molecule, at least one of the groups containing the oxygen elements having a coordinating ability being a tertiary alkoxy group, at a temperature of −40° C. to 40° C.
Abstract:
A base portion is made of silicon carbide and has a main surface. At least one silicon carbide layer is provided on the main surface of the base portion in a manner exposing a region of the main surface along an outer edge of the main surface. At least one protection layer is provided on this region of the main surface of the base portion along the outer edge of the main surface. Thus, a silicon carbide substrate can be polished with high in-plane uniformity.
Abstract:
The semiconductor device includes a source line, a bit line, a signal line, a word line, memory cells connected in parallel between the source line and the bit line, a first driver circuit electrically connected to the source line and the bit line through switching elements, a second driver circuit electrically connected to the source line through a switching element, a third driver circuit electrically connected to the signal line, and a fourth driver circuit electrically connected to the word line. The memory cell includes a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, a second transistor including a second gate electrode, a second source electrode, and a second drain electrode, and a capacitor. The second transistor includes an oxide semiconductor material.
Abstract:
A semiconductor device monitors a voltage between a reference potential and an input potential and obtains a constant output potential regardless of a value of the voltage, after the voltage exceeds a predetermined threshold voltage in such a manner that the semiconductor device divides a voltage between the reference potential and the input potential using a plurality of first non-linear elements and at least one linear element to constantly generate a first bias voltage regardless of a value of the voltage, divides a voltage between the reference potential and the input potential using a plurality of second non-linear elements with reference to the first bias voltage to constantly generate a second bias voltage regardless of a value of the voltage, and determines the output potential with reference to the second bias voltage.
Abstract:
A particulate water absorbing agent of the present invention includes a water absorbent resin, having a cross-linking structure, whose surface has been cross-linked by adding a surface treatment agent, wherein: (i) a mass average particle diameter (D50) ranges from 200 to 600 μm and 95 to 100 wt % of a particulate water absorbing agent whose particle diameter ranges from less than 850 μm to not less than 150 μm is contained with respect to 100 wt % of whole the particulate water absorbing agent, and (ii) a logarithmic standard deviation (σζ) of particle size distribution ranges from 0.25 to 0.45, and (iii) a compressibility rate defined by a following equation ranges from 0 to 18%, and (iv) a surface tension of a supernatant liquid obtained in 4 minutes after dispersing 0.5 g of the particulate water absorbing agent in 50 ml of physiological saline whose temperature is 20° C. is 55 mN/m or more, the compressibility rate (%)=(P−A)/P×100 where P represents a tapped bulk density of the particulate water absorbing agent and A represents a loose bulk density of the particulate water absorbing agent.
Abstract:
A regulator circuit is provided which suppresses a variation in output voltage upon occurrence of a variation in input voltage or output current without any increase in steady-state power consumption.
Abstract:
A massage machine using a small size and high torque brushless DC motor includes a driving unit moved up and down along guide rails of a chair and a first motor for moving the driving unit up and down. A pair of treatment head bases are driven reciprocally in opposite directions to each other; and a second motor reciprocally drives the treatment head bases in opposite directions to each other. Treatment heads are respectively supported by the treatment head bases; and a third motor drives the treatment heads in a plane substantially perpendicular to a backrest. A control circuit drives the respective motors respectively independently of one another. Each motor is a brushless motor. A control circuit corrects, corresponding to a load imposed on the brushless DC motor, a waveform of a drive signal applied to a winding of the brushless DC motor so as to allow a current flowing through the winding of the brushless DC motor to have a substantially sinusoidal waveform making it possible to reduce discomfort due to motor noise, and to accurately control the motor rotation speed.
Abstract:
A linear oscillator and an electric toothbrush capable of emitting a low noise and of being assembled compact are provided. The linear oscillator, which reciprocates a shaft in an axial direction thereof, includes a plunger movable together with the shaft in the axial direction of the shaft, an elastic member for applying an axially acting resilient force to the plunger, an electromagnetic driving unit operable to reciprocate the plunger in the axial direction of the shaft at a resonant frequency when an alternating current is supplied thereto, and a fixing member restricting rotation of the plunger about an axis thereof within a predetermined angle. The electric toothbrush includes the linear oscillator and a brush head attached to the shaft for use in brushing teeth.
Abstract:
In a semiconductor device including a digital circuit portion and an analog circuit portion having a capacitor portion provided over a substrate, the capacitor portion is provided with a first wiring, a second wiring and a plurality of blocks each having a plurality of capacitor elements. Further, each the plurality of capacitor elements provided in each block has a semiconductor film having a first impurity region and a plurality of second impurity regions provided apart with the first impurity region interposed therebetween, and a conductive film provided over the first impurity region with an insulating film therebetween. A capacitor is formed from the first impurity region, the insulating film, and the conductive film.
Abstract:
A water-absorbent resin composition excelling in an absorption capacity under pressure, a first transition of initial absorption, and the small amount of rewet is provided. It comprises a water-absorbent resin obtained by aqueous solution polymerization and by reversed-phase suspension or reversed-phase emulsion polymerization and shows a CSF of not less than 20 g/g or an AAP of not less than 20 g/g or an SFC of not less than 10 (unit: 10−7×cm3×s×g−1). The gaps among resin particles owing to the difference in shape form optimum gap widths for the sake of capillarity. The resin composition consequently formed, therefore, manifests such excellent properties without the influences of a surfactant or an emulsifier.