公开(公告)号：US20130024802A1

公开(公告)日：2013-01-24

申请号：US13546720

申请日：2012-07-11

Applicant: Jun Zeng

Inventor： Jun Zeng

IPC: G06F3/048

CPC classification number: G06F9/451 ,  G06F9/454

Abstract: The present invention discloses a method and system for presetting an input mode for an input box, wherein the method comprises: in response to an input box being to receive an input, making a query for an input mode corresponding to the input box recorded in an input method; and presetting the input mode found through the query as the input mode for the input box. With the disclosed method and system, when a user needs to input information in an input box in accessing an application or the internet, the input method can automatically preset a desired input mode for the input box according to the use history of the input box, thus improving the user's experience.

Abstract translation: 本发明公开了一种用于预设输入框的输入模式的方法和系统，其中该方法包括：响应于输入框接收输入，对与记录在输入框中的输入框对应的输入模式进行查询 输入法; 并将通过查询找到的输入模式预设为输入框的输入模式。 利用所公开的方法和系统，当用户需要在输入框中输入访问应用或互联网中的信息时，输入方法可以根据输入框的使用历史自动预设输入框的期望输入模式， 从而改善用户体验。

公开(公告)号：US20120319199A1

公开(公告)日：2012-12-20

申请号：US13525908

申请日：2012-06-18

Applicant: Jun Zeng ,  Mohamed N. Darwish

Inventor： Jun Zeng ,  Mohamed N. Darwish

IPC: H01L27/088

CPC classification number: H01L29/7813 ,  H01L29/0623 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/66734

Abstract: Power devices, and related process, where both gate and field plate trenches have multiple stepped widths, using self-aligned process steps.

Abstract translation: 功率器件和相关工艺，其中栅极和场板沟槽都具有多个阶梯宽度，采用自对准工艺步骤。

公开(公告)号：US08310007B2

公开(公告)日：2012-11-13

申请号：US12834573

申请日：2010-07-12

Applicant: Mohamed N. Darwish ,  Jun Zeng

Inventor： Mohamed N. Darwish ,  Jun Zeng

IPC: H01L29/66

CPC classification number: H01L29/7813 ,  H01L21/823418 ,  H01L21/823814 ,  H01L27/088 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/407 ,  H01L29/408 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/4933 ,  H01L29/7816 ,  H01L29/7835

Abstract: The present application discloses new approaches to integrated power. Two new classes of structures each provide an integrated phase leg, in a process which can easily be integrated with low-voltage and/or peripheral circuits: in one class of disclosed structures, a lateral PMOS device is combined with an NMOS device which has predominantly vertical current flow. In another class of embodiments, a predominantly vertical n-channel device is used for the low-side switch, in combination with a lateral n-channel device. In either case, the common output node is preferably brought out at a backside contact. This device structure is advantageously used to construct complete power supply and/or voltage conversions circuits on a single chip (perhaps connected to external passive reactances).

Abstract translation: 本申请公开了集成电力的新方法。 两个新类别的结构每个都提供一个集成的相位支路，在一个可以容易地与低电压和/或外围电路集成的过程中：在一类公开的结构中，横向PMOS器件与NMOS器件组合，主要 垂直电流。 在另一类实施例中，主要垂直的n沟道器件与横向n沟道器件组合用于低侧开关。 在任一种情况下，公共输出节点优选地在背面接触处被拉出。 该器件结构有利地用于在单个芯片（可能连接到外部被动电抗）上构建完整的电源和/或电压转换电路。

公开(公告)号：US08294235B2

公开(公告)日：2012-10-23

申请号：US13085317

申请日：2011-04-12

Applicant: Jun Zeng ,  Mohamed N. Darwish ,  Shih-Tzung Su

Inventor： Jun Zeng ,  Mohamed N. Darwish ,  Shih-Tzung Su

IPC: H01L27/095 ,  H01L29/47 ,  H01L29/812 ,  H01L31/07 ,  H01L31/108

CPC classification number: H01L29/7811 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/4238

Abstract: A MOSFET switch which has a low surface electric field at an edge termination area, and also has increased breakdown voltage. The MOSFET switch has a new edge termination structure employing an N-P-N sandwich structure. The MOSFET switch also has a polysilicon field plate configuration operative to enhance any spreading of any depletion layer located at an edge of a main PN junction of the N-P-N sandwich structure.

Abstract translation: MOSFET开关，其在边缘终端区域具有低表面电场，并且还具有增加的击穿电压。 MOSFET开关具有采用N-P-N夹层结构的新边缘端接结构。 MOSFET开关还具有可操作地增强位于N-P-N夹层结构的主PN结的边缘处的任何耗尽层的任何扩展的多晶硅场板结构。

公开(公告)号：US20120043602A1

公开(公告)日：2012-02-23

申请号：US12806203

申请日：2010-01-11

Applicant: Jun Zeng ,  Mohamed N. Darwish ,  Richard A. Blanchard

Inventor： Jun Zeng ,  Mohamed N. Darwish ,  Richard A. Blanchard

IPC: H01L29/78

CPC classification number: H01L29/7813 ,  H01L21/26586 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/0878 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7811

Abstract: Improved MOSFET structures and processes, where multiple polysilicon embedded regions are introduced into the n+ source contact area. A top poly Field Plate is used to shield the electric field from penetrating into the channel, so that a very short channel can be used without jeopardizing the device drain-source leakage current. A bottom poly Field Plate is used to modulate the electric field distribution in the drift region such that a more uniform field distribution can be obtained.

Abstract translation: 改进的MOSFET结构和工艺，其中多个多晶硅嵌入区域被引入到n +源极接触区域。 顶部聚场板用于屏蔽电场穿透通道，使得可以使用非常短的通道，而不会危及器件漏源漏电流。 底部多场板用于调制漂移区域中的电场分布，使得可以获得更均匀的场分布。

公开(公告)号：US20120032258A1

公开(公告)日：2012-02-09

申请号：US13212747

申请日：2011-08-18

Applicant: Jun Zeng ,  Mohamed N. Darwish

Inventor： Jun Zeng ,  Mohamed N. Darwish

IPC: H01L29/78

CPC classification number: H01L29/7813 ,  H01L21/26586 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7811

Abstract: Improved highly reliable power RFP structures and fabrication and operation processes. The structure includes plurality of localized dopant concentrated zones beneath the trenches of RFPs, either floating or extending and merging with the body layer of the MOSFET or connecting with the source layer through a region of vertical doped region. This local dopant zone decreases the minority carrier injection efficiency of the body diode of the device and alters the electric field distribution during the body diode reverse recovery.

Abstract translation: 改进了高可靠性的功率RFP结构和制造和操作过程。 该结构包括在RFP沟槽下面的多个局部掺杂浓缩区域，浮动或延伸并与MOSFET的体层合并或者通过垂直掺杂区域的区域与源层连接。 该局部掺杂剂区域降低器件体二极管的少数载流子注入效率，并改变体二极管反向恢复期间的电场分布。

公开(公告)号：US07989293B2

公开(公告)日：2011-08-02

申请号：US12391450

申请日：2009-02-24

Applicant: Richard A. Blanchard ,  Jun Zeng

Inventor： Richard A. Blanchard ,  Jun Zeng

IPC: H01L21/336

CPC classification number: H01L29/7813 ,  H01L21/2257 ,  H01L29/086 ,  H01L29/407 ,  H01L29/408 ,  H01L29/41766 ,  H01L29/42356 ,  H01L29/4236 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/66734

Abstract: A vertical-current-flow device includes a trench which includes an insulated gate and which extends down into first-conductivity-type semiconductor material. A phosphosilicate glass layer is positioned above the insulated gate and a polysilicon layer is positioned above the polysilicate glass layer. Source and body diffusions of opposite conductivity types are positioned adjacent to a sidewall of the trench. A drift region is positioned to receive majority carriers which have been injected by the source, and which have passed through the body diffusion. A drain region is positioned to receive majority carriers which have passed through the drift region. The gate is capacitively coupled to control inversion of a portion of the body region. As an alternative, a dielectric layer may be used in place of the doped glass where permanent charge is positioned in the dielectric layer.

Abstract translation: 垂直电流装置包括沟槽，该沟槽包括绝缘栅极并向下延伸到第一导电型半导体材料中。 磷硅酸盐玻璃层位于绝缘栅极之上，多晶硅层位于聚硅酸盐玻璃层之上。 相反导电类型的源极和体扩散定位成与沟槽的侧壁相邻。 漂移区域被定位成接收已经被源注入并已经通过身体扩散的多数载体。 漏极区域被定位成接收已经通过漂移区域的多数载流子。 栅极电容耦合以控制身体区域的一部分的反转。 作为替代，可以使用电介质层代替在电介质层中定位永久电荷的掺杂玻璃。

公开(公告)号：US20110169894A1

公开(公告)日：2011-07-14

申请号：US13119601

申请日：2008-10-31

Applicant: Adel Jilani ,  Jun Zeng ,  Kenneth James Faase ,  Tony S. Cruz-Uribe ,  Michael G. Monroe

Inventor： Adel Jilani ,  Jun Zeng ,  Kenneth James Faase ,  Tony S. Cruz-Uribe ,  Michael G. Monroe

IPC: B41J2/04

CPC classification number: B41J2/14314

Abstract: An electrostatic liquid-ejection actuation mechanism includes a membrane, a frame, and one or more deformable beams. The frame has two sides and a number of cross members that are non-parallel to the two sides. The two sides and the cross members define one or more areas individually corresponding to one or more liquid chambers. The deformable beams are disposed between the membrane and the frame. The deformable beams individually correspond to the liquid chambers, and define a number of slits. Each slit is adjacent to one of the two sides of the frame. The deformable beams have a width that is less than a width of the liquid chambers, due at least to the slits.

Abstract translation: 静电液体喷射致动机构包括膜，框架和一个或多个可变形梁。 框架具有两侧和多个与两侧不平行的横向构件。 两侧和横向构件限定一个或多个单独对应于一个或多个液体室的区域。 可变形梁设置在膜和框架之间。 可变形梁单独对应于液体室，并且限定许多狭缝。 每个狭缝与框架的两侧之一相邻。 至少对于狭缝，可变形梁的宽度小于液体室的宽度。

公开(公告)号：US07911021B2

公开(公告)日：2011-03-22

申请号：US12418808

申请日：2009-04-06

Applicant: Amit Paul ,  Mohamed N. Darwish ,  Jun Zeng

Inventor： Amit Paul ,  Mohamed N. Darwish ,  Jun Zeng

IPC: H01L29/02

CPC classification number: H01L29/0649 ,  H01L29/0692 ,  H01L29/408 ,  H01L29/7811 ,  H01L29/8611

Abstract: A high-voltage termination structure includes a peripheral voltage-spreading network. One or more trench structures are connected at least partly in series between first and second power supply voltages. The trench structures include first and second current-limiting structures connected in series with a semiconductor material, and also includes permanent charge in a trench-wall dielectric. The current-limiting structures in the trench structures are jointly connected in a series-parallel ladder configuration. The current-limiting structures, in combination with the semiconductor material, provide a voltage distribution between the core portion and the edge portion.

Abstract translation: 高压端接结构包括外围电压分布网络。 一个或多个沟槽结构至少部分地串联连接在第一和第二电源电压之间。 沟槽结构包括与半导体材料串联连接的第一和第二限流结构，并且还包括在沟槽壁电介质中的永久电荷。 沟槽结构中的电流限制结构以串联 - 并联梯形结构共同连接。 与半导体材料组合的限流结构提供了芯部分和边缘部分之间的电压分布。

公开(公告)号：US07910439B2

公开(公告)日：2011-03-22

申请号：US12392131

申请日：2009-02-25

Applicant: Mohamed N. Darwish ,  Jun Zeng

Inventor： Mohamed N. Darwish ,  Jun Zeng

IPC: H01L21/336

CPC classification number: H01L29/7813 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/456 ,  H01L29/66348 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397

Abstract: A manufacturing process and design structure for a super self-aligned trench power MOSFET. A plurality of super self-aligned trenches of different depths are formed into the body layer and epitaxial layers, preferably by using a multilayer stack of dielectric material etched to form spacers. Respective trenches contain gate conductors, body-contact conductors, and preferably a third trench containing a recessed field plate. This results in a MOSFET structure having high cell density and low gate charges and gate-drain charges.

Abstract translation: 超自对准沟槽功率MOSFET的制造工艺和设计结构。 优选地，通过蚀刻以形成间隔物的电介质材料的多层堆叠，将不同深度的多个超自对准沟槽形成为主体层和外延层。 相应的沟槽包含门导体，体接触导体，并且优选地包含含有凹陷场板的第三沟槽。 这导致具有高电池密度和低栅极电荷和栅极 - 漏极电荷的MOSFET结构。