知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

6 records (took 0.044 seconds)

    Method of Inspecting Wafer Using Electron Beam
    1.
    发明申请
    Method of Inspecting Wafer Using Electron Beam 审中-公开
    使用电子束检查晶片的方法

    公开(公告)号：US20160293379A1

    公开(公告)日：2016-10-06

    申请号：US15084059

    申请日：2016-03-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Souk Kim ,  Chung-sam Jun ,  Woo-seok Ko ,  Sang-Kil Lee ,  Kwang-il Shin ,  Yu-sin Yang ,  Min-chul Yoon

    IPC: H01J37/22 ,  H01J37/20

    CPC classification number: H01J37/222 ,  H01J37/20 ,  H01J37/28 ,  H01J2237/20214 ,  H01J2237/226 ,  H01J2237/2817

    Abstract: A method of inspecting a wafer may include: loading of a wafer onto a stage, the wafer having a plurality of dies thereon; positioning of the wafer such that a plurality of electron beam columns on the wafer respectively face a partial region of each of the plurality of dies on the wafer; scanning the respective partial regions of each of the plurality of dies by using the electron beam columns; and combining a plurality of partial images that are obtained by scanning the partial regions to provide a die image.

    Abstract translation: 检查晶片的方法可以包括：将晶片装载到台上，所述晶片在其上具有多个管芯; 晶片的定位使得晶片上的多个电子束列分别面对晶片上的多个管芯中的每一个的部分区域; 通过使用电子束柱扫描多个管芯中的每一个的各个部分区域; 以及组合通过扫描所述部分区域获得的多个部分图像以提供管芯图像。

    Wafer Inspection Apparatus Using Three-Dimensional Image
    3.
    发明申请
    Wafer Inspection Apparatus Using Three-Dimensional Image 审中-公开
    晶圆检测仪器采用三维图像

    公开(公告)号：US20160261786A1

    公开(公告)日：2016-09-08

    申请号：US14959443

    申请日：2015-12-04

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jeong-ho Ahn ,  Yu-sin Yang ,  Yun-jung Jee ,  Woo-seok Ko

    IPC: H04N5/232 ,  G06T7/00 ,  H04N5/225 ,  H04N13/02

    CPC classification number: H04N5/23212 ,  G06T7/0004 ,  G06T2207/30148 ,  H04N5/2256 ,  H04N13/20

    Abstract: Provided is a wafer inspection apparatus using three-dimensional (3D) images, which apparatus may acquire a 3D image by adjusting a focal position at a high speed, and inspect a wafer by using the 3D image so that a 3D inspection operation may be precisely performed on patterns formed on the wafer at a high speed. The wafer inspection apparatus may include a stage on which a wafer is disposed, an optical apparatus configured to acquire an image of a pattern formed on the wafer by using a scan method, a focus adjusting unit configured to change a focal position of light irradiated to the wafer according to a scan speed of the optical apparatus, and an image processor configured to integrate images corresponding to focal positions and generate and analyze 3D images.

    Abstract translation: 提供了使用三维（3D）图像的晶片检查装置，该装置可以通过高速调节焦点位置来获取3D图像，并且通过使用3D图像来检查晶片，使得3D检查操作可以精确地 以高速度在晶片上形成的图案上进行。 晶片检查装置可以包括设置晶片的台，配置为通过使用扫描方法获取形成在晶片上的图案的图像的光学装置，配置为改变照射到的光的焦点位置的聚焦调整单元 根据所述光学装置的扫描速度的所述晶片，以及被配置为对与焦点位置相对应的图像进行积分并生成和分析3D图像的图像处理器。

    Conductive atomic force microscope and method of operating the same
    4.
    发明授权
    Conductive atomic force microscope and method of operating the same 有权
    导电原子力显微镜及其操作方法

    公开(公告)号：US09261532B1

    公开(公告)日：2016-02-16

    申请号：US14694115

    申请日：2015-04-23

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyun-woo Kim ,  Woo-seok Ko ,  Young-hwan Kim ,  Jeong-hoi Kim ,  Baek-man Sung ,  Hyung-su Son ,  Chae-ho Shin ,  Yu-sin Yang ,  Jae-youn Wi ,  Sang-kil Lee ,  Chung-sam Jun

    IPC: G01Q60/40

    CPC classification number: G01Q60/40 ,  G01Q70/06

    Abstract: A conductive atomic force microscope including a plurality of probe structures each including a probe and a cantilever connected thereto, a power supplier applying a bias voltage, a current detector detecting a first current flowing between a sample object and each of the probes and a second current flowing between a measurement object and each of the probes, and calculating representative currents for the sample and measurement objects based on the first and second currents, respectively, and a controller calculating a ratio between representative currents of the sample object measured by each of the probe structures, calculating a scaling factor for scaling the representative current with respect to the measurement object measured by each of the probes, and determine a reproducible current measurement value based on the second measurement current and the scaling factor may be provided.

    Abstract translation: 一种导电原子力显微镜，包括多个探针结构，每个探针结构包括探针和连接到其上的悬臂，施加偏置电压的电源，检测在样品物体和每个探针之间流动的第一电流的电流检测器和第二电流 在测量对象和每个探针之间流动，并且基于第一和第二电流分别计算样本和测量对象的代表性电流，以及控制器，计算由每个探针测量的样本对象的代表性电流之间的比率 计算相对于由每个探针测量的测量对象的代表性电流的缩放因子，并且可以提供基于第二测量电流和缩放因子来确定可重现的电流测量值。

Patent Agency Ranking