公开(公告)号：US10138318B2

公开(公告)日：2018-11-27

申请号：US15225201

申请日：2016-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungchul Kwon ,  Jeongju Park ,  Shi-yong Yi ,  Eun Sung Kim ,  Kyeongmi Lee ,  Joona Bang ,  Sanghoon Woo

IPC: C08F12/20 ,  C08F293/00 ,  H01L21/027 ,  G03F7/00 ,  B82Y40/00

Abstract: A block copolymer includes a first polymer block and a second polymer block having different structures, and one of the first polymer block and the second polymer block has a halogen-substituted structure.

公开(公告)号：US20250102914A1

公开(公告)日：2025-03-27

申请号：US18639380

申请日：2024-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Honggu Im ,  Yonghoon Moon ,  Jeongju Park ,  Jicheol Park ,  Giyoung Song

IPC: G03F7/039 ,  C08F212/14 ,  C08F220/38 ,  C08F228/02 ,  G03F7/038 ,  H01L21/027

Abstract: Photoresist compositions and methods of manufacturing an integrated circuit device by using said photoresist compositions are described. The photoresist compositions may include a photosensitive polymer, a photoacid generator (PAG), and a solvent, wherein the photosensitive polymer contains a sulfonate group (—SO2O—) bonded with an α-trifluoromethylbenzyl group.