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    Magnetic domain wall movement element and magnetic array
    1.
    发明授权
    Magnetic domain wall movement element and magnetic array 有权

    公开(公告)号：US12201033B2

    公开(公告)日：2025-01-14

    申请号：US17543314

    申请日：2021-12-06

    Applicant: TDK CORPORATION

    Inventor： Shogo Yonemura ,  Tomoyuki Sasaki ,  Tatsuo Shibata

    IPC: H01L29/82 ,  H01L27/14 ,  H01L29/66 ,  H10B61/00 ,  H10N50/80 ,  H10N50/85

    Abstract: A magnetic domain wall movement element includes: a laminate including a ferromagnetic layer, a non-magnetic layer, and a magnetic domain wall movement layer; a first conductive layer; and a first surface layer laminated above a substrate in order from the substrate, wherein the non-magnetic layer is sandwiched between the ferromagnetic layer and the magnetic domain wall movement layer, wherein the first conductive layer is connected to an upper surface of the magnetic domain wall movement layer, wherein the first surface layer contacts at least a part of an upper surface of the magnetic domain wall movement layer, and wherein the resistivity of the first surface layer is higher than the resistivity of the magnetic domain wall movement layer.

    Magnetic domain wall displacement element, magnetic recording array, and semiconductor device
    2.
    发明授权
    Magnetic domain wall displacement element, magnetic recording array, and semiconductor device 有权

    公开(公告)号：US11790967B2

    公开(公告)日：2023-10-17

    申请号：US17420053

    申请日：2020-05-15

    Applicant: TDK CORPORATION

    Inventor： Shogo Yamada ,  Tatsuo Shibata ,  Yugo Ishitani

    IPC: G11C11/16 ,  H01L29/82 ,  H10N50/10 ,  H01L27/105 ,  G11C11/15

    CPC classification number: G11C11/161 ,  G11C11/1675 ,  H01L29/82 ,  H10N50/10 ,  G11C11/15 ,  H01L27/105

    Abstract: A magnetic domain wall displacement element includes a first ferromagnetic layer, a second ferromagnetic layer extending in a second direction and magnetically recordable, a nonmagnetic layer, and a first conductive part having a first intermediate layer and a second conductive part having a second intermediate layer, in which the first intermediate layer is sandwiched between first and second magnetization regions and exhibiting first and second magnetization directions, the second intermediate layer is sandwiched between a third magnetization region and exhibiting the second magnetization direction and a fourth magnetization region exhibiting the first magnetization direction in the first direction, and an area of the first magnetization region is larger than an area of the second magnetization region and an area of the third magnetization region is smaller than an area of the fourth magnetization region in a cross section in the first direction and the second direction.

    Magnetic domain wall movement element and magnetic recording array
    3.
    发明授权
    Magnetic domain wall movement element and magnetic recording array 有权

    公开(公告)号：US11653573B2

    公开(公告)日：2023-05-16

    申请号：US17039244

    申请日：2020-09-30

    Applicant: TDK CORPORATION

    Inventor： Takuya Ashida ,  Tatsuo Shibata

    IPC: H10N50/80 ,  G11C11/16 ,  H10B61/00

    CPC classification number: H10N50/80 ,  G11C11/161 ,  H10B61/22

    Abstract: A magnetic domain wall movement element includes a wiring layer containing a ferromagnetic material, a non-magnetic layer in contact with the first surface of the wiring layer, a first conductive layer connected to the first surface of the wiring layer and containing a ferromagnetic material; and a second conductive layer connected to the wiring layer at a distance from the first conductive layer. A first part of the connection face of the first conductive layer is directly connected to the wiring layer, and a second part of the connection face other than the first part is connected to the wiring layer via the non-magnetic layer.

    Magnetic recording array and magnetic recording device
    4.
    发明授权
    Magnetic recording array and magnetic recording device 有权

    公开(公告)号：US11017821B2

    公开(公告)日：2021-05-25

    申请号：US16866655

    申请日：2020-05-05

    Applicant: TDK CORPORATION

    Inventor： Takuya Ashida ,  Tatsuo Shibata

    IPC: G11C5/08 ,  G11C11/16 ,  H01L43/10 ,  H01L27/22 ,  H01L43/08

    Abstract: A magnetic recording array includes: a plurality of domain wall moving elements; a first wiring which is electrically connected to a reference potential and is electrically connected to at least one domain wall moving element of the plurality of domain wall moving elements; a second wiring which is electrically connected to at least two or more domain wall moving elements of the plurality of domain wall moving elements; a first switching element which is connected between each of the domain wall moving elements and the first wiring; and a second switching element which is connected between each of the domain wall moving elements and the second wiring, wherein an OFF resistance of the first switching element is smaller than an OFF resistance of the second switching element.

    Multiply and accumulate calculation device, neuromorphic device, and method for using multiply and accumulate calculation device
    9.
    发明授权
    Multiply and accumulate calculation device, neuromorphic device, and method for using multiply and accumulate calculation device 有权

    公开(公告)号：US11429348B2

    公开(公告)日：2022-08-30

    申请号：US16759529

    申请日：2019-02-27

    Applicant: TDK CORPORATION

    Inventor： Tatsuo Shibata ,  Tomoyuki Sasaki

    IPC: G06F7/544 ,  G06F7/02 ,  G06F7/38 ,  G06F7/50 ,  G06F7/523 ,  G06N3/063

    Abstract: A multiply and accumulate calculation device includes a multiple calculation unit and a accumulate calculation unit. The multiple calculation unit includes a plurality of multiple calculation elements, which are variable resistance elements, and at least one reference element. The accumulate calculation unit includes an output detector configured to detect a total value of at least outputs from the plurality of multiple calculation elements. Each of the plurality of multiple calculation elements is a magnetoresistance effect element including a magnetized free layer having a magnetic domain wall, a magnetization fixed layer in which a magnetization direction is fixed, and a nonmagnetic layer sandwiched between the magnetized free layer and the magnetized fixed layer. The reference element is a reference magnetoresistance effect element having a magnetization free layer that does not have the magnetic domain wall.

    Magnetization control element, magnetic memory, and magnetic recording system
    10.
    发明授权
    Magnetization control element, magnetic memory, and magnetic recording system 有权

    公开(公告)号：US11244781B2

    公开(公告)日：2022-02-08

    申请号：US16606271

    申请日：2018-04-20

    Applicant: TDK CORPORATION

    Inventor： Tatsuo Shibata ,  Masashi Sahashi ,  Tomohiro Nozaki

    IPC: H01F10/32 ,  G11B5/02 ,  H01L43/10 ,  H01L27/22

    Abstract: A magnetization control element according to an aspect of the invention includes a magnetization control layer containing a magnetoelectric material exhibiting a magnetoelectric effect, and a magnetic coupling layer that is magnetically coupled to a magnetization of a first surface of the magnetization control layer through exchange coupling and exhibits a magnetic state according to the magnetization of the first surface, wherein a magnetization having a component in a direction opposite to a direction of a magnetization of the magnetic coupling layer is imparted to the magnetization control layer.

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