Beam shaping slit for small spot size transmission small angle X-ray scatterometry

    公开(公告)号:US10359377B2

    公开(公告)日:2019-07-23

    申请号:US15495634

    申请日:2017-04-24

    Abstract: Methods and systems for reducing the effect of finite source size on illumination beam spot size for Transmission, Small-Angle X-ray Scatterometry (T-SAXS) measurements are described herein. A beam shaping slit having a slender profile is located in close proximity to the specimen under measurement and does not interfere with wafer stage components over the full range of angles of beam incidence. In one embodiment, four independently actuated beam shaping slits are employed to effectively block a portion of an incoming x-ray beam and generate an output beam having a box shaped illumination cross-section. In one aspect, each of the beam shaping slits is located at a different distance from the specimen in a direction aligned with the beam axis. In another aspect, the beam shaping slits are configured to rotate about the beam axis in coordination with the orientation of the specimen.

    Automated Pattern Fidelity Measurement Plan Generation

    公开(公告)号:US20190204237A1

    公开(公告)日:2019-07-04

    申请号:US16296132

    申请日:2019-03-07

    Abstract: Methods and systems for determining parameter(s) of a metrology process to be performed on a specimen are provided. One system includes one or more computer subsystems configured for automatically generating regions of interest (Rats) to be measured during a metrology process performed for the specimen with the measurement subsystem based on a design for the specimen. The computer subsystem(s) are also configured for automatically determining parameter(s) of measurement(s) performed in first and second subsets of the ROIs during the metrology process with the measurement subsystem based on portions of the design for the specimen located in the first and second subsets of the ROIs, respectively. The parameter(s) of the measurement(s) performed in the first subset are determined separately and independently of the parameter(s) of the measurement(s) performed in the second subset.

    System and Method for Aligning Semiconductor Device Reference Images and Test Images

    公开(公告)号:US20190139208A1

    公开(公告)日:2019-05-09

    申请号:US15837582

    申请日:2017-12-11

    Abstract: A method may include, but is not limited to, receiving a plurality of reference images of a wafer. The method may include, but is not limited to, receiving the plurality of test images of the wafer. The method may include, but is not limited to, aligning the plurality of reference images and the plurality of test images via a coarse alignment process. The method may include, but is not limited to, aligning the plurality of reference images and the plurality of test images via a fine alignment process after alignment via the coarse alignment process. The fine alignment process may include measuring individual offsets and correcting individual offset data between at least one of the plurality of reference images and the plurality of test images.

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