公开(公告)号：US20050231122A1

公开(公告)日：2005-10-20

申请号：US11147317

申请日：2005-06-08

申请人： Mitsuaki Osame ,  Aya Anzai ,  Jun Koyama ,  Makoto Udagawa ,  Masahiko Hayakawa ,  Shunpei Yamazaki

发明人： Mitsuaki Osame ,  Aya Anzai ,  Jun Koyama ,  Makoto Udagawa ,  Masahiko Hayakawa ,  Shunpei Yamazaki

IPC分类号： G09G3/32 ,  H01L27/32 ,  G09G3/10 ,  G09G3/36

CPC分类号： H01L33/08 ,  G09G3/3233 ,  G09G2300/0426 ,  G09G2300/0842 ,  G09G2310/0254 ,  G09G2320/043 ,  H01L27/3211 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. A large holding capacitor Cs is not provided in the pixel portion but, instead, the channel length and the channel width of the driving TFTs are increased, and the channel capacitance is utilized as Cs. The channel length is selected to be very larger than the channel width to improve current characteristics in the saturated region, and a high VGS is applied to the driving TFTs to obtain a desired drain current. Therefore, the drain currents of the driving TFTs are little affected by the variation in the threshold voltage. In laying out the pixels, further, wiring is arranged under the partitioning wall and the driving TFTs are arranged under the wiring in order to avoid a decrease in the aperture ratio despite of an increase in the size of the driving TFT. In the case of the 3-transistor pixels, the switching TFT and the erasing TFT are linearly arranged to further increase the aperture ratio.

公开(公告)号：US20050161742A1

公开(公告)日：2005-07-28

申请号：US11087652

申请日：2005-03-24

申请人： Atsuo Isobe ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Shunpei Yamazaki ,  Mai Akiba

发明人： Atsuo Isobe ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Shunpei Yamazaki ,  Mai Akiba

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L27/01 ,  H01L31/0392

CPC分类号： H01L21/02683 ,  H01L21/2022 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78696

摘要： It is a problem to provide a semiconductor device production system using a laser crystallization method capable of preventing grain boundaries from forming in a TFT channel region and further preventing conspicuous lowering in TFT mobility due to grain boundaries, on-current decrease or off-current increase. An insulation film is formed on a substrate, and a semiconductor film is formed on the insulation film. Due to this, preferentially formed is a region in the semiconductor film to be concentratedly applied by stress during crystallization with laser light. Specifically, a stripe-formed or rectangular concavo-convex is formed on the semiconductor film. Continuous-oscillation laser light is irradiated along the striped concavo-convex or along a direction of a longer or shorter axis of rectangle.

公开(公告)号：US20050098784A1

公开(公告)日：2005-05-12

申请号：US11013539

申请日：2004-12-17

申请人： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

发明人： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L21/00 ,  H01L29/76

CPC分类号： H01L27/1222 ,  B23K26/0738 ,  H01L21/02354 ,  H01L21/02356 ,  H01L21/02675 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/32139 ,  H01L21/84 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78696 ,  Y10S118/90 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

摘要翻译： 提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流 。 在绝缘膜上形成矩形或条纹图案凹陷和突出部分。 绝缘膜上形成半导体膜。 通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。 尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

公开(公告)号：US20050056843A1

公开(公告)日：2005-03-17

申请号：US10857356

申请日：2004-06-01

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/28 ,  H01L21/322 ,  H01L21/324 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/49 ,  H01L29/786 ,  H01L29/10

CPC分类号： H01L29/66757 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L21/28158 ,  H01L21/3221 ,  H01L21/3226 ,  H01L29/04 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78675

摘要： Nickel is selectively held in contact with a particular region of an amorphous silicon film. Crystal growth parallel with a substrate is effected by performing a heat treatment. A thermal oxidation film is formed by performing a heat treatment in an oxidizing atmosphere containing a halogen element. During this step, the crystallinity is improved and the gettering of nickel elements proceeds. A thin-film transistor is formed so that the direction connecting source and drain regions coincides with the above crystal growth direction. As a result, a TFT having superior characteristics such as a mobility larger than 200 cm2/Vs and an S value smaller than 100 mV/dec. can be obtained.

摘要翻译： 镍选择性地保持与非晶硅膜的特定区域接触。 通过进行热处理来实现与基板平行的晶体生长。 通过在含有卤素元素的氧化气氛中进行热处理而形成热氧化膜。 在此步骤中，结晶度得到改善，并且镍元素的吸除进行。 形成薄膜晶体管，使得连接源极和漏极区域的方向与上述晶体生长方向一致。 结果，具有诸如迁移率大于200cm 2 / Vs和S值小于100mV / dec的优异特性的TFT。 可以获得。

公开(公告)号：US06858898B1

公开(公告)日：2005-02-22

申请号：US09532915

申请日：2000-03-22

申请人： Masahiko Hayakawa ,  Mitsunori Sakama ,  Satoshi Toriumi

发明人： Masahiko Hayakawa ,  Mitsunori Sakama ,  Satoshi Toriumi

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/77 ,  H01L27/01 ,  H01L27/12 ,  H01L29/786 ,  H01L31/0392

CPC分类号： H01L21/02686 ,  G02F1/1368 ,  H01L21/2026 ,  H01L21/3145 ,  H01L21/7624 ,  H01L27/12 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1237 ,  H01L27/1248 ,  H01L27/3248 ,  H01L27/3258 ,  H01L29/78603 ,  H01L29/78621

摘要： An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.

摘要翻译： 本发明的目的是防止TFT（薄膜晶体管）的劣化。 通过在TFT的半导体层和衬底之间形成氧化硅氮化物膜，可以防止通过BT测试的TFT的劣化，其中氧化硅氮化物膜的浓度为N与 Si的浓度。

公开(公告)号：US06838457B2

公开(公告)日：2005-01-04

申请号：US10459002

申请日：2003-06-10

申请人： Masahiko Hayakawa ,  Hiroyuki Kaizawa ,  Hiroyuki Moritomo ,  Ken-Ichi Kawaguchi ,  Tomonobu Koizumi ,  Mayumi Yamano ,  Koyo Matsuda ,  Minoru Okada ,  Mitsuaki Ohta

发明人： Masahiko Hayakawa ,  Hiroyuki Kaizawa ,  Hiroyuki Moritomo ,  Ken-Ichi Kawaguchi ,  Tomonobu Koizumi ,  Mayumi Yamano ,  Koyo Matsuda ,  Minoru Okada ,  Mitsuaki Ohta

IPC分类号： A61K31/00 ,  A61K31/517 ,  A61K31/519 ,  A61K31/5377 ,  C07D471/04 ,  C07D471/14 ,  C07D491/04 ,  C07D491/14 ,  C07D495/04 ,  C07D495/14 ,  C07D487/04 ,  A61K31/381

CPC分类号： C07D471/04 ,  A61K31/00 ,  A61K31/517 ,  A61K31/519 ,  A61K31/5377 ,  C07D471/14 ,  C07D491/04 ,  C07D491/14 ,  C07D495/04 ,  C07D495/14

摘要： The present invention provides a pharmaceutical composition which is useful as a phosphatidylinositol 3 kinase (PI3K) inhibitor and an antitumor agent, and it provides a novel bicyclic or tricyclic fused heteroaryl derivative or a salt thereof which possesses an excellent PI3K inhibiting activity and cancer cell growth inhibiting activity.

公开(公告)号：US06770641B2

公开(公告)日：2004-08-03

申请号：US10459220

申请日：2003-06-10

申请人： Masahiko Hayakawa ,  Hiroyuki Kaizawa ,  Hiroyuki Moritomo ,  Ken-Ichi Kawaguchi ,  Tomonobu Koizumi ,  Mayumi Yamano ,  Koyo Matsuda ,  Minoru Okada ,  Mitsuaki Ohta

发明人： Masahiko Hayakawa ,  Hiroyuki Kaizawa ,  Hiroyuki Moritomo ,  Ken-Ichi Kawaguchi ,  Tomonobu Koizumi ,  Mayumi Yamano ,  Koyo Matsuda ,  Minoru Okada ,  Mitsuaki Ohta

IPC分类号： C07D41304

CPC分类号： C07D471/04 ,  A61K31/00 ,  A61K31/517 ,  A61K31/519 ,  A61K31/5377 ,  C07D471/14 ,  C07D491/04 ,  C07D491/14 ,  C07D495/04 ,  C07D495/14

摘要： The present invention provides a pharmaceutical composition which is useful as a phosphatidylinositol 3 kinase (PI3K) inhibitor and an antitumor agent, and it provides a novel bicyclic or tricyclic fused heteroaryl derivative or a salt thereof which possesses an excellent PI3K inhibiting activity and cancer cell growth inhibiting activity.

公开(公告)号：US06653320B2

公开(公告)日：2003-11-25

申请号：US10087717

申请日：2002-03-01

申请人： Masahiko Hayakawa ,  Hiroyuki Kaizawa ,  Ken-Ichi Kawaguchi ,  Koyo Matsuda ,  Noriko Ishikawa ,  Tomonobu Koizumi ,  Mayumi Yamano ,  Minoru Okada ,  Mitsuaki Ohta

发明人： Masahiko Hayakawa ,  Hiroyuki Kaizawa ,  Ken-Ichi Kawaguchi ,  Koyo Matsuda ,  Noriko Ishikawa ,  Tomonobu Koizumi ,  Mayumi Yamano ,  Minoru Okada ,  Mitsuaki Ohta

IPC分类号： A61K31437

CPC分类号： C07D471/04 ,  A61K31/435 ,  C07D487/04

摘要： The present invention relates to novel compounds having a phosphatidylinositol 3 kinase (PI3K) inhibiting activity which are useful as medicaments, more particularly as antitumor agent. Novel 3-(imidazo[1,2-a]pyridin-3-yl) derivatives or salts thereof exhibit an excellent PI3K inhibiting activity and cancer cell growth inhibiting activity, and are thus useful as medicaments, especially as PI3K inhibitors and antitumor agents.

公开(公告)号：US06645826B2

公开(公告)日：2003-11-11

申请号：US10093313

申请日：2002-03-07

申请人： Shunpei Yamazaki ,  Taketomi Asami ,  Toru Takayama ,  Ritsuko Kawasaki ,  Hiroki Adachi ,  Naoya Sakamoto ,  Masahiko Hayakawa ,  Hiroshi Shibata ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Taketomi Asami ,  Toru Takayama ,  Ritsuko Kawasaki ,  Hiroki Adachi ,  Naoya Sakamoto ,  Masahiko Hayakawa ,  Hiroshi Shibata ,  Yasuyuki Arai

IPC分类号： H01L2126

CPC分类号： H01L29/7842 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78636 ,  H01L29/78645 ,  H01L2029/7863

摘要： In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of the crystalline semiconductor layer having tensile stress on a substrate, tensile stress is given to the first insulating layer formed to be in close contact with a surface of the semiconductor layer at a substrate side, and compressive stress is given to the second insulating layer formed to be in close contact with a surface of the semiconductor layer at a side opposite to the substrate side.

公开(公告)号：US06465287B1

公开(公告)日：2002-10-15

申请号：US08784292

申请日：1997-01-16

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame

IPC分类号： H01L2184

CPC分类号： H01L21/02672 ,  H01L21/2022 ,  H01L21/3226 ,  H01L27/12 ,  H01L27/1203 ,  H01L27/1277 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78675

摘要： Concentration of metal element which promotes crystallization of silicon and which exists within a crystalline silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is performed in temperature above 750° C. after introducing elemental nickel to an amorphous silicon film 103 disposed on a quartz substrate 101. Then, after obtaining the crystalline silicon film 105, it is patterned to obtain a pattern 106. Then, another heat treatment is performed within an oxidizing atmosphere at a temperature higher than that of the previous heat treatment. A thermal oxide film 107 is formed in this step. At this time, the elemental nickel is gettered to the thermal oxide film 107. Next, the thermal oxide film 107 is removed. Thereby, a crystalline silicon film 106 having low concentration of the metal element and a high crystallinity can be obtained.

摘要翻译： 通过利用金属元素获得的结晶硅膜中存在促进硅结晶的金属元素的浓度降低。 在将元素镍引入设置在石英衬底101上的非晶硅膜103之后，在750℃以上的温度下进行第一次结晶热处理。然后，在获得晶体硅膜105之后，对其进行图案化以获得图案106 然后，在比以前的热处理温度高的氧化气氛中进行另一热处理。 在该步骤中形成热氧化膜107。 此时，元素镍被吸收到热氧化膜107上。接下来，去除热氧化膜107。 由此，可以得到金属元素浓度低，结晶性高的结晶硅膜106。