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    Pellicle and method for manufacturing the same
    1.
    发明授权
    Pellicle and method for manufacturing the same 有权

    公开(公告)号：US09864270B2

    公开(公告)日：2018-01-09

    申请号：US14996966

    申请日：2016-01-15

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    Inventor： Jeng-Shin Ma ,  Tsiao-Chen Wu ,  Chi-Ming Yang ,  Chyi Shyuan Chern ,  Chih-Cheng Lin ,  Yun-Yue Lin

    IPC: G03F1/62 ,  G03F1/64

    CPC classification number: G03F1/64 ,  G03F1/62

    Abstract: A method for manufacturing a pellicle includes: providing a supporting substrate; forming an oxide layer over the supporting substrate; forming a metal layer over the oxide layer; forming a graphene layer over the metal layer; and removing at least a portion of the supporting substrate and the oxide layer. An associated method includes: providing a supporting substrate; forming a first silicon carbide (SiC) layer or a diamond layer over the supporting substrate; forming a graphene layer over the SiC layer or the diamond layer; and removing at least a portion of the supporting substrate and the first silicon carbide (SiC) layer or the diamond layer; wherein the pellicle is at least partially transparent to extreme ultraviolet (EUV) radiation. An associated pellicle is also disclosed.

    Method for patterning a photosensitive layer
    5.
    发明授权
    Method for patterning a photosensitive layer 有权
    图案感光层的方法

    公开(公告)号：US08815496B2

    公开(公告)日：2014-08-26

    申请号：US13774681

    申请日：2013-02-22

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Hsiao-Tzu Lu ,  Kuei Shun Chen ,  Tsiao-Chen Wu ,  Vencent Chang ,  George Liu

    IPC: G03F7/26

    CPC classification number: G03F7/405 ,  G03F7/0035

    Abstract: The method of patterning a photosensitive layer includes providing a substrate including a first layer formed thereon, treating the substrate including the first layer with cations, forming a first photosensitive layer over the first layer, patterning the first photosensitive layer to form a first pattern, treating the first pattern with cations, forming a second photosensitive layer over the treated first pattern, patterning the second photosensitive layer to form a second pattern, and processing the first layer using the first and second patterns as a mask.

    Abstract translation: 图案化感光层的方法包括提供包括其上形成的第一层的基板，用阳离子处理包括第一层的基板，在第一层上形成第一感光层，图案化第一感光层以形成第一图案，处理 具有阳离子的第一图案，在经处理的第一图案上形成第二感光层，图案化第二感光层以形成第二图案，并且使用第一图案和第二图案作为掩模来处理第一层。

    PELLICLE AND METHOD FOR MANUFACTURING THE SAME
    6.
    发明申请
    PELLICLE AND METHOD FOR MANUFACTURING THE SAME 有权

    公开(公告)号：US20170205705A1

    公开(公告)日：2017-07-20

    申请号：US14996966

    申请日：2016-01-15

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    Inventor： Jeng-Shin Ma ,  Tsiao-Chen Wu ,  Chi-Ming Yang ,  Chyi Shyuan Chern ,  Chih-Cheng Lin ,  Yun-Yue Lin

    IPC: G03F1/64

    CPC classification number: G03F1/64 ,  G03F1/62

    Abstract: A method for manufacturing a pellicle includes: providing a supporting substrate; forming an oxide layer over the supporting substrate; forming a metal layer over the oxide layer; forming a graphene layer over the metal layer; and removing at least a portion of the supporting substrate and the oxide layer. An associated method includes: providing a supporting substrate; forming a first silicon carbide (SiC) layer or a diamond layer over the supporting substrate; forming a graphene layer over the SiC layer or the diamond layer; and removing at least a portion of the supporting substrate and the first silicon carbide (SiC) layer or the diamond layer; wherein the pellicle is at least partially transparent to extreme ultraviolet (EUV) radiation. An associated pellicle is also disclosed.

    Photoresist having improved extreme-ultraviolet lithography imaging performance
    7.
    发明授权
    Photoresist having improved extreme-ultraviolet lithography imaging performance 有权
    光刻胶具有改进的极紫外光刻成像性能

    公开(公告)号：US09389506B2

    公开(公告)日：2016-07-12

    申请号：US14742862

    申请日：2015-06-18

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Shu-Hao Chang ,  Tsiao-Chen Wu ,  Chih-Tsung Shih

    IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  C07C309/65 ,  C07C381/12 ,  G03F7/20

    CPC classification number: G03F7/038 ,  C07C309/65 ,  C07C381/12 ,  G03F7/0045 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/20

    Abstract: Provided herein is a photoresist compound with improved extreme-ultraviolet lithography image performance. The photoresist includes a polymer that is free of an aromatic group and a photo acid generator (PAG) free of aromatic groups. The PAG includes an anion component and a cation component, wherein the anion component has one of the several specified chemical formulas and the cation component also has a specified chemical formula. The anion component includes a material selected from the group consisting of methyl and ethyl and the cation component includes a material selected from the group consisting of: an alkyl group, an alkenyl group, and an oxoalkyl group.

    Abstract translation: 本文提供具有改进的极紫外光刻图像性能的光致抗蚀剂化合物。 光致抗蚀剂包括不含芳族基团的聚合物和不含芳族基团的光酸产生剂（PAG）。 PAG包括阴离子组分和阳离子组分，其中阴离子组分具有若干规定的化学式之一，阳离子组分也具有指定的化学式。 阴离子组分包括选自甲基和乙基的材料，阳离子组分包括选自：烷基，烯基和氧代烷基的材料。

    Reflective mask and method of making same
    8.
    发明授权
    Reflective mask and method of making same 有权
    反光罩及其制作方法

    公开(公告)号：US09213232B2

    公开(公告)日：2015-12-15

    申请号：US14531639

    申请日：2014-11-03

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Pei-Cheng Hsu ,  Chih-Tsung Shih ,  Chia-Jen Chen ,  Tsiao-Chen Wu ,  Shinn-Sheng Yu ,  Hsin-Chang Lee ,  Anthony Yen

    IPC: G03F1/24 ,  G03F1/48 ,  H01L21/033

    CPC classification number: G03F1/24 ,  G03F1/48 ,  H01L21/0337

    Abstract: A reflective mask is described. The mask includes a low thermal expansion material (LTEM) substrate, a conductive layer deposited on a first surface of the LTEM substrate, a stack of reflective multilayers (ML) deposited on a second surface of the LTEM substrate, a capping layer deposited on the stack of reflective ML, a first absorption layer deposited on the first capping layer, a main pattern, and a border ditch. The border ditch reaches to the capping layer, a second absorption layer deposited inside the border ditch, and where the second absorption layer contacts the capping layer. In some instances, the border ditch crosses the capping layer and partially enters the reflective multilayer.

    Abstract translation: 描述了一种反光罩。 掩模包括低热膨胀材料（LTEM）衬底，沉积在LTEM衬底的第一表面上的导电层，沉积在LTEM衬底的第二表面上的反射多层堆叠（ML），沉积在 堆叠的反射ML，沉积在第一盖层上的第一吸收层，主图案和边界沟。 边界沟到达覆盖层，沉积在边界沟内的第二吸收层，第二吸收层与覆盖层接触。 在一些情况下，边界沟穿过覆盖层并部分地进入反射层。

    Method for Patterning a Photosensitive Layer
    9.
    发明申请
    Method for Patterning a Photosensitive Layer 有权
    图案化感光层的方法

    公开(公告)号：US20130164686A1

    公开(公告)日：2013-06-27

    申请号：US13774681

    申请日：2013-02-22

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Hsiao-Tzu Lu ,  Kuei Shun Chen ,  Tsiao-Chen Wu ,  Vencent Chang ,  George Liu

    IPC: G03F7/20

    CPC classification number: G03F7/405 ,  G03F7/0035

    Abstract: The method of patterning a photosensitive layer includes providing a substrate including a first layer formed thereon, treating the substrate including the first layer with cations, forming a first photosensitive layer over the first layer, patterning the first photosensitive layer to form a first pattern, treating the first pattern with cations, forming a second photosensitive layer over the treated first pattern, patterning the second photosensitive layer to form a second pattern, and processing the first layer using the first and second patterns as a mask.

    Abstract translation: 图案化感光层的方法包括提供包括其上形成的第一层的基板，用阳离子处理包括第一层的基板，在第一层上形成第一感光层，图案化第一感光层以形成第一图案，处理 具有阳离子的第一图案，在经处理的第一图案上形成第二感光层，图案化第二感光层以形成第二图案，并且使用第一图案和第二图案作为掩模来处理第一层。

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