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115 条记录 (耗时 0.02 秒)

    Lead plating method for GMR head manufacture
    91.
    发明授权
    Lead plating method for GMR head manufacture 失效
    GMR头制造的铅电镀方法

    公开(公告)号：US06973712B2

    公开(公告)日：2005-12-13

    申请号：US10093106

    申请日：2002-03-07

    申请人： Chao-Peng Chen ,  Kevin Lin ,  Jei-Wei Chang ,  Kochan Ju ,  Hui-Chuan Wang

    发明人： Chao-Peng Chen ,  Kevin Lin ,  Jei-Wei Chang ,  Kochan Ju ,  Hui-Chuan Wang

    IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/127 ,  H04R31/00

    CPC分类号： B82Y10/00 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3903 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T29/49128

    摘要： A major problem in Lead Overlay design for GMR structures is that the magnetic read track width is wider than the physical read track width. This is due to high interfacial resistance between the leads and the GMR layer which is an unavoidable side effect of prior art methods. The present invention uses electroplating preceded by a wet etch to fabricate the leads. This approach requires only a thin protection layer over the GMR layer to ensure that interface resistance is minimal. Using wet surface cleaning avoids sputtering defects and plating is compatible with this so the cleaned surface is preserved Only a single lithography step is needed to define the track since there is no re-deposition involved.

    摘要翻译： GMR结构的Lead Overlay设计中的一个主要问题是磁性读取磁道宽度比物理读取磁道宽度宽。 这是由于引线和GMR层之间的高界面电阻，这是现有技术方法的不可避免的副作用。 本发明使用在湿蚀刻之前的电镀来制造引线。 该方法仅需要在GMR层上的薄保护层，以确保接口电阻最小。 使用湿表面清洁可以避免溅射缺陷，电镀与此相容，因此清洁表面被保留只需要一个光刻步骤来定义轨道，因为没有重新沉积。

    Self-pinned GMR structure by annealing
    92.
    发明申请
    Self-pinned GMR structure by annealing 失效
    通过退火自固定GMR结构

    公开(公告)号：US20050252576A1

    公开(公告)日：2005-11-17

    申请号：US10846406

    申请日：2004-05-14

    申请人： Yun-Fei Li ,  Hui-Chuan Wang ,  Tong Zhao ,  Chyu-Jiuh Torng

    发明人： Yun-Fei Li ,  Hui-Chuan Wang ,  Tong Zhao ,  Chyu-Jiuh Torng

    IPC分类号： H01F10/12 ,  H01F10/32 ,  H01F41/30

    CPC分类号： B82Y25/00 ,  B82Y40/00 ,  H01F10/3268 ,  H01F41/304 ,  Y10T29/49044

    摘要： In a conventional spin valve the shunt resistance of the pinning layer reduces the overall efficiency of the device. This problem has been overcome by using IrMn for the pinning layer at a thickness of about 20 Angstroms or less. For the IrMn to be fully effective it must be subjected to a two-step anneal, first in the presence of a high field (about 10 kOe) for several hours and then in a low field (about 500 Oe) while it cools. The result, in addition to improved pinning, is the ability to do testing at the full film and full wafer levels.

    摘要翻译： 在传统的自旋阀中，钉扎层的分流电阻降低了器件的整体效率。 通过使用IrMn作为钉扎层的约20埃或更小的厚度已经克服了这个问题。 为了使IrMn完全有效，必须先进行两步退火，首先在高场（约10kOe）存在数小时，然后在低场（约500Oe）的温度下冷却。 结果，除了改进钉扎之外，还可以在整个薄膜和全晶圆级别进行测试。

    TMR device with improved MgO barrier
    95.
    发明授权
    TMR device with improved MgO barrier 有权
    具有改善的MgO屏障的TMR器件

    公开(公告)号：US08202572B2

    公开(公告)日：2012-06-19

    申请号：US12927698

    申请日：2010-11-22

    申请人： Tong Zhao ,  Hui-Chuan Wang ,  Min Li ,  Kunliang Zhang

    发明人： Tong Zhao ,  Hui-Chuan Wang ,  Min Li ,  Kunliang Zhang

    IPC分类号： H01L21/00

    CPC分类号： H01F41/307 ,  B82Y40/00 ,  G11C11/161 ,  H01L43/12

    摘要： A method of forming a high performance magnetic tunnel junction (MTJ) is disclosed wherein the tunnel barrier includes at least three metal oxide layers. The tunnel barrier stack is partially built by depositing a first metal layer, performing a natural oxidation (NOX) process, depositing a second metal layer, and performing a second NOX process to give a MOX1/MOX2 configuration. An uppermost metal layer on the MOX2 layer is not oxidized until after the MTJ stack is completely formed and an annealing process is performed to drive unreacted oxygen in the MOX1 and MOX2 layers into the uppermost metal layer. In an alternative embodiment, a plurality of metal oxide layers is formed on the MOX1 layer before the uppermost metal layer is deposited. The resulting MTJ stack has an ultralow RA around 1 ohm-μm2 and maintains a high magnetoresistive ratio characteristic of a single metal oxide tunnel barrier layer.

    摘要翻译： 公开了一种形成高性能磁隧道结（MTJ）的方法，其中隧道势垒包括至少三个金属氧化物层。 通过沉积第一金属层，执行自然氧化（NOX）工艺，沉积第二金属层以及执行第二NOX工艺以产生MOX1 / MOX2配置来部分构建隧道势垒堆叠。 在MOX2层上的最上层的金属层直到MTJ堆叠完全形成之后才被氧化，并且进行退火处理以将MOX1和MOX2层中的未反应的氧气驱入最上层的金属层。 在替代实施例中，在最上层金属层被沉积​​之前，在MOX1层上形成多个金属氧化物层。 所得到的MTJ堆叠具有约1欧姆 - μm2的超低RA，并且保持单个金属氧化物隧道势垒层的高磁阻比特性。

    TMR device with novel free layer structure
    96.
    发明申请
    TMR device with novel free layer structure 有权
    TMR器件具有新颖的自由层结构

    公开(公告)号：US20120038012A1

    公开(公告)日：2012-02-16

    申请号：US13317485

    申请日：2011-10-19

    申请人： Tong Zhao ,  Hui-Chuan Wang ,  Min Li ,  Kunliang Zhang

    发明人： Tong Zhao ,  Hui-Chuan Wang ,  Min Li ,  Kunliang Zhang

    IPC分类号： H01L29/82

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3906 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    摘要： A composite free layer having a FL1/insertion/FL2 configuration is disclosed for achieving high dR/R, low RA, and low λ in TMR or GMR sensors. Ferromagnetic FL1 and FL2 layers have (+) λ and (−) λ values, respectively. FL1 may be CoFe, CoFeB, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, or Nb. FL2 may be CoFe, NiFe, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, Nb, or B. The thin insertion layer includes at least one magnetic element such as Co, Fe, and Ni, and at least one non-magnetic element selected from Ta, Ti, W, Zr, Hf, Nb, Mo, V, Cr, or B. In a TMR stack with a MgO tunnel barrier, dR/R>60%, λ˜1+10−6, and RA=1.2 ohm-um2 when FL1 is CoFe/CoFeB/CoFe, FL2 is CoFe/NiFe/CoFe, and the insertion layer is CoTa or CoFeBTa.

    摘要翻译： 公开了具有FL1 /插入/ FL2配置的复合自由层，用于在TMR或GMR传感器中实现高dR / R，低RA和低λ。 铁磁FL1和FL2层分别具有（+）λ和（ - ）λ值。 FL1可以是CoFe，CoFeB或其与Ni，Ta，Mn，Ti，W，Zr，Hf，Tb或Nb的合金。 FL2可以是CoFe，NiFe或其与Ni，Ta，Mn，Ti，W，Zr，Hf，Tb，Nb或B的合金。薄插入层包括至少一种诸如Co，Fe和Ni 以及选自Ta，Ti，W，Zr，Hf，Nb，Mo，V，Cr或B中的至少一种非磁性元素。在具有MgO隧道势垒的TMR堆叠中，dR / R> 60％，λ 〜1 + 10-6，当FL1为CoFe / CoFeB / CoFe时，RA = 1.2ohm-um2，FL2为CoFe / NiFe / CoFe，插入层为CoTa或CoFeBTa。

    TMR device with surfactant layer on top of CoFexBy/CoFez inner pinned layer
    99.
    发明授权
    TMR device with surfactant layer on top of CoFexBy/CoFez inner pinned layer 有权
    在CoFexBy / CoFez内部固定层顶部具有表面活性剂层的TMR器件

    公开(公告)号：US07986498B2

    公开(公告)日：2011-07-26

    申请号：US12321901

    申请日：2009-01-27

    申请人： Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Kunliang Zhang

    发明人： Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Kunliang Zhang

    IPC分类号： G11B5/127

    CPC分类号： H01L43/08 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3204 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3281 ,  H01F10/3295 ,  H01F41/303 ,  H01L43/12 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49041 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T29/49067

    摘要： A high performance TMR element is fabricated by inserting an oxygen surfactant layer (OSL) between a pinned layer and AlOx tunnel barrier layer in a bottom spin valve configuration. The pinned layer preferably has a SyAP configuration with an outer pinned layer, a Ru coupling layer, and an inner pinned layer comprised of CoFeXBY/CoFeZ wherein x=0 to 70 atomic %, y=0 to 30 atomic %, and z=0 to 100 atomic %. The OSL is formed by treating the CoFeZ layer with oxygen plasma. The AlOx tunnel barrier has improved uniformity of about 2% across a 6 inch wafer and can be formed from an Al layer as thin as 5 Angstroms. As a result, the Hin value can be decreased by ⅓ to about 32 Oe. A dR/R of 25% and a RA of 3 ohm-cm2 have been achieved for TMR read head applications.

    摘要翻译： 通过在底部自旋阀配置中的钉扎层和AlOx隧道势垒层之间插入氧表面活性剂层（OSL）来制造高性能TMR元件。 钉扎层优选具有带外部被钉扎层，Ru耦合层和由CoFeXBY / CoFeZ组成的内部钉扎层的SyAP构型，其中x = 0至70原子％，y = 0至30原子％，z = 0 至100原子％。 OSL通过用氧等离子体处理CoFeZ层而形成。 AlOx隧道势垒在6英寸晶片上提高了约2％的均匀性，并且可以由薄至5埃的Al层形成。 因此，Hin值可以减少1/3至约32 Oe。 对于TMR读头应用，已经实现了25％的dR / R和3ohm-cm 2的RA。