公开(公告)号：US11723225B2

公开(公告)日：2023-08-08

申请号：US18066675

申请日：2022-12-15

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： Takeyoshi Tokuhara ,  Sanshiro Shishido ,  Yasuo Miyake ,  Shinichi Machida

IPC分类号： H10K39/32 ,  H01L27/146

CPC分类号： H10K39/32 ,  H01L27/146 ,  H01L27/14669

摘要： An imaging device including a semiconductor substrate including a first surface that receives light from outside, and a second surface opposite to the first surface; a first transistor located on the second surface; and a photoelectric converter that faces the second surface and that receives light transmitted through the semiconductor substrate. The semiconductor substrate is a silicon substrate or a silicon compound substrate, and the photoelectric converter includes a first electrode electrically connected to the first transistor, a second electrode, and a photoelectric conversion layer that is located between the first electrode and the second electrode and that contains a material which absorbs light having a first wavelength longer than or equal to 1.1 μm, and the material has a quantum nanostructure.

公开(公告)号：US11715323B2

公开(公告)日：2023-08-01

申请号：US17715962

申请日：2022-04-08

申请人： Au Optronics Corporation

发明人： Shih-Hua Lu ,  Chao-Chien Chiu

IPC分类号： G06F3/042 ,  G06V40/13 ,  G02F1/1333 ,  G02F1/1335 ,  H01L27/146 ,  H10K39/32

CPC分类号： G06V40/1318 ,  G02F1/13338 ,  G02F1/133512 ,  G02F1/133526 ,  G06F3/042 ,  G06V40/1324 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14678 ,  H10K39/32 ,  G02F2201/56

摘要： A fingerprint sensing device includes a first substrate, a sensing element layer, a second substrate, a micro-structure layer, and a spacer layer. The sensing element layer is located on the first substrate and includes multiple sensing elements. The second substrate is located on the sensing element layer. The micro-structure layer is located between the second substrate and the sensing element layer, and includes multiple micro-lens structures and multiple dummy structures. Orthogonal projections of the micro-lens structures on the first substrate overlap orthogonal projections of the sensing elements on the first substrate. The spacer layer is located between the second substrate and the sensing element layer, and includes multiple main spacers. Each of the main spacers covers at least one of the dummy structures.

公开(公告)号：US11711930B2

公开(公告)日：2023-07-25

申请号：US17306116

申请日：2021-05-03

申请人： Samsung Electronics Co., Ltd.

发明人： Kyung Bae Park ,  Takkyun Ro ,  Kiyohiko Tsutsumi ,  Chul Joon Heo ,  Yong Wan Jin

IPC分类号： H01L27/146 ,  H10K30/10 ,  H10K39/32 ,  H10K30/81 ,  H10K85/20 ,  H10K85/60 ,  H10K30/30 ,  H10K30/57 ,  H10K102/10

CPC分类号： H10K30/10 ,  H01L27/14647 ,  H01L27/14665 ,  H10K30/81 ,  H10K39/32 ,  H10K85/211 ,  H10K85/636 ,  H10K85/657 ,  H01L27/14621 ,  H10K30/30 ,  H10K30/57 ,  H10K85/633 ,  H10K85/652 ,  H10K85/6572 ,  H10K85/6576 ,  H10K2102/103

摘要： A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (λmax1) of the first photoelectric conversion layer and a peak absorption wavelength (λmax2) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.

公开(公告)号：US11700733B2

公开(公告)日：2023-07-11

申请号：US17338373

申请日：2021-06-03

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： Yuta Hasegawa ,  Nobuyuki Matsuzawa ,  Yoshiaki Obana ,  Ichiro Takemura ,  Norikazu Nakayama ,  Masami Shimokawa ,  Tetsuji Yamaguchi ,  Iwao Yagi ,  Hideaki Mogi

IPC分类号： H10K39/32 ,  H01L27/146 ,  H01L31/10 ,  H10K19/20 ,  H10K30/30 ,  H10K71/16 ,  H10K85/60 ,  H10K85/20 ,  H10K85/30

CPC分类号： H10K39/32 ,  H01L27/146 ,  H01L31/10 ,  H10K19/20 ,  H10K30/353 ,  H10K71/164 ,  H10K85/631 ,  H01L27/14647 ,  H01L27/14689 ,  H10K30/30 ,  H10K85/211 ,  H10K85/215 ,  H10K85/322 ,  H10K85/622 ,  H10K85/626 ,  H10K85/633 ,  H10K85/6572 ,  H10K85/6576 ,  Y02E10/549

摘要： A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.

公开(公告)号：US20230207598A1

公开(公告)日：2023-06-29

申请号：US17928862

申请日：2021-05-28

申请人： SONY GROUP CORPORATION ,  SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： Osamu ENOKI ,  Masato KANNO ,  Chiaki TAKAHASHI ,  Chika SUGIMURA ,  Yosuke SAITO

IPC分类号： H01L27/146 ,  H10K30/81 ,  H10K39/32 ,  H10K30/10

CPC分类号： H01L27/14634 ,  H01L27/14636 ,  H01L27/14603 ,  H01L27/14612 ,  H10K30/81 ,  H10K39/32 ,  H10K30/10

摘要： A photoelectric converter includes: a first electrode; a second electrode; a first photoelectric conversion layer; a second photoelectric conversion layer; a first buffer layer; and a second buffer layer. The second electrode is disposed to be opposed to the first electrode. The first photoelectric conversion layer is provided between the first electrode and the second electrode. The first photoelectric conversion layer includes a first dye material and a first carrier transport material. The second photoelectric conversion layer is stacked on the second electrode side of the first photoelectric conversion layer between the first electrode and the second electrode. The second photoelectric conversion layer includes a second dye material and a second carrier transport material. The second dye material has a light absorption waveform different from a light absorption waveform of the first dye material. The first buffer layer has a first electrical conduction type. The first buffer layer is provided between the first electrode and the first photoelectric conversion layer. The second buffer layer has a second electrical conduction type different from the first electrical conduction type. The second buffer layer is provided between the second electrode and the second photoelectric conversion layer.

公开(公告)号：US11690293B2

公开(公告)日：2023-06-27

申请号：US16645038

申请日：2018-08-17

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： Yuki Negishi ,  Osamu Enoki ,  Yuta Hasegawa

IPC分类号： H01L51/00 ,  H10K85/60 ,  H10K19/20 ,  H10K30/30 ,  H10K39/32 ,  H10K85/20 ,  H10K85/30 ,  H01L27/146

CPC分类号： H10K85/6576 ,  H10K19/20 ,  H10K30/30 ,  H10K39/32 ,  H10K85/211 ,  H10K85/215 ,  H10K85/311 ,  H10K85/654 ,  H10K85/655 ,  H01L27/14647

摘要： A photoelectric conversion element of the present disclosure includes a first electrode, a second electrode disposed to be opposed to the first electrode, and an organic photoelectric conversion layer provided between the first electrode and the second electrode and including at least one of a Chryseno[1,2-b:8,7-b′]dithiophene (ChDT1) derivative represented by the general formula (1) or a Chryseno[1,2-b:7,8-b′]dithiophene (ChDT2) derivative represented by the general formula (2).

公开(公告)号：US11670109B2

公开(公告)日：2023-06-06

申请号：US17738999

申请日：2022-05-06

申请人： LARGAN PRECISION CO., LTD.

发明人： Chun-Che Hsueh ,  Hsiang-Chi Tang ,  Tsung-Han Tsai ,  Fuh-Shyang Yang

IPC分类号： G06V40/13 ,  G06F3/042

CPC分类号： G06V40/1318 ,  G06F3/0421 ,  H10K39/32

摘要： An optical fingerprint identification system includes a cover, a light emitting layer, an optical layer, an image sensor and a base that are sequentially disposed from top to bottom. The cover has a fingerprint contact surface on top. The image sensor has an image surface. The optical layer includes a first array layer and a second array layer, and the first array layer is stacked on top of the second array layer. The first array layer and the second array layer respectively include a plurality of first array lens elements and a plurality of second array lens elements respectively arranged at equal intervals in a first direction. Each of the first array lens elements and a corresponding second array lens element of the second array layer are coaxial along an optical axis and form an imaging unit.

公开(公告)号：US20230165019A1

公开(公告)日：2023-05-25

申请号：US18101183

申请日：2023-01-25

申请人： Japan Display Inc. ,  The University of Tokyo

发明人： Kento HIMOTO ,  Takashi NAKAMURA ,  Takao SOMEYA ,  Tomoyuki YOKOTA

IPC分类号： H10K39/32

CPC分类号： H10K39/32

摘要： A detection device is a detection device including a plurality of optical sensors arranged on a substrate. In each of the optical sensors, a lower electrode, an electron transport layer, an active layer, a hole transport layer, and an upper electrode are stacked in a direction orthogonal to a surface of the substrate in the order as listed. The active layer contains an organic semiconductor. The hole transport layer includes a metal oxide layer and is provided on the active layer so as to be in contact therewith.

公开(公告)号：US11659299B2

公开(公告)日：2023-05-23

申请号：US17549035

申请日：2021-12-13

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： Shinichi Machida ,  Takeyoshi Tokuhara ,  Manabu Nakata ,  Sanshiro Shishido ,  Masaaki Yanagida ,  Masumi Izuchi

IPC分类号： H04N5/378 ,  H04N25/75 ,  H04N25/76 ,  H04N5/374

CPC分类号： H04N25/75 ,  H04N25/76 ,  H10K30/211 ,  H10K39/32 ,  H10K85/211 ,  Y02E10/549

摘要： An imaging apparatus includes a unit pixel including a pixel electrode, a charge accumulation region electrically connected to the pixel electrode, and a signal detection circuit electrically connected to the charge accumulation region; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the electrodes; and a voltage supply circuit configured to selectively apply any one of first, second, and third voltages between the electrodes. The photoelectric conversion layer exhibits first and second wavelength sensitivity characteristics in a wavelength range when the voltage supply circuit applies the first and second voltages between the electrodes, respectively, and becomes insensitive to light in the wavelength range when the voltage supply circuit applies the third voltage between the electrodes.

公开(公告)号：US11647641B2

公开(公告)日：2023-05-09

申请号：US17113095

申请日：2020-12-06

申请人： IMEC VZW

发明人： Jiwon Lee ,  Pierre Boulenc ,  Kris Myny

IPC分类号： H10K39/32 ,  H01L27/146 ,  H04N25/50 ,  H04N25/79 ,  H10K19/20 ,  H10K30/15

CPC分类号： H10K39/32 ,  H01L27/14614 ,  H04N25/50 ,  H04N25/79 ,  H01L27/14641 ,  H01L27/14649 ,  H10K19/20 ,  H10K30/152

摘要： A photo-sensitive device comprises: an active layer configured to generate charges in response to incident light; a charge transport layer arranged below the active layer, wherein the charge transport layer comprises a first portion and a second portion being laterally displaced in relation to the first portion; a gate separated by a dielectric material from the charge transport layer, wherein said gate is arranged below the first portion and configured to control a potential thereof; and a transfer gate, which is separated by a dielectric material from a transfer portion of the charge transport layer between the first portion and the second portion, wherein the transfer gate is configured to control transfer of accumulated charges in the first portion to the second portion for read-out of detected light.