公开(公告)号：US11326272B2

公开(公告)日：2022-05-10

申请号：US16727937

申请日：2019-12-27

申请人： GlobalWafers Co., Ltd.

发明人： Chun-Hung Chen ,  Hsing-Pang Wang ,  Wen-Ching Hsu ,  I-Ching Li

IPC分类号： C30B15/14 ,  C30B29/06 ,  C30B15/32

摘要： A mono-crystalline silicon growth apparatus includes a furnace, a support base, a crucible, a heating module disposed outside of the crucible, and a heat adjusting module above the crucible. The heat adjusting module includes a diversion tube, a plurality of heat preservation sheets, and a hard shaft. The diversion tube includes a tube body and a carrying body connected to the tube body. The heat preservation sheets are sleeved around the tube body and are stacked and disposed on the carrying body. The hard shaft passes through the tube body and does not rotate. The hard shaft includes a water flow channel disposed therein and a clamping portion configured to clamp a seed crystal. Therefore, a fluid injected into the water flow channel takes away the heat near the clamping portion. A heat adjusting module and a hard shaft of the mono-crystalline silicon growth apparatus are provided.

公开(公告)号：US11326271B2

公开(公告)日：2022-05-10

申请号：US16796522

申请日：2020-02-20

申请人： GlobalWafers Co., Ltd.

发明人： Richard Joseph Phillips ,  Salvador Zepeda ,  Patrick Fredrick Boegemann, III ,  William Luter

IPC分类号： C30B15/10 ,  C30B29/06 ,  C04B38/00 ,  C30B15/00 ,  C30B35/00 ,  B28B1/26 ,  C30B29/00 ,  C30B15/12 ,  B28B1/00 ,  B28B1/20 ,  C04B35/00

摘要： Methods for forming a unitized crucible assembly for holding a melt of silicon for forming a silicon ingot are disclosed. In some embodiments, the methods involve a porous crucible mold having a channel network with a bottom channel, an outer sidewall channel that extends from the bottom channel, and a central weir channel that extends from the bottom channel. A slip slurry may be added to the channel network and the liquid carrier of the slip slurry may be drawn into the mold. The resulting green body may be sintered to form the crucible assembly.

公开(公告)号：US20220139709A1

公开(公告)日：2022-05-05

申请号：US17089915

申请日：2020-11-05

申请人： International Business Machines Corporation

发明人： Ko-Tao Lee ,  Shawn Xiaofeng Du ,  Ning Li ,  Xin Zhang

IPC分类号： H01L21/02 ,  H01L21/306 ,  H01L29/66 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778 ,  C30B29/40 ,  C30B29/06 ,  C30B33/08 ,  C30B25/18 ,  C30B23/02

摘要： A method of manufacturing an electronic device is provided. The method includes forming a dielectric layer on a Si-based substrate, etching away portions of the dielectric layer to form a crisscrossing grid pattern of remaining portions of the dielectric layer and to expose the substrate in areas where the dielectric layer is removed, forming GaN-based layers on the substrate in growth areas between sidewalls of the remaining portions of the dielectric layer, and forming a semiconductor device on the GaN-based layers.

公开(公告)号：US11319643B2

公开(公告)日：2022-05-03

申请号：US16605636

申请日：2018-02-15

申请人： SUMCO CORPORATION

发明人： Takahiro Abe

IPC分类号： C30B15/10 ,  C30B29/06

摘要： Provided is a method for pulling up and growing, by the Czochralski method, a silicon monocrystal from a melt obtained by fusing a silicon raw material for crystals within a quartz crucible. When the inner wall of the quartz crucible is made of a synthetic quartz layer, a gel-like liquid including a devitrification accelerator, a thickening agent, and a solvent is applied to the bottom surface of the quartz crucible inner wall or to both the bottom surface and the lateral surface thereof prior to filling the silicon raw material for crystals into the quartz crucible, whereas when the inner wall of the quartz crucible is made of a natural quartz layer, the gel-like liquid is applied to both the bottom surface and the lateral surface of the inner wall of the quartz crucible prior to filling the silicon raw material for crystals into the quartz crucible.

公开(公告)号：US20220127749A1

公开(公告)日：2022-04-28

申请号：US17424098

申请日：2020-01-20

申请人： SK SILTRON CO., LTD.

发明人： Hyun Woo PARK

IPC分类号： C30B15/22 ,  C30B29/06 ,  G05B6/02

摘要： The present invention provides a single crystal ingot growth control device applied to a body process for growing the diameter of an ingot to a target diameter, and the single crystal ingot growth control device includes: an input unit that receives a diameter error (ΔD) that is a difference value between a measured diameter (D) of the ingot and a target diameter (D_T); a calculation unit that performs integral calculation on the diameter error (ΔD) received by the input unit in real time and calculates a final pulling speed (P/S_F) for each set time (t) that is increased stepwise by reflecting the diameter error integral value ∫ΔD), and an output unit that outputs the final pulling speed (P/S_F) calculated by the calculation unit to a pulling controller during the set time (t).

公开(公告)号：US11313049B2

公开(公告)日：2022-04-26

申请号：US15297853

申请日：2016-10-19

申请人： GlobalWafers Co., Ltd.

发明人： Soubir Basak ,  Gaurab Samanta ,  Parthiv Daggolu ,  Benjamin Michael Meyer ,  William L. Luter ,  Jae Woo Ryu ,  Eric Michael Gitlin

IPC分类号： C30B15/20 ,  C30B29/06 ,  C30B15/14

摘要： A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a crucible for containing the melt of material, a pulling mechanism configured to pull the ingot from the melt along a pull axis, and a multi-stage heat exchanger defining a central passage for receiving the ingot as the ingot is pulled by the pulling mechanism. The heat exchanger defines a plurality of cooling zones arranged vertically along the pull axis of the crystal pulling system. The plurality of cooling zones includes two enhanced-rate cooling zones and a reduced-rate cooling zone disposed vertically between the two enhanced-rate cooling zones.

公开(公告)号：US20220119940A1

公开(公告)日：2022-04-21

申请号：US17563199

申请日：2021-12-28

申请人： Gelest, Inc.

发明人： Barry C. ARKLES ,  Alain E. KALOYEROS

IPC分类号： C23C16/24 ,  C23C16/16 ,  C23C16/448 ,  C23C16/452 ,  C23C16/455 ,  C30B23/02 ,  C30B25/02 ,  C30B29/02 ,  C30B29/06 ,  H01L21/285

摘要： A method for deposition of a thin film onto a substrate is provided. The method includes providing a source precursor containing on or more of elements constituting the thin film, generating a transient species from the source precursor, and depositing a thin film onto the substrate from the transient species. The transient species being a reactive intermediate that has a limited lifetime in a condensed phase at or above room temperature.

公开(公告)号：US20220106704A1

公开(公告)日：2022-04-07

申请号：US17417496

申请日：2019-09-11

申请人： SUMCO CORPORATION

发明人： Kazuhiro NARAHARA ,  Masayuki TSUJI ,  Haku KOMORI

IPC分类号： C30B25/12 ,  C30B25/20 ,  C30B29/06 ,  C23C16/24 ,  C23C16/458

摘要： A vapor deposition apparatus includes a disc-shaped susceptor and a susceptor support member that supports and rotates the susceptor. The susceptor has a plurality of fitting grooves. The susceptor support member is provided with a plurality of support pins to be fitted in the respective plurality of fitting grooves. The fitting grooves each have an inclined portion that relatively moves the support pin with respect to the fitting groove in a circumferential direction of the susceptor with the support pin kept in contact by virtue of a self-weight of the susceptor and a positioning portion that positions the support pin relatively moved by the inclined portion at a specific position in the circumferential direction. The inclined portion and the positioning portion are formed continuously in a radial direction of the susceptor.

公开(公告)号：US20220090289A1

公开(公告)日：2022-03-24

申请号：US17500814

申请日：2021-10-13

申请人： GTAT Corporation

发明人： John T. Mac Donald

IPC分类号： C30B11/00 ,  C30B29/20 ,  C30B29/06 ,  C30B11/14

摘要： A method and apparatus for measuring a melt back of a seed in a boule are provided. The method includes lifting a boule once it has been produced using an actuating device onto a support table to automatically manipulate the boule from a furnace to the support table. The melt back of the seed is then automatically measured using a vision system that is installed on an imaging device disposed below the boule.

公开(公告)号：US20220064816A1

公开(公告)日：2022-03-03

申请号：US17396370

申请日：2021-08-06

申请人： GlobalWafers Co., Ltd.

发明人： Paolo Tosi ,  Matteo Pannocchia ,  Roberto Scala

IPC分类号： C30B15/10 ,  C30B15/14 ,  C30B29/06

摘要： Crystal pulling system having a housing and a crucible assembly are disclosed. The system includes a heat shield that defines a central passage through which an ingot passes during ingot growth. A cover member is moveable within the heat shield along a pull axis. The cover member may include an insulation layer. The cover member covers at least a portion of the charge during meltdown.