公开(公告)号：US10727078B2

公开(公告)日：2020-07-28

申请号：US15370290

申请日：2016-12-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong Ju Park ,  Kyeongmi Lee ,  Seungchul Kwon ,  Eunsung Kim ,  Shiyong Yi

IPC: H01L21/027 ,  H01L21/311 ,  H01L21/308 ,  H01L21/033 ,  H01L21/3105 ,  H01L21/02

Abstract: A method of forming fine patterns includes forming a mask on an etching target, forming an anti-reflective layer on the mask, forming fixing patterns such that top surfaces of the anti-reflective layer and fixing patterns are exposed, forming a block copolymer layer including first and second polymer blocks, and phase-separating the block copolymer layer to form first patterns and second patterns on the anti-reflective layer and the fixing patterns. The first and second patterns include the first and second polymer blocks, respectively. The anti-reflective layer has a neutral, i.e., non-selective, interfacial energy with respect to the first and second polymer blocks. The fixing patterns have a higher interfacial energy with respect to the first polymer block than the second polymer block.

公开(公告)号：US10138318B2

公开(公告)日：2018-11-27

申请号：US15225201

申请日：2016-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungchul Kwon ,  Jeongju Park ,  Shi-yong Yi ,  Eun Sung Kim ,  Kyeongmi Lee ,  Joona Bang ,  Sanghoon Woo

IPC: C08F12/20 ,  C08F293/00 ,  H01L21/027 ,  G03F7/00 ,  B82Y40/00

Abstract: A block copolymer includes a first polymer block and a second polymer block having different structures, and one of the first polymer block and the second polymer block has a halogen-substituted structure.