公开(公告)号：US20140162437A1

公开(公告)日：2014-06-12

申请号：US14056664

申请日：2013-10-17

申请人： SEOUL VIOSYS CO., LTD.

发明人： Seung Kyu CHOI ,  Woo Chul KWAK ,  Chae Hon KIM ,  Jung Whan JUNG

IPC分类号： H01L21/02

CPC分类号： H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262

摘要： Exemplary embodiments of the present invention relate to a method of growing gallium nitride-based semiconductor layers through metal-organic chemical vapor deposition, including disposing a substrate in a chamber, growing a first conductivity-type gallium nitride-based semiconductor layer on the substrate at a first chamber pressure, growing a gallium nitride-based active layer on the first conductivity-type gallium nitride-based semiconductor layer at a second chamber pressure higher than the first chamber pressure, and growing a second conductivity-type gallium nitride-based semiconductor layer on the active layer at a third chamber pressure lower than the second chamber pressure.

摘要翻译： 本发明的示例性实施例涉及通过金属有机化学气相沉积来生长氮化镓基半导体层的方法，包括在衬底中设置衬底，在衬底上生长第一导电型氮化镓基半导体层， 第一室压力，在高于第一室压力的第二室压力下在第一导电型氮化镓基半导体层上生长氮化镓基有源层，以及生长第二导电型氮化镓基半导体层 在低于第二室压力的第三室压力下在有源层上。

公开(公告)号：US20140145314A1

公开(公告)日：2014-05-29

申请号：US13816164

申请日：2012-12-18

申请人： JING Wang ,  Renrong Liang ,  Lei Guo ,  Jun Xu

发明人： JING Wang ,  Renrong Liang ,  Lei Guo ,  Jun Xu

IPC分类号： H01L29/04

CPC分类号： H01L29/04 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/0276 ,  H01L21/28255 ,  H01L21/823807 ,  H01L29/06 ,  H01L29/1054 ,  H01L29/161 ,  H01L29/24 ,  H01L29/517 ,  H01L29/78

摘要： A semiconductor structure with beryllium oxide is provided. The semiconductor structure comprises: a semiconductor substrate (100); and a plurality of insulation oxide layers (201, 202 . . . 20x) and a plurality of single crystal semiconductor layers (301, 302 . . . 30x) alternately stacked on the semiconductor substrate (100). A material of the insulation oxide layer (201) contacted with the semiconductor substrate (100) is any one of beryllium oxide, SiO2, SiOxNy and a combination thereof, a material of other insulation oxide layers (202 . . . 20x) is single crystal beryllium oxide.

摘要翻译： 提供了具有氧化铍的半导体结构。 半导体结构包括：半导体衬底（100）; 以及交替层叠在半导体基板（100）上的多个绝缘氧化物层（201,202,20.0x）和多个单晶半导体层（301,302,30 ...）。 与半导体衬底（100）接触的绝缘氧化物层（201）的材料是氧化铍，SiO 2，SiO x N y及其组合中的任一种，其它绝缘氧化物层（202.20x）的材料是单晶 氧化铍。

公开(公告)号：US20140138703A1

公开(公告)日：2014-05-22

申请号：US14126047

申请日：2012-05-15

申请人： Adrian Stefan Avramescu ,  Ines Pietzonka ,  Dimitri Dini

发明人： Adrian Stefan Avramescu ,  Ines Pietzonka ,  Dimitri Dini

IPC分类号： H01S5/22 ,  H01L29/20 ,  H01L21/02 ,  H01L29/205

CPC分类号： H01S5/22 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02609 ,  H01L21/02647 ,  H01L29/2003 ,  H01L29/205

摘要： An optoelectronic semiconductor body has a substrate that includes a strained layer that is applied to the substrate in a first epitaxy step. The strained layer includes at least one recess formed vertically in the strained layer. In a second epitaxy step, a further layer applied to the strained layer. The further layer fills the at least one recess and covers the strained layer at least in some areas.

摘要翻译： 光电半导体本体具有包括在第一外延步骤中施加到衬底的应变层的衬底。 应变层包括在应变层中垂直形成的至少一个凹部。 在第二外延步骤中，施加到应变层的另一层。 另外的层填充至少一个凹部并且至少在一些区域中覆盖应变层。

公开(公告)号：US08692287B2

公开(公告)日：2014-04-08

申请号：US13222200

申请日：2011-08-31

申请人： Tomonari Shioda ,  Hung Hung ,  Jongil Hwang ,  Taisuke Sato ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Tomonari Shioda ,  Hung Hung ,  Jongil Hwang ,  Taisuke Sato ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02584 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/12

摘要： According to one embodiment, a nitride semiconductor device includes: a stacked foundation layer, and a functional layer. The stacked foundation layer is formed on an AlN buffer layer formed on a silicon substrate. The stacked foundation layer includes AlN foundation layers and GaN foundation layers being alternately stacked. The functional layer includes a low-concentration part, and a high-concentration part provided on the low-concentration part. A substrate-side GaN foundation layer closest to the silicon substrate among the plurality of GaN foundation layers includes first and second portions, and a third portion provided between the first and second portions. The third portion has a Si concentration not less than 5×1018 cm−3 and has a thickness smaller than a sum of those of the first and second portions.

摘要翻译： 根据一个实施例，氮化物半导体器件包括：堆叠的基底层和功能层。 堆叠的基底层形成在形成在硅衬底上的AlN缓冲层上。 堆叠的基础层包括AlN基底层和GaN基底层交替堆叠。 功能层包括低浓度部分和设置在低浓度部分上的高浓度部分。 多个GaN基底层中最靠近硅衬底的衬底侧GaN基底层包括第一和第二部分，以及设置在第一和第二部分之间的第三部分。 第三部分的Si浓度不小于5×1018cm-3，其厚度小于第一和第二部分的总和。

公开(公告)号：US08686396B2

公开(公告)日：2014-04-01

申请号：US12599349

申请日：2008-05-08

申请人： Asif Khan

发明人： Asif Khan

IPC分类号： H01L29/06 ,  H01L31/00

CPC分类号： H01L33/12 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/16 ,  H01L33/32

摘要： An ultra-violet light-emitting device and method for fabricating an ultraviolet light emitting device, 12, (LED or an LD) with an AlInGaN multiple-quantum-well active region, 10, exhibiting stable cw-powers. The device includes a non c-plane template with an ultraviolet light-emitting structure thereon. The template includes a first buffer layer, 321, on a substrate, 100, then a second buffer layer, 421, on the first preferably with a strain-relieving layer, 302, in both buffer layers. Next there is a semiconductor layer having a first type of conductivity, 500, followed by a layer providing a quantum-well region, 600. Another semiconductor layer, 700, having a second type of conductivity is applied next. Two metal contacts, 980 and 990, are applied to this construction, one to the semiconductor layer having the first type of conductivity and the other to the semiconductor layer having the second type of conductivity, to complete the light emitting device.

摘要翻译： 一种紫外线发光装置及其制造方法，其特征在于，制造具有稳定的cw功率的具有AlInGaN多量子阱有源区域10的紫外发光元件12（LED或LD）。 该装置包括其上具有紫外发光结构的非c面模板。 该模板在两个缓冲层中包括在衬底上的第一缓冲层321，第一缓冲层321，第二缓冲层421，优选地具有应变消除层302。 接下来，具有第一导电类型的半导体层500，接着是提供量子阱区域的层600.接下来应用具有第二类导电性的另一半导体层700。 两个金属触点980和990被应用于这种结构，一个到具有第一类型导电性的半导体层，另一个连接到具有第二导电类型的半导体层，以完成发光器件。

公开(公告)号：US20140054593A1

公开(公告)日：2014-02-27

申请号：US13591232

申请日：2012-08-22

申请人： Chen-Zi Liao ,  Chih-Wei Hu ,  Yen-Hsiang Fang ,  Rong Xuan

发明人： Chen-Zi Liao ,  Chih-Wei Hu ,  Yen-Hsiang Fang ,  Rong Xuan

IPC分类号： H01L29/205

CPC分类号： H01L33/32 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L29/155 ,  H01L33/02 ,  H01L33/16

摘要： A nitride semiconductor structure is provided. The nitride semiconductor structure at least includes a silicon substrate, a AlN layer, a AlGaN layer and a GaN layer formed on the AlGaN layer. The silicon substrate has a surface tilted at 0

摘要翻译： 提供氮化物半导体结构。 氮化物半导体结构至少包括在AlGaN层上形成的硅衬底，AlN层，AlGaN层和GaN层。 硅衬底具有相对于垂直于（111）晶面的轴线倾斜0°<θ0.5°的表面，并且在表面上形成AlN层。 AlN层形成在AlN层上。 此外，AlGaN层中的Al含量在从硅衬底侧朝向GaN层侧的层厚度方向上逐渐减小。

公开(公告)号：US08633468B2

公开(公告)日：2014-01-21

申请号：US13370470

申请日：2012-02-10

申请人： Remigijus Gaska ,  Jinwei Yang ,  Michael Shur

发明人： Remigijus Gaska ,  Jinwei Yang ,  Michael Shur

IPC分类号： H01L29/06

CPC分类号： H01L33/04 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/025 ,  H01L33/12 ,  H01S2301/173

摘要： A solution for reducing a number of dislocations in an active region of an emitting device is provided. A dislocation bending structure can be included in the emitting device between the substrate and the active region. The dislocation bending structure can be configured to cause dislocations to bend and/or annihilate prior to reaching the active region, e.g., due to the presence of a sufficient amount of strain. The dislocation bending structure can include a plurality of layers with adjacent layers being composed of a material, but with molar fractions of an element in the respective material differing between the two layers. The dislocation bending structure can include at least forty pairs of adjacent layers having molar fractions of an element differing by at least five percent between the adjacent layers.

摘要翻译： 提供了用于减少发射装置的有源区域中的多个位错的解决方案。 位错弯曲结构可以包括在衬底和有源区域之间的发射器件中。 位错弯曲结构可以被配置为在到达活性区域之前导致位错弯曲和/或湮灭，例如由于存在足够量的应变。 位错弯曲结构可以包括多个层，其中相邻层由材料组成，但是相应材料中的元素的摩尔分数在两层之间不同。 位错弯曲结构可以包括至少四十对相邻层之间相邻层之间具有至少百分之五的摩尔分数的相邻层。

公开(公告)号：US20140008614A1

公开(公告)日：2014-01-09

申请号：US14007435

申请日：2012-04-04

申请人： Kei Fujii ,  Takashi Ishizuka ,  Katsushi Akita

发明人： Kei Fujii ,  Takashi Ishizuka ,  Katsushi Akita

IPC分类号： H01L31/0352

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/0262 ,  H01L31/109 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： Provided is, for example, a photodiode in which extension of the sensitivity range to a longer wavelength in the near-infrared region can be achieved without increasing the dark current. A photodiode according to the present invention includes an absorption layer 3 that is positioned on an InP substrate 1 and has a type-II multiple-quantum well structure in which an InGaAs layer 3a and a GaAsSb layer 3b are alternately layered, wherein the InGaAs layer or the GaAsSb layer has a composition gradient in the thickness direction in which the bandgap energy of the InGaAs or the GaAsSb decreases toward the top surface or the bottom surface of the layer.

摘要翻译： 例如，提供了可以在不增加暗电流的情况下实现在近红外区域中的灵敏度范围延长到更长波长的光电二极管。 根据本发明的光电二极管包括位于InP衬底1上并具有InGaAs层3a和GaAsSb层3b交替层叠的II型多量子阱结构的吸收层3，其中InGaAs层 或者GaAsSb层在厚度方向上具有InGaAs或GaAsSb的带隙能量朝向层的顶表面或底表面减小的组成梯度。

公开(公告)号：US20130334495A1

公开(公告)日：2013-12-19

申请号：US13837992

申请日：2013-03-15

申请人： Dae-ho LIM ,  Joo-sung KIM ,  Jae-kyun KIM ,  Young-jo TAK

发明人： Dae-ho LIM ,  Joo-sung KIM ,  Jae-kyun KIM ,  Young-jo TAK

IPC分类号： H01L29/12 ,  H01L21/02

CPC分类号： H01L29/122 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/155 ,  H01L29/2003

摘要： A superlattice structure, and a semiconductor device including the same, include a plurality of pairs of layers are in a pattern repeated at least two times, in which a first layer and a second layer constitute a pair, the first layer is formed of AlxInyGa1-x-yN (where 0≦x and y≦1), the second layer is formed of AlaInbGa1-a-bN (where 0≦a, b≦1 and x≠a), the first and second layers have the same thickness, and a total thickness of each of the plurality of pairs of layers is different than each other.

摘要翻译： 超晶格结构以及包括该超晶格结构的半导体器件包括多层重叠至少两次的图案，其中第一层和第二层构成一对，第一层由Al x In y Ga 1- x-yN（其中0 @ x和y @ 1），第二层由AlaInbGa1-a-bN（其中0 @ a，b @ 1和x

公开(公告)号：US20130316518A1

公开(公告)日：2013-11-28

申请号：US13478999

申请日：2012-05-23

申请人： Alice HOLLISTER ,  Sirish REDDY ,  Keith FOX ,  Mandyam SRIRAM ,  Joe WOMACK

发明人： Alice HOLLISTER ,  Sirish REDDY ,  Keith FOX ,  Mandyam SRIRAM ,  Joe WOMACK

IPC分类号： H01L21/20

CPC分类号： H01L21/0245 ,  H01L21/02488 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/0332 ,  H01L21/0337 ,  H01L27/11556 ,  H01L27/11582

摘要： Smooth silicon films having low compressive stress and smooth tensile silicon films are deposited by plasma enhanced chemical vapor deposition (PECVD) using a process gas comprising a silicon-containing precursor (e.g., silane), argon, and a second gas, such as helium, hydrogen, or a combination of helium and hydrogen. Doped smooth silicon films and smooth silicon germanium films can be obtained by adding a source of dopant or a germanium-containing precursor to the process gas. In some embodiments dual frequency plasma comprising high frequency (HF) and low frequency (LF) components is used during deposition, resulting in improved film roughness. The films are characterized by roughness (Ra) of less than about 7 Å, such as less than about 5 Å as measured by atomic force microscopy (AFM), and a compressive stress of less than about 500 MPa in absolute value. In some embodiments smooth tensile silicon films are obtained.