公开(公告)号：US20220310676A1

公开(公告)日：2022-09-29

申请号：US17739682

申请日：2022-05-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kook Tae Kim ,  Miseon Park ,  Jaesung Hur

IPC: H01L27/146

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a first pixel isolation structure disposed in a first trench which vertically extends from the first surface of the semiconductor substrate and defines a plurality of pixel regions, and a second pixel isolation structure disposed in a second trench vertically extending from the second surface of the semiconductor substrate. The second pixel isolation structure overlaps the first pixel isolation structure. The first pixel isolation structure includes a liner semiconductor pattern defining a gap region in the first trench, the liner semiconductor pattern including sidewall portions and a bottom portion connecting the sidewall portions, a liner insulating pattern disposed between the liner semiconductor pattern and the semiconductor substrate, and a capping insulating pattern disposed in the gap region of the liner semiconductor pattern.

公开(公告)号：US12302661B2

公开(公告)日：2025-05-13

申请号：US17980192

申请日：2022-11-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jonghyeon Noh ,  Kook Tae Kim ,  Jingyun Kim ,  Miseon Park ,  Jaewoong Lee

IPC: H01L27/146 ,  H10F39/00

Abstract: An image sensor includes: a substrate including a first surface and a second surface; an interlayer dielectric layer covering the first surface; and a pixel separation part disposed its the substrate, wherein the pixel separation part divides a plurality of unit pixels from each other, wherein the pixel separation part includes: a conductive structure that extends from the first surface toward the second surface; a first reflective structure disposed between the conductive structure and the substrate; and a front-side buried pattern disposed between the conductive structure and the interlayer dielectric layer and between the first reflective structure and the interlayer dielectric layer, wherein the first reflective structure includes first reflective liners and second reflective liners that are alternately disposed in a direction toward the conductive structure from the substrate, wherein a refractive index of the first reflective liners is different from a refractive index of the second reflective liners.

公开(公告)号：US20230170373A1

公开(公告)日：2023-06-01

申请号：US17980192

申请日：2022-11-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghyeon Noh ,  Kook Tae Kim ,  Jingyun Kim ,  Miseon Park ,  Jaewoong Lee

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14621 ,  H01L27/14629

Abstract: An image sensor includes: a substrate including a first surface and a second surface; an interlayer dielectric layer covering the first surface; and a pixel separation part disposed its the substrate, wherein the pixel separation part divides a plurality of unit pixels from each other, wherein the pixel separation part includes: a conductive structure that extends from the first surface toward the second surface; a first reflective structure disposed between the conductive structure and the substrate; and a front-side buried pattern disposed between the conductive structure and the interlayer dielectric layer and between the first reflective structure and the interlayer dielectric layer, wherein the first reflective structure includes first reflective liners and second reflective liners that are alternately disposed in a direction toward the conductive structure from the substrate, wherein a refractive index of the first reflective liners is different from a refractive index of the second reflective liners.

公开(公告)号：US12302660B2

公开(公告)日：2025-05-13

申请号：US17952479

申请日：2022-09-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jonghyeon Noh ,  Kook Tae Kim ,  Jingyun Kim ,  Miseon Park ,  Jaewoong Lee

IPC: H01L27/146 ,  H10F39/00

Abstract: An image sensor includes: a substrate including a first surface and a second surface; an interlayer dielectric layer covering the first surface; and a pixel separation part disposed its the substrate, wherein the pixel separation part divides a plurality of unit pixels from each other, wherein the pixel separation part includes: a conductive structure that extends from the first surface toward the second surface; a first reflective structure disposed between the conductive structure and the substrate; and a front-side buried pattern disposed between the conductive structure and the interlayer dielectric layer and between the first reflective structure and the interlayer dielectric layer, wherein the first reflective structure includes first reflective liners and second reflective liners that are alternately disposed in a direction toward the conductive structure from the substrate, wherein a refractive index of the first reflective liners is different from a refractive index of the second reflective liners.

公开(公告)号：US12272705B2

公开(公告)日：2025-04-08

申请号：US17239291

申请日：2021-04-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kook Tae Kim ,  Chang Kyu Lee ,  Dongmo Im ,  Ju-eun Kim ,  Miseon Park ,  Jungim Choe ,  Soojin Hong

IPC: H01L31/062 ,  H10F39/00

Abstract: An image sensor is provided and may include a semiconductor substrate having a surface and including trench, the trench extending from the surface into the semiconductor substrate, an insulating pattern provided in the trench; and a doped region in the semiconductor substrate and on the insulating patterns. The doped region includes a side portion on a side surface of the insulating pattern, and a bottom portion on a bottom surface of the insulating pattern. A thickness of the side portion of the doped region is from 85% to 115% of a thickness of the bottom portion of the doped region, and a number of dopants per unit area in the side portion of the doped region is from 85% to 115% of a number of dopants per unit area in the bottom portion.

公开(公告)号：US20240079436A1

公开(公告)日：2024-03-07

申请号：US18388882

申请日：2023-11-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KOOK TAE KIM ,  Ju-Eun Kim ,  Miseon Park ,  Jaewoong Lee ,  Soojin Hong

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/1463 ,  H01L27/14621

Abstract: An image sensor including a substrate having first and second surfaces that are opposite to each other. The substrate includes unit pixel regions having photoelectric conversion regions. A semiconductor pattern is disposed in a first trench defined in the substrate and defines the unit pixel regions. The semiconductor pattern includes a first semiconductor pattern and a second semiconductor pattern disposed on the first semiconductor pattern. A back-side insulating layer covers the second surface of the substrate. The first semiconductor pattern includes a side portion extended along an inner side surface of the first trench and a bottom portion connected to the side portion and disposed closer to the second surface of the substrate than the side portion. The second semiconductor pattern extends toward the second surface of the substrate and is spaced apart from the back-side insulating layer with the bottom portion of the first semiconductor pattern interposed therebetween.

公开(公告)号：US12243891B2

公开(公告)日：2025-03-04

申请号：US17518756

申请日：2021-11-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kook Tae Kim ,  Miseon Park ,  Soojin Hong

IPC: H01L27/146

Abstract: An image sensor includes a substrate including a first surface, a second surface opposite to the first surface, and unit pixels, a deep device isolation portion disposed in the substrate to isolate the unit pixels from each other, and a transfer gate disposed on the first surface and in each of the unit pixels. The deep device isolation portion includes a first conductive pattern extending from the first surface toward the second surface, a first insulating pattern interposed between the first conductive pattern and the substrate, a second conductive pattern extending from the second surface toward the first conductive pattern, and a first fixed charge layer interposed between the second conductive pattern and the substrate.

公开(公告)号：US12211880B2

公开(公告)日：2025-01-28

申请号：US18388882

申请日：2023-11-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kook Tae Kim ,  Ju-Eun Kim ,  Miseon Park ,  Jaewoong Lee ,  Soojin Hong

IPC: H01L27/146

Abstract: An image sensor including a substrate having first and second surfaces that are opposite to each other. The substrate includes unit pixel regions having photoelectric conversion regions. A semiconductor pattern is disposed in a first trench defined in the substrate and defines the unit pixel regions. The semiconductor pattern includes a first semiconductor pattern and a second semiconductor pattern disposed on the first semiconductor pattern. A back-side insulating layer covers the second surface of the substrate. The first semiconductor pattern includes a side portion extended along an inner side surface of the first trench and a bottom portion connected to the side portion and disposed closer to the second surface of the substrate than the side portion. The second semiconductor pattern extends toward the second surface of the substrate and is spaced apart from the back-side insulating layer with the bottom portion of the first semiconductor pattern interposed therebetween.

公开(公告)号：US20230131769A1

公开(公告)日：2023-04-27

申请号：US17881862

申请日：2022-08-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kook Tae Kim ,  Jingyun Kim ,  Jonghyeon Noh ,  Miseon Park ,  Jaewoong Lee

IPC: H01L27/146

Abstract: An image sensor includes: a substrate including a plurality of pixel regions, a first surface and a second surface opposite to the first surface; and a deep device isolation pattern disposed between adjacent pixel regioas of the phirality of pixel regions and penetrating the substrate, wherein the deep deice isolation pattern includes: a semiconductor pattern extended from the second surface toward the first surface; and sidewall insulating patterns interposed between the semiconductor pattern and the substrate, wherein the semiconductor pattern includes sidewall portions and a filling portion, wherein the sidewall portions are provided adjacent to the sidewall insulating patterns, respectively, wherein the filling portion is provided between the sidewall portions, and wherein top surfaces of the sidewall portions are located at a height higher than a top surface of the filling portion,

公开(公告)号：US09728644B2

公开(公告)日：2017-08-08

申请号：US15093892

申请日：2016-04-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-Suk Tak ,  Jongryeol Yoo ,  Hyun Jung Lee ,  Miseon Park ,  Bonyoung Koo ,  Sunjung Kim

IPC: H01L29/00 ,  H01L29/78 ,  H01L29/08 ,  H01L29/66 ,  H01L29/165

CPC classification number: H01L29/7851 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/7848 ,  H01L29/7849

Abstract: A semiconductor device includes a fin structure on a substrate and extending in a first direction, a gate electrode crossing over the fin structure, source/drain regions on the fin structure at opposite sides of the gate electrode, and a barrier layer between the fin structure and each of the source/drain regions. The fin structure includes a material having a lattice constant different from that of the substrate, the fin structure, the source/drain regions, and the barrier layer include germanium, and a germanium concentration in the barrier layer is greater than that in the fin structure and less than a maximum germanium concentration in each of the source/drain regions.