公开(公告)号：US12094907B2

公开(公告)日：2024-09-17

申请号：US18133769

申请日：2023-04-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jingyun Kim

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14616 ,  H01L27/14643

Abstract: An image sensor includes a semiconductor substrate of first conductivity type having first and second surfaces and including pixel regions, photoelectric conversion regions of second conductivity type respectively provided in the pixel regions, and a pixel isolation structure disposed in the semiconductor substrate to define the pixel regions and surrounding each of the photoelectric conversion regions. The pixel isolation structure includes a semiconductor pattern extending from the first surface to the second surface of the semiconductor substrate, a sidewall insulating pattern between a sidewall of the semiconductor pattern and the semiconductor substrate, and a dopant region in at least a portion of the semiconductor pattern.

公开(公告)号：US20200381464A1

公开(公告)日：2020-12-03

申请号：US16998202

申请日：2020-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungi Hong ,  Kook Tae Kim ,  Jingyun Kim ,  Soojin Hong

IPC: H01L27/146

Abstract: Image sensors are provided. An image sensor includes a substrate including a plurality of pixel areas. The substrate has a first surface and a second surface that is opposite the first surface. The image sensor includes a deep pixel isolation region extending from the second surface of the substrate toward the first surface of the substrate and separating the plurality of pixel areas from each other. The image sensor includes an amorphous region adjacent a sidewall of the deep pixel isolation region. Moreover, the image sensor includes an electron suppression region between the amorphous region and the sidewall of the deep pixel isolation region.

公开(公告)号：US11819860B2

公开(公告)日：2023-11-21

申请号：US16757973

申请日：2018-12-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jingyun Kim ,  Kyuho Shin ,  Jaeyoul Jeong

IPC: B03C3/10 ,  F24F8/90 ,  F24F8/192 ,  B03C3/74 ,  B03C3/86 ,  F24F8/00

CPC classification number: B03C3/10 ,  B03C3/743 ,  B03C3/86 ,  F24F8/00 ,  F24F8/194 ,  F24F8/90

Abstract: A belt-type electric dust collection device capable of automatic cleaning includes a dust collection belt including a plurality of flat parts spaced apart at a predetermined distance, and a plurality of first bent parts and second bent parts formed at both ends of the plurality of flat parts. A plurality of first rollers are provided in a line at the plurality of first bent parts of the dust collection belt, to support and guide the dust collection belt. A plurality of second rollers are provided in a line at the plurality of second bent parts of the dust collection belt. A plurality of electrode plates are provided between the plurality of flat parts of the dust collection belt. A belt cleaning part is provided at one side of the dust collection belt, and a driving part is provided to move the dust collection belt.

公开(公告)号：US20230131769A1

公开(公告)日：2023-04-27

申请号：US17881862

申请日：2022-08-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kook Tae Kim ,  Jingyun Kim ,  Jonghyeon Noh ,  Miseon Park ,  Jaewoong Lee

IPC: H01L27/146

Abstract: An image sensor includes: a substrate including a plurality of pixel regions, a first surface and a second surface opposite to the first surface; and a deep device isolation pattern disposed between adjacent pixel regioas of the phirality of pixel regions and penetrating the substrate, wherein the deep deice isolation pattern includes: a semiconductor pattern extended from the second surface toward the first surface; and sidewall insulating patterns interposed between the semiconductor pattern and the substrate, wherein the semiconductor pattern includes sidewall portions and a filling portion, wherein the sidewall portions are provided adjacent to the sidewall insulating patterns, respectively, wherein the filling portion is provided between the sidewall portions, and wherein top surfaces of the sidewall portions are located at a height higher than a top surface of the filling portion,

公开(公告)号：US20200111821A1

公开(公告)日：2020-04-09

申请号：US16400279

申请日：2019-05-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungi Hong ,  Kook Tae Kim ,  Jingyun Kim ,  Soojin Hong

IPC: H01L27/146

Abstract: Image sensors are provided. An image sensor includes a substrate including a plurality of pixel areas. The substrate has a first surface and a second surface that is opposite the first surface. The image sensor includes a deep pixel isolation region extending from the second surface of the substrate toward the first surface of the substrate and separating the plurality of pixel areas from each other. The image sensor includes an amorphous region adjacent a sidewall of the deep pixel isolation region. Moreover, the image sensor includes an electron suppression region between the amorphous region and the sidewall of the deep pixel isolation region.

公开(公告)号：US12302660B2

公开(公告)日：2025-05-13

申请号：US17952479

申请日：2022-09-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jonghyeon Noh ,  Kook Tae Kim ,  Jingyun Kim ,  Miseon Park ,  Jaewoong Lee

IPC: H01L27/146 ,  H10F39/00

Abstract: An image sensor includes: a substrate including a first surface and a second surface; an interlayer dielectric layer covering the first surface; and a pixel separation part disposed its the substrate, wherein the pixel separation part divides a plurality of unit pixels from each other, wherein the pixel separation part includes: a conductive structure that extends from the first surface toward the second surface; a first reflective structure disposed between the conductive structure and the substrate; and a front-side buried pattern disposed between the conductive structure and the interlayer dielectric layer and between the first reflective structure and the interlayer dielectric layer, wherein the first reflective structure includes first reflective liners and second reflective liners that are alternately disposed in a direction toward the conductive structure from the substrate, wherein a refractive index of the first reflective liners is different from a refractive index of the second reflective liners.

公开(公告)号：US11121163B2

公开(公告)日：2021-09-14

申请号：US16677710

申请日：2019-11-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jingyun Kim

IPC: H01L27/146

Abstract: An image sensor includes a semiconductor substrate of first conductivity type having first and second surfaces and including pixel regions, photoelectric conversion regions of second conductivity type respectively provided in the pixel regions, and a pixel isolation structure disposed in the semiconductor substrate to define the pixel regions and surrounding each of the photoelectric conversion regions. The pixel isolation structure includes a semiconductor pattern extending from the first surface to the second surface of the semiconductor substrate, a sidewall insulating pattern between a sidewall of the semiconductor pattern and the semiconductor substrate, and a dopant region in at least a portion of the semiconductor pattern.

公开(公告)号：US12302661B2

公开(公告)日：2025-05-13

申请号：US17980192

申请日：2022-11-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jonghyeon Noh ,  Kook Tae Kim ,  Jingyun Kim ,  Miseon Park ,  Jaewoong Lee

IPC: H01L27/146 ,  H10F39/00

Abstract: An image sensor includes: a substrate including a first surface and a second surface; an interlayer dielectric layer covering the first surface; and a pixel separation part disposed its the substrate, wherein the pixel separation part divides a plurality of unit pixels from each other, wherein the pixel separation part includes: a conductive structure that extends from the first surface toward the second surface; a first reflective structure disposed between the conductive structure and the substrate; and a front-side buried pattern disposed between the conductive structure and the interlayer dielectric layer and between the first reflective structure and the interlayer dielectric layer, wherein the first reflective structure includes first reflective liners and second reflective liners that are alternately disposed in a direction toward the conductive structure from the substrate, wherein a refractive index of the first reflective liners is different from a refractive index of the second reflective liners.

公开(公告)号：USRE50280E1

公开(公告)日：2025-01-21

申请号：US17840850

申请日：2022-06-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jingyun Kim ,  Myoungbum Lee ,  Kihyun Hwang

IPC: H10B43/27 ,  H10B41/10 ,  H10B41/27 ,  H10B43/10

Abstract: Semiconductor memory devices and methods of forming semiconductor memory devices are provided. The methods may include forming insulation layers and cell gate layers that are alternately stacked on a substrate, forming an opening by successively patterning through the cell gate layers and the insulation layers, and forming selectively conductive barriers on sidewalls of the cell gate layers in the opening.

公开(公告)号：US20250015114A1

公开(公告)日：2025-01-09

申请号：US18431548

申请日：2024-02-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghoon LEE ,  Jingyun Kim ,  Seunghyun Lee ,  Soojin Hong

IPC: H01L27/146

Abstract: An image sensor according to an embodiment includes a substrate having first and second surfaces facing each other, separated by a deep trench, and including a plurality of pixel regions; a plurality of photoelectric conversion regions disposed in the plurality of pixel regions; a blocking region disposed in the plurality of pixel regions; and a plurality of color filters and a plurality of micro lenses disposed on the second surface of the substrate. The blocking region is disposed adjacent to the second surface of the substrate, the blocking region includes a first element of a first type, and the plurality of photoelectric conversion regions include a second element of a second type different from the first type. The concentration of the first element on the second surface of the substrate in the blocking region is about 1E16/cm3 to about 1E18/cm3.