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公开(公告)号:US12084708B1
公开(公告)日:2024-09-10
申请号:US17088221
申请日:2020-11-03
IPC分类号: H03B5/36 , B01L3/00 , C12Q1/18 , G01N29/036 , G01N29/32 , H03B5/12 , H03B5/32 , H03H9/02 , H03H9/145 , H03H9/25
CPC分类号: C12Q1/18 , B01L3/502715 , G01N29/036 , G01N29/32 , H03B5/1203 , H03B5/326 , H03B5/362 , H03H9/02543 , H03H9/02551 , H03H9/02559 , H03H9/02637 , H03H9/02937 , H03H9/145 , H03H9/25 , B01L2300/0663 , B01L2400/0436 , H03B2200/0022 , H03B2200/0038
摘要: The present invention relates to systems including an acoustic wave resonator and an active shunt capacitance cancelling oscillator circuit. Such systems can be used in biosensing methods, while avoiding impedance distortion and phase shift anomalies.
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公开(公告)号:US12068739B2
公开(公告)日:2024-08-20
申请号:US17404121
申请日:2021-08-17
申请人: X-Celeprint Limited
发明人: Christopher Bower , Matthew Meitl , Ronald S. Cok
IPC分类号: H03H9/64 , H03H3/00 , H03H3/007 , H03H3/02 , H03H3/08 , H03H9/00 , H03H9/02 , H03H9/05 , H03H9/54 , H03H9/56
CPC分类号: H03H9/64 , H03H3/007 , H03H3/02 , H03H3/08 , H03H9/02015 , H03H9/02543 , H03H9/0509 , H03H9/0585 , H03H9/54 , H03H9/564 , H03H2009/0019
摘要: A compound acoustic wave filter device comprises a support substrate having an including two or more circuit connection pads. An acoustic wave filter includes a piezoelectric filter element and two or more electrodes. The acoustic wave filter is micro-transfer printed onto the support substrate. An electrical conductor electrically connects one or more of the circuit connection pads to one or more of the electrodes.
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公开(公告)号:US12028047B2
公开(公告)日:2024-07-02
申请号:US17314394
申请日:2021-05-07
发明人: Roozbeh Tabrizian
CPC分类号: H03H9/25 , H03H9/02543 , H03H9/14544
摘要: An adaptive RF acoustic resonator contains tunable and switchable hybrid surface-bulk acoustic waves (SAW-BAW). The surface and bulk acoustic waves couple for the spectral sensing and configurable filtering. The acoustic resonator includes a piezoelectric or ferroelectric layer, such as a SLAIN layer, which is patterned into interdigital transducers, and an intermediate layer of AlGaN—GaN, which is built on a SiC substrate. The device is protected under a plastic packaging cap. An external tuning voltage applies on the acoustic resonator to generate the tunable frequency and bandwidth of the bulk and surface acoustic waves. An RF switch generates an electric field to suppress a residual polarization during acoustic resonator switching. The bulk acoustic wave excited in the piezoelectric or ferroelectric layer couples with the surface acoustic wave propagating in the intermediate layer. The Sc concentration in the ferroelectric layer exceeds 28%. The transducers are capped with Bragg reflectors made of multiple Al and W layers.
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公开(公告)号:US11881608B2
公开(公告)日:2024-01-23
申请号:US17088637
申请日:2020-11-04
发明人: Tomoya Sato
CPC分类号: H01P1/20 , H03H9/02543 , H03H9/14582 , H03H9/25 , H03H9/6406 , H03H9/6483
摘要: A filter device includes a first filter connected between a common terminal and a first individual terminal, and a second filter connected between the common terminal and a second individual terminal. A pass band of the second filter is in a frequency range lower than a pass band of the first filter. The first filter includes SAW resonators, at least one of which includes divided resonators connected in parallel with each other. Each of the divided resonators includes an IDT. A pitch of the IDT of one of the divided resonators is different from that of another of the divided resonators.
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公开(公告)号:US11863161B2
公开(公告)日:2024-01-02
申请号:US17108039
申请日:2020-12-01
发明人: Tetsu Takahashi , Toru Yamaji , Takuma Kuzushita
CPC分类号: H03H9/6483 , H03H9/02543 , H03H9/145 , H03H9/25
摘要: An acoustic wave filter includes a first resonance circuit including a first series arm resonator and a first capacitive element. The first series arm resonator is provided on a path connecting a first terminal and a second terminal. The first capacitive element is coupled in parallel with the first series arm resonator. The first series arm resonator includes a first divided resonator and a second divided resonator coupled in series with each other. The first resonance circuit includes a second resonance circuit including the first divided resonator and a second capacitive element coupled in parallel with the first divided resonator.
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公开(公告)号:US11800803B2
公开(公告)日:2023-10-24
申请号:US16306822
申请日:2017-05-30
申请人: Soitec
发明人: Marcel Broekaart
IPC分类号: H01L41/312 , H01L41/08 , H03H3/10 , H03H9/02 , H10N30/072 , H10N30/00
CPC分类号: H10N30/072 , H03H3/10 , H03H9/02543 , H03H9/02574 , H10N30/1051 , H10N30/10516
摘要: A hybrid structure for a surface acoustic wave device comprises a useful layer of piezoelectric material having a first free surface and a second surface disposed on a support substrate that has a lower coefficient of thermal expansion than that of the useful layer, wherein the useful layer comprises an area of nanocavities.
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117.
公开(公告)号:US20230327635A1
公开(公告)日:2023-10-12
申请号:US18193424
申请日:2023-03-30
发明人: Michael David Hill , Alexandre Augusto Shirakawa , Benjamin Paul Abbott , Stefan Bader , David Albert Feld , Kwang Jae Shin
CPC分类号: H03H9/02031 , H03H9/173 , H03H9/176 , H03H9/02543 , H03H9/02834 , H03H9/25 , H03H9/568 , H03H9/6483 , C01B32/907 , C01P2006/40 , C01P2002/52
摘要: Aspects of this disclosure relate to an acoustic wave device with a piezoelectric layer that includes a wurtzite structure. The wurtzite structure can include a group 2 element and have a high acoustic velocity. For example, the wurtzite structure can include a carbide and the group 2 element can be carbon of the carbide. The high acoustic velocity can be over 10,000 meters per second. Related piezoelectric layers, acoustic wave filters, radio frequency modules, wireless communication devices, and methods are disclosed.
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118.
公开(公告)号:US11671071B2
公开(公告)日:2023-06-06
申请号:US17945139
申请日:2022-09-15
发明人: Takuya Koyanagi , Hideki Iwamoto
CPC分类号: H03H9/02543 , H03H9/02834 , H03H9/145 , H03H9/25
摘要: An acoustic wave device includes a silicon oxide film, a piezoelectric body, and an interdigital transducer electrode laminated on a support substrate made of silicon. Where a wave length that is determined by an electrode finger pitch of the interdigital transducer electrode is λ, a thickness of the support substrate is greater than or equal to about 3λ. An acoustic velocity of the first higher mode that propagates through the piezoelectric body is an acoustic velocity VSi=(V1)1/2 of bulk waves that propagate in the support substrate, which is determined by V1 out of solutions V1, V2, and V3 of x derived from the mathematical expression Ax3+Bx2+Cx+D=0, or higher than VSi.
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公开(公告)号:US20190253035A1
公开(公告)日:2019-08-15
申请号:US16314832
申请日:2018-02-14
发明人: Kazuhiko YAMANOUCHI
IPC分类号: H03H9/02 , H03H3/04 , H03H3/10 , H03H9/05 , H03H9/13 , H03H9/145 , H03H9/17 , H03H9/19 , H03H9/25 , H03H9/56 , H03H9/64
CPC分类号: H03H9/02842 , H03H3/02 , H03H3/04 , H03H3/10 , H03H9/02023 , H03H9/02031 , H03H9/02039 , H03H9/02102 , H03H9/0211 , H03H9/02543 , H03H9/02551 , H03H9/02559 , H03H9/0259 , H03H9/02637 , H03H9/02834 , H03H9/0561 , H03H9/13 , H03H9/145 , H03H9/17 , H03H9/174 , H03H9/176 , H03H9/19 , H03H9/25 , H03H9/562 , H03H9/564 , H03H9/6489 , H03H2003/0407
摘要: An acoustic wave element which can be reduced in size and produced relatively easily, practically used without using harmful substances, and can suppress a surface acoustic wave propagation loss, which has an excellent temperature coefficient of frequency and a velocity dispersion characteristic, and with which an increase in the reflection coefficient of interdigital transducers can be suppressed, and a method for manufacturing the acoustic wave element are provided. The acoustic wave element includes a pair of electrodes provided on both surfaces of a piezoelectric substrate, and a dielectric film provided on a first surface of the piezoelectric substrate so as to cover the electrode. The acoustic wave element alternatively includes interdigital transducers provided on a first surface of the piezoelectric substrate, and a dielectric film provided on the interdigital transducers, a gap between the interdigital transducers, and/or a second surface of the piezoelectric substrate.
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公开(公告)号:US09887347B2
公开(公告)日:2018-02-06
申请号:US15354319
申请日:2016-11-17
发明人: Makoto Kubota , Takanori Matsuda , Kaoru Miura
IPC分类号: B41J2/045 , H01L41/187 , B06B1/06 , B41J2/14 , H01L41/047 , H01L41/08 , H01L41/09 , H02N2/18 , H03H9/64 , G02B26/02 , G02B26/08 , H02N2/10 , H02N2/16 , H01L41/316 , H01L41/318 , H03H9/02
CPC分类号: H01L41/1871 , B06B1/06 , B06B1/0644 , B41J2/14233 , B41J2202/03 , G02B26/02 , G02B26/08 , G02B26/0833 , H01L41/047 , H01L41/0471 , H01L41/0815 , H01L41/09 , H01L41/0973 , H01L41/316 , H01L41/318 , H02N2/103 , H02N2/16 , H02N2/186 , H03H9/02015 , H03H9/02543 , H03H9/64
摘要: A piezoelectric element includes a substrate, a first electrode, a piezoelectric film and a second electrode that are sequentially placed in the above-mentioned order. The piezoelectric film contains oxides of Ba, Bi, Ti, Zr, Fe and Mn and has a perovskite structure, wherein the molar ratio y of Bi relative to the sum of Ba and Bi is 0.001≦y≦0.015, the molar ratio x of Zr relative to the sum of Ti, Zr, Fe and Mn is 0.010≦x≦0.060, the molar ratio z of Fe relative to the sum of Ti, Zr, Fe and Mn is 0.001≦z≦0.015, and the molar ratio m of Mn relative to the sum of Ti, Zr, Fe and Mn is 0.0020≦m≦0.0150, while the relationship between y and z is expressed by 0.90≦y/z≦1.10.
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