公开(公告)号：US09653294B2

公开(公告)日：2017-05-16

申请号：US14957777

申请日：2015-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-sung Kim ,  Dae-yong Kang ,  Seung-chul Kwon ,  Shi-yong Yi

IPC: H01L21/302 ,  H01L21/033 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213 ,  H01L27/108

CPC classification number: H01L21/0337 ,  H01L21/0332 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/10855

Abstract: The present inventive concept provides a method of forming a fine pattern including forming a plurality of pillar-shaped guides that are regularly arranged on a feature layer.

公开(公告)号：US10138318B2

公开(公告)日：2018-11-27

申请号：US15225201

申请日：2016-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungchul Kwon ,  Jeongju Park ,  Shi-yong Yi ,  Eun Sung Kim ,  Kyeongmi Lee ,  Joona Bang ,  Sanghoon Woo

IPC: C08F12/20 ,  C08F293/00 ,  H01L21/027 ,  G03F7/00 ,  B82Y40/00

Abstract: A block copolymer includes a first polymer block and a second polymer block having different structures, and one of the first polymer block and the second polymer block has a halogen-substituted structure.

公开(公告)号：US20140004705A1

公开(公告)日：2014-01-02

申请号：US13711999

申请日：2012-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yool Kang ,  Suk-joo Lee ,  Jung-hyeon Lee ,  Shi-yong Yi

IPC: H01L21/027

CPC classification number: H01L21/027 ,  G03F7/0035 ,  G03F7/40 ,  H01L21/0273 ,  H01L21/0338 ,  H01L21/32139

Abstract: A method of forming fine patterns of a semiconductor device according to a double patterning process that uses acid diffusion is provided. In this method, a plurality of first mask patterns are formed on a substrate. A capping film including an acid source is formed on the exposed surface areas of the plurality of first mask patterns. A second mask layer is formed on the capping films. A plurality of acid diffused regions are formed within the second mask layer by diffusing acid obtained from the acid source from the capping films into the second mask layer. A plurality of second mask patterns are formed of residual parts of the second mask layer which remain after removing the acid diffused regions of the second mask layer.

Abstract translation: 提供了根据使用酸扩散的双重图案化工艺形成半导体器件的精细图案的方法。 在该方法中，在基板上形成多个第一掩模图案。 在多个第一掩模图案的暴露的表面区域上形成包括酸源的封盖膜。 在封盖膜上形成第二掩模层。 通过将从酸源获得的酸从封盖膜扩散到第二掩模层中，在第二掩模层内形成多个酸扩散区。 多个第二掩模图案由除去第二掩模层的酸扩散区域之后残留的第二掩模层的残留部分形成。

公开(公告)号：US10352964B2

公开(公告)日：2019-07-16

申请号：US15415034

申请日：2017-01-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyeong-mi Lee ,  Jeong-ju Park ,  Shi-yong Yi ,  Eun-sung Kim ,  Seung-chul Kwon ,  Sang-ouk Kim ,  Young-joo Choi

IPC: G01Q70/14 ,  G01Q60/28 ,  H01L21/67 ,  G01Q60/42 ,  H01L27/108

Abstract: A method of forming a micropattern, a substrate surface inspection apparatus, a cantilever set for an atomic force microscope, and a method of analyzing a surface of a semiconductor substrate, and a probe tip the method including forming pinning patterns on a semiconductor substrate; forming a neutral pattern layer in spaces between the pinning patterns; and inspecting a surface of a guide layer that includes the pinning patterns and the neutral pattern layer by using an atomic force microscope (AFM).

公开(公告)号：US08778598B2

公开(公告)日：2014-07-15

申请号：US13711999

申请日：2012-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yool Kang ,  Suk-joo Lee ,  Jung-hyeon Lee ,  Shi-yong Yi

IPC: G03F7/40

CPC classification number: H01L21/027 ,  G03F7/0035 ,  G03F7/40 ,  H01L21/0273 ,  H01L21/0338 ,  H01L21/32139

Abstract: A method of forming fine patterns of a semiconductor device according to a double patterning process that uses acid diffusion is provided. In this method, a plurality of first mask patterns are formed on a substrate. A capping film including an acid source is formed on the exposed surface areas of the plurality of first mask patterns. A second mask layer is formed on the capping films. A plurality of acid diffused regions are formed within the second mask layer by diffusing acid obtained from the acid source from the capping films into the second mask layer. A plurality of second mask patterns are formed of residual parts of the second mask layer which remain after removing the acid diffused regions of the second mask layer.

Abstract translation: 提供了根据使用酸扩散的双重图案化工艺形成半导体器件的精细图案的方法。 在该方法中，在基板上形成多个第一掩模图案。 在多个第一掩模图案的暴露的表面区域上形成包括酸源的封盖膜。 在封盖膜上形成第二掩模层。 通过将从酸源获得的酸从封盖膜扩散到第二掩模层中，在第二掩模层内形成多个酸扩散区。 多个第二掩模图案由除去第二掩模层的酸扩散区域之后残留的第二掩模层的残留部分形成。