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公开(公告)号：US20160180513A1
公开(公告)日：2016-06-23
申请号：US14819566
申请日：2015-08-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Il-suk Park , Jeong-ho Ahn , Hyung-suk Cho
CPC classification number: G06K9/481 , G06K9/6201 , G06K2009/6213 , G06K2209/19 , G06T7/001 , G06T2207/10061 , G06T2207/30148
Abstract: A method of automatic defect classification (ADC) includes detecting defective parts from a substrate wherein at least one unit process is performed; and classifying defect types of the respective defective parts, wherein the classifying includes obtaining a scanning electron microscope (SEM) image of each of the defective parts; registering information about the substrate in a graphic data system (GDS) image corresponding to each SEM image; defining a plurality of defects of interest (DOIs) categorizing defects of the respective defective parts; defining a DOI rule that is a criterion for determining which defects of the respective defective parts correspond to which DOI from among the DOIs; and analyzing the image to classify which defects of the respective defective parts correspond to which DOI from among the DOIs according to the DOI rule.
Abstract translation: 一种自动缺陷分类（ADC）的方法包括从基板检测缺陷部分，其中执行至少一个单元处理; 对各缺陷部分的缺陷类型进行分类，其中分类包括获得每个缺陷部分的扫描电子显微镜（SEM）图像; 在与每个SEM图像相对应的图形数据系统（GDS）图像中登记关于所述基板的信息; 定义分类各个缺陷部分的缺陷的多个感兴趣缺陷（DOI）; 定义DOI规则，其是用于确定相应缺陷部分的哪些缺陷对应于DOI中的哪个DOI的标准; 并分析图像，根据DOI规则将相应缺陷部分的哪些缺陷从DOI中对应于哪个DOI。
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2.发明申请APPARATUSES AND METHODS FOR EXTRACTING DEFECT DEPTH INFORMATION AND METHODS OF IMPROVING SEMICONDUCTOR DEVICE MANUFACTURING PROCESSES USING DEFECT DEPTH INFORMATION 审中-公开提供缺陷深度信息的方法和方法以及使用缺陷深度信息改进半导体器件制造工艺的方法公开(公告)号：US20140307052A1
公开(公告)日：2014-10-16
申请号：US14248684
申请日：2014-04-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeong-ho Ahn , Jong-cheon Sun , Dong-ryul Lee , Byoung-ho Lee , Dong-chul Ihm , Soo-bok Chin
CPC classification number: G01N21/9505 , G01N23/2251 , G02B21/367 , G06T7/001 , G06T2207/10016 , G06T2207/10056 , G06T2207/10061 , G06T2207/30148
Abstract: Apparatuses and methods for extracting defect depth information and methods of improving semiconductor device manufacturing processes using defect depth information are provided. The apparatuses may include an inspection assembly configured to obtain a plurality of optical images of a portion of an inspection object including a defect along a depth direction and a processor circuit configured to generate defect data using the plurality of optical images and provide defect depth information by comparing the defect data with comparison data in a library database.
Abstract translation: 提供了使用缺陷深度信息提取缺陷深度信息的装置和方法以及改进半导体器件制造工艺的方法。 所述装置可以包括检查组件，其被配置为获得包括沿着深度方向的缺陷的检查对象的一部分的多个光学图像，以及处理器电路，被配置为使用所述多个光学图像生成缺陷数据，并且通过 将缺陷数据与库数据库中的比较数据进行比较。
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公开(公告)号：US09727799B2
公开(公告)日：2017-08-08
申请号：US14819566
申请日：2015-08-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Il-suk Park , Jeong-ho Ahn , Hyung-suk Cho
CPC classification number: G06K9/481 , G06K9/6201 , G06K2009/6213 , G06K2209/19 , G06T7/001 , G06T2207/10061 , G06T2207/30148
Abstract: A method of automatic defect classification (ADC) includes detecting defective parts from a substrate wherein at least one unit process is performed; and classifying defect types of the respective defective parts, wherein the classifying includes obtaining a scanning electron microscope (SEM) image of each of the defective parts; registering information about the substrate in a graphic data system (GDS) image corresponding to each SEM image; defining a plurality of defects of interest (DOIs) categorizing defects of the respective defective parts; defining a DOI rule that is a criterion for determining which defects of the respective defective parts correspond to which DOI from among the DOIs; and analyzing the image to classify which defects of the respective defective parts correspond to which DOI from among the DOIs according to the DOI rule.
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公开(公告)号：US20160261786A1
公开(公告)日：2016-09-08
申请号：US14959443
申请日：2015-12-04
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeong-ho Ahn , Yu-sin Yang , Yun-jung Jee , Woo-seok Ko
CPC classification number: H04N5/23212 , G06T7/0004 , G06T2207/30148 , H04N5/2256 , H04N13/20
Abstract: Provided is a wafer inspection apparatus using three-dimensional (3D) images, which apparatus may acquire a 3D image by adjusting a focal position at a high speed, and inspect a wafer by using the 3D image so that a 3D inspection operation may be precisely performed on patterns formed on the wafer at a high speed. The wafer inspection apparatus may include a stage on which a wafer is disposed, an optical apparatus configured to acquire an image of a pattern formed on the wafer by using a scan method, a focus adjusting unit configured to change a focal position of light irradiated to the wafer according to a scan speed of the optical apparatus, and an image processor configured to integrate images corresponding to focal positions and generate and analyze 3D images.
Abstract translation: 提供了使用三维（3D）图像的晶片检查装置，该装置可以通过高速调节焦点位置来获取3D图像，并且通过使用3D图像来检查晶片，使得3D检查操作可以精确地 以高速度在晶片上形成的图案上进行。 晶片检查装置可以包括设置晶片的台，配置为通过使用扫描方法获取形成在晶片上的图案的图像的光学装置，配置为改变照射到的光的焦点位置的聚焦调整单元 根据所述光学装置的扫描速度的所述晶片，以及被配置为对与焦点位置相对应的图像进行积分并生成和分析3D图像的图像处理器。
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