公开(公告)号：US20190194797A1

公开(公告)日：2019-06-27

申请号：US16329569

申请日：2017-08-31

申请人： Nanyang Technological University

发明人： Xuechao YU ,  Peng YU ,  Qijie WANG ,  Zheng LIU

IPC分类号： C23C14/22 ,  C23C14/00 ,  C23C14/06 ,  C30B29/46 ,  C30B33/06 ,  H01L31/0272

CPC分类号： C23C14/228 ,  C23C14/0005 ,  C23C14/0623 ,  C23C14/0629 ,  C30B29/46 ,  C30B33/06 ,  H01L31/0272 ,  H01L31/032

摘要： A chalcogenide film is provided. The chalcogenide film includes a noble metal chalcogenide material having a formula MCx. M represents a noble metal. C represents a chalcogen. x is any one positive value equal to or more than 1.4 and less than 2. The chalcogenide film is configured to generate electrons and holes upon light incident on the chalcogenide film.

公开(公告)号：US20170190858A1

公开(公告)日：2017-07-06

申请号：US15403799

申请日：2017-01-11

申请人： TORAY INDUSTRIES, INC.

发明人： Yusuke Tsukamura ,  Hiroyuki Uebayashi ,  Minoru Yoshida ,  Motoyuki Suzuki

IPC分类号： C08J7/04 ,  C23C16/40 ,  B65D65/40 ,  C23C14/08 ,  C23C14/34 ,  C23C14/06 ,  C23C16/50 ,  C23C14/10

CPC分类号： C08J7/045 ,  B65D65/40 ,  C08F220/14 ,  C08F230/08 ,  C08F259/08 ,  C08F265/06 ,  C08F290/068 ,  C08J2367/02 ,  C08J2433/00 ,  C08J2433/10 ,  C08J2433/12 ,  C08J2433/16 ,  C08J2443/04 ,  C08L33/066 ,  C23C14/0629 ,  C23C14/081 ,  C23C14/086 ,  C23C14/10 ,  C23C14/3457 ,  C23C16/40 ,  C23C16/50 ,  C08F220/20 ,  C08F220/06 ,  C08F2220/1875 ,  C08F220/18

摘要： A gas barrier film including a polymer base, an undercoat layer that contains, as the main component, an acrylic resin having at least one side chain selected from the group consisting of the side chains (I) to (III) mentioned below, and an inorganic layer, wherein the undercoat layer and the inorganic layer are arranged in this order on at least one surface of the polymer base in such a manner that the undercoat layer and the inorganic layer are in contact with each other: (I) a side chain having an acrylic polymer skeleton; (II) a side chain having a dimethylsiloxane skeleton; and (III) a side chain having a skeleton containing a fluorine atom.

公开(公告)号：US09431569B2

公开(公告)日：2016-08-30

申请号：US14141408

申请日：2013-12-26

申请人： First Solar, Inc.

发明人： Sergey Barabash ,  Amir Bayati ,  Dipankar Pramanik ,  Zhi-Wen Sun

IPC分类号： C01B19/00 ,  H01L35/16 ,  H01L31/18

CPC分类号： H01L31/1832 ,  C23C14/0629 ,  C23C16/305 ,  H01L21/02411 ,  H01L21/02422 ,  H01L21/0248 ,  H01L21/02485 ,  H01L21/02499 ,  H01L21/02505 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02631 ,  H01L31/02966 ,  H01L31/0749 ,  H01L31/18 ,  H01L31/1836 ,  Y02E10/541 ,  Y02P70/521

摘要： Embodiments provided herein describe methods for forming cadmium-manganese-telluride (CMT), such as for use in photovoltaic devices. A substrate including a material with a zinc blend crystalline structure is provided. CMT is formed above the substrate. During the formation of the CMT, cation-rich processing conditions are maintained. The resulting CMT may be more readily provided with p-type dopants when compared to conventionally-formed CMT.

摘要翻译： 本文提供的实施方案描述了形成碲化锰 - 碲化物（CMT）的方法，例如用于光伏器件中的方法。 提供了包含具有锌掺杂晶体结构的材料的衬底。 CMT形成在衬底之上。 在CMT的形成过程中，维持富阳离子处理条件。 当与常规形成的CMT相比时，所得到的CMT可以更容易地被提供有p型掺杂剂。

公开(公告)号：US20160240723A1

公开(公告)日：2016-08-18

申请号：US15137307

申请日：2016-04-25

申请人： International Business Machines Corporation

发明人： Sunit S. Mahajan ,  Teodor K. Todorov

IPC分类号： H01L31/18 ,  C23C16/448 ,  C23C16/30 ,  H01L31/032

CPC分类号： H01L31/18 ,  C23C14/0629 ,  C23C14/24 ,  C23C16/455 ,  C23C16/46 ,  C23C16/52 ,  H01L31/0322 ,  H01L31/0324 ,  H01L31/0326 ,  Y02E10/541 ,  Y02P70/521

摘要： Techniques for precisely controlling the composition of volatile components (such as sulfur (S), selenium (Se), and tin (Sn)) of chalcogenide semiconductors in real-time—during production of the material are provided. In one aspect, a method for forming a chalcogenide semiconductor material includes providing a S source(s) and a Se source(s); heating the S source(s) to form a S-containing vapor; heating the Se source(s) to form a Se-containing vapor; passing a carrier gas first through the S-containing vapor and then through the Se-containing vapor, wherein the S-containing vapor and the Se-containing vapor are transported via the carrier gas to a sample; and contacting the S-containing vapor and the Se-containing vapor with the sample under conditions sufficient to form the chalcogenide semiconductor material. A multi-chamber processing apparatus is also provided.

公开(公告)号：US20160149069A1

公开(公告)日：2016-05-26

申请号：US14948813

申请日：2015-11-23

申请人： Dow Global Technologies LLC

发明人： Todd R. Bryden ,  Jeffrey L. Fenton, JR. ,  Gary E. Mitchell ,  Kirk R. Thompson ,  Michael E. Mills ,  David J. Parrillo

IPC分类号： H01L31/0749 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/0392

CPC分类号： H01L31/18 ,  C23C14/0629 ,  C23C14/3414 ,  H01L21/0237 ,  H01L21/02425 ,  H01L21/02485 ,  H01L21/02557 ,  H01L21/02631 ,  H01L31/022466 ,  H01L31/0322 ,  H01L31/03928 ,  H01L31/0749 ,  H01L31/1884 ,  Y02E10/541 ,  Y02P70/521

摘要： The invention is a method of forming a cadmium sulfide based buffer on a copper chalcogenide based absorber in making a photovoltaic cell. The buffer is sputtered at relatively high pressures. The resulting cell has good efficiency and according to one embodiment is characterized by a narrow interface between the absorber and buffer layers. The buffer is further characterized according to a second embodiment by a relatively high oxygen content.

摘要翻译： 本发明是一种在制造光伏电池的同时在铜硫属元素化物系吸收体上形成硫化镉基缓冲剂的方法。 缓冲液在相对高的压力下溅射。 所得到的电池具有良好的效率，并且根据一个实施例的特征在于吸收体和缓冲层之间的窄界面。 根据第二实施方案，缓冲剂通过相对高的氧含量被进一步表征。

公开(公告)号：US09340871B1

公开(公告)日：2016-05-17

申请号：US14872266

申请日：2015-10-01

申请人： Rohm and Haas Company

发明人： Jitendra Goela ,  Nathaniel Brese

IPC分类号： C23C16/30 ,  G02B1/10

CPC分类号： G02B1/14 ,  C01G9/08 ,  C04B35/547 ,  C04B35/6455 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/72 ,  C04B2235/9653 ,  C23C14/0629 ,  C23C14/357 ,  C23C16/306 ,  G02B1/02 ,  G02B1/10

摘要： Low scatter water clear zinc sulfide with reduced metal contamination is prepared by coating a chuck which holds zinc sulfide and machining the zinc sulfide with uncoated particles. An inert foil is cleaned with an acid cleaning method and also cleaning the zinc sulfide. The zinc sulfide is wrapped in the inert foil and then treated by a HIP process to provide a low scatter water-clear zinc sulfide. The low scatter water-clear zinc sulfide may be used in articles such as windows and domes.

摘要翻译： 通过涂覆保持硫化锌并用未涂覆的颗粒加工硫化锌的卡盘来制备具有减少的金属污染物的低散射水分透明的硫化锌。 用酸性清洁方法清洁惰性箔，并清洗硫化锌。 将硫化锌包裹在惰性箔中，然后通过HIP法处理，以提供低散射的水清净硫化锌。 低散射水清净硫化锌可用于窗户和圆顶等物品中。

公开(公告)号：US20160093762A1

公开(公告)日：2016-03-31

申请号：US14499116

申请日：2014-09-27

申请人： International Business Machines Corporation

发明人： Sunit S. Mahajan ,  Teodor K. Todorov

IPC分类号： H01L31/18 ,  C23C16/52 ,  C23C16/46 ,  H01L31/032 ,  C23C16/455

CPC分类号： H01L31/18 ,  C23C14/0629 ,  C23C14/24 ,  C23C16/455 ,  C23C16/46 ,  C23C16/52 ,  H01L31/0322 ,  H01L31/0324 ,  H01L31/0326 ,  Y02E10/541 ,  Y02P70/521

摘要： Techniques for precisely controlling the composition of volatile components (such as sulfur (S), selenium (Se), and tin (Sn)) of chalcogenide semiconductors in real-time—during production of the material are provided. In one aspect, a method for forming a chalcogenide semiconductor material includes providing a S source(s) and a Se source(s); heating the S source(s) to form a S-containing vapor; heating the Se source(s) to form a Se-containing vapor; passing a carrier gas first through the S-containing vapor and then through the Se-containing vapor, wherein the S-containing vapor and the Se-containing vapor are transported via the carrier gas to a sample; and contacting the S-containing vapor and the Se-containing vapor with the sample under conditions sufficient to form the chalcogenide semiconductor material. A multi-chamber processing apparatus is also provided.

摘要翻译： 提供了在生产材料期间实时精确控制硫属元素半导体的挥发性组分（如硫（S），硒（Se）和锡（Sn））的组成的技术。 一方面，形成硫族化物半导体材料的方法包括提供S源和Se源; 加热S源以形成含S蒸气; 加热Se源以形成含Se蒸气; 首先使载气通过含S蒸气，然后通过含Se蒸气，其中含S蒸气和含Se的蒸气经载气传输至样品; 并在足以形成硫族化物半导体材料的条件下将含S蒸气和含Se蒸气与样品接触。 还提供了多腔室处理装置。

公开(公告)号：US09228257B2

公开(公告)日：2016-01-05

申请号：US13446272

申请日：2012-04-13

申请人： Jitendra S. Goela ,  Nathaniel E. Brese

发明人： Jitendra S. Goela ,  Nathaniel E. Brese

IPC分类号： C23C16/30 ,  C01G9/08 ,  C04B35/547 ,  C04B35/645 ,  C23C14/06 ,  C23C14/35 ,  G02B1/10 ,  G02B1/02

CPC分类号： G02B1/14 ,  C01G9/08 ,  C04B35/547 ,  C04B35/6455 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/72 ,  C04B2235/9653 ,  C23C14/0629 ,  C23C14/357 ,  C23C16/306 ,  G02B1/02 ,  G02B1/10

摘要： Low scatter water clear zinc sulfide with reduced metal contamination is prepared by coating a chuck which holds zinc sulfide and machining the zinc sulfide with uncoated particles. An inert foil is cleaned with an acid cleaning method and also cleaning the zinc sulfide. The zinc sulfide is wrapped in the inert foil and then treated by a HIP process to provide a low scatter water-clear zinc sulfide. The low scatter water-clear zinc sulfide may be used in articles such as windows and domes.

公开(公告)号：US09157153B2

公开(公告)日：2015-10-13

申请号：US13467868

申请日：2012-05-09

申请人： Mariana Rodica Munteanu ,  Amith Kumar Murali ,  Brian Josef Bartholomeusz ,  Vardaan Chawla

发明人： Mariana Rodica Munteanu ,  Amith Kumar Murali ,  Brian Josef Bartholomeusz ,  Vardaan Chawla

IPC分类号： H01L21/00 ,  C23C16/56 ,  C23C14/06 ,  C23C14/58 ,  C23C16/30 ,  H01L31/032

CPC分类号： C23C16/56 ,  C23C14/0623 ,  C23C14/0629 ,  C23C14/5866 ,  C23C16/305 ,  C23C16/306 ,  H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

摘要： In one embodiment, a method includes depositing a chalcogenide precursor layer onto a substrate, introducing a cover into proximity with the precursor layer, and annealing the precursor layer in proximity with of the cover, where the annealing is performed in a constrained volume, and where the presence of the cover reduces decomposition of volatile species from the precursor layer during annealing.

摘要翻译： 在一个实施方案中，一种方法包括将硫族化物前体层沉积到基底上，将盖引入靠近前体层，以及使覆盖层附近的前体层退火，其中退火在约束体积内进行，其中 覆盖层的存在减少了退火过程中挥发物质从前体层的分解。

公开(公告)号：US08628617B2

公开(公告)日：2014-01-14

申请号：US12623367

申请日：2009-11-20

申请人： Erel Milshtein

发明人： Erel Milshtein

IPC分类号： C23C16/00 ,  C23C16/455

CPC分类号： C23C14/243 ,  C23C14/0623 ,  C23C14/0629 ,  C23C14/24

摘要： A method and apparatus for depositing a film on a substrate includes introducing a vaporizable material from a source positioned above a substrate. The vaporizable material is vaporized and directed as an vapor feed stream from the source, away from the substrate. The vapor feed stream is redirected as a plume from a redirector, towards the substrate and deposited as a film on the substrate.

摘要翻译： 用于在衬底上沉积膜的方法和装置包括从位于衬底上方的源引入可蒸发材料。 可蒸发的材料被蒸发并作为来自源的蒸气进料流被引导离开基底。 将蒸汽进料流作为羽流从重定向器重新定位到衬底，并作为膜沉积在衬底上。