公开(公告)号：US20200381464A1

公开(公告)日：2020-12-03

申请号：US16998202

申请日：2020-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungi Hong ,  Kook Tae Kim ,  Jingyun Kim ,  Soojin Hong

IPC: H01L27/146

Abstract: Image sensors are provided. An image sensor includes a substrate including a plurality of pixel areas. The substrate has a first surface and a second surface that is opposite the first surface. The image sensor includes a deep pixel isolation region extending from the second surface of the substrate toward the first surface of the substrate and separating the plurality of pixel areas from each other. The image sensor includes an amorphous region adjacent a sidewall of the deep pixel isolation region. Moreover, the image sensor includes an electron suppression region between the amorphous region and the sidewall of the deep pixel isolation region.

公开(公告)号：US12272705B2

公开(公告)日：2025-04-08

申请号：US17239291

申请日：2021-04-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kook Tae Kim ,  Chang Kyu Lee ,  Dongmo Im ,  Ju-eun Kim ,  Miseon Park ,  Jungim Choe ,  Soojin Hong

IPC: H01L31/062 ,  H10F39/00

Abstract: An image sensor is provided and may include a semiconductor substrate having a surface and including trench, the trench extending from the surface into the semiconductor substrate, an insulating pattern provided in the trench; and a doped region in the semiconductor substrate and on the insulating patterns. The doped region includes a side portion on a side surface of the insulating pattern, and a bottom portion on a bottom surface of the insulating pattern. A thickness of the side portion of the doped region is from 85% to 115% of a thickness of the bottom portion of the doped region, and a number of dopants per unit area in the side portion of the doped region is from 85% to 115% of a number of dopants per unit area in the bottom portion.

公开(公告)号：US20240079436A1

公开(公告)日：2024-03-07

申请号：US18388882

申请日：2023-11-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KOOK TAE KIM ,  Ju-Eun Kim ,  Miseon Park ,  Jaewoong Lee ,  Soojin Hong

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/1463 ,  H01L27/14621

Abstract: An image sensor including a substrate having first and second surfaces that are opposite to each other. The substrate includes unit pixel regions having photoelectric conversion regions. A semiconductor pattern is disposed in a first trench defined in the substrate and defines the unit pixel regions. The semiconductor pattern includes a first semiconductor pattern and a second semiconductor pattern disposed on the first semiconductor pattern. A back-side insulating layer covers the second surface of the substrate. The first semiconductor pattern includes a side portion extended along an inner side surface of the first trench and a bottom portion connected to the side portion and disposed closer to the second surface of the substrate than the side portion. The second semiconductor pattern extends toward the second surface of the substrate and is spaced apart from the back-side insulating layer with the bottom portion of the first semiconductor pattern interposed therebetween.

公开(公告)号：US12243891B2

公开(公告)日：2025-03-04

申请号：US17518756

申请日：2021-11-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kook Tae Kim ,  Miseon Park ,  Soojin Hong

IPC: H01L27/146

Abstract: An image sensor includes a substrate including a first surface, a second surface opposite to the first surface, and unit pixels, a deep device isolation portion disposed in the substrate to isolate the unit pixels from each other, and a transfer gate disposed on the first surface and in each of the unit pixels. The deep device isolation portion includes a first conductive pattern extending from the first surface toward the second surface, a first insulating pattern interposed between the first conductive pattern and the substrate, a second conductive pattern extending from the second surface toward the first conductive pattern, and a first fixed charge layer interposed between the second conductive pattern and the substrate.

公开(公告)号：US12211880B2

公开(公告)日：2025-01-28

申请号：US18388882

申请日：2023-11-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kook Tae Kim ,  Ju-Eun Kim ,  Miseon Park ,  Jaewoong Lee ,  Soojin Hong

IPC: H01L27/146

Abstract: An image sensor including a substrate having first and second surfaces that are opposite to each other. The substrate includes unit pixel regions having photoelectric conversion regions. A semiconductor pattern is disposed in a first trench defined in the substrate and defines the unit pixel regions. The semiconductor pattern includes a first semiconductor pattern and a second semiconductor pattern disposed on the first semiconductor pattern. A back-side insulating layer covers the second surface of the substrate. The first semiconductor pattern includes a side portion extended along an inner side surface of the first trench and a bottom portion connected to the side portion and disposed closer to the second surface of the substrate than the side portion. The second semiconductor pattern extends toward the second surface of the substrate and is spaced apart from the back-side insulating layer with the bottom portion of the first semiconductor pattern interposed therebetween.

公开(公告)号：US10822694B2

公开(公告)日：2020-11-03

申请号：US16104311

申请日：2018-08-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sukjin Chung ,  Bongjin Kuh ,  Kook Tae Kim ,  In-Sun Yi ,  Soojin Hong

IPC: C23C16/44 ,  C23C16/458 ,  C23C16/455

Abstract: Disclosed are a substrate processing apparatus and a method of cleaning the apparatus. The apparatus includes a process chamber, a support unit in the process chamber and configured to support a substrate, and a gas injection unit in the process chamber. The gas injection unit includes a first injection portion configured to inject a source gas, a second injection portion facing the first injection portion and configured to inject a reaction gas that reacts with the source gas, and a third injection portion configured to inject a cleaning gas that removes a reactant produced from the source gas and the reaction gas.

公开(公告)号：US11837621B2

公开(公告)日：2023-12-05

申请号：US17182364

申请日：2021-02-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kook Tae Kim ,  Ju-Eun Kim ,  Miseon Park ,  Jaewoong Lee ,  Soojin Hong

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/1463 ,  H01L27/14621

Abstract: An image sensor including a substrate having first and second surfaces that are opposite to each other. The substrate includes unit pixel regions having photoelectric conversion regions. A semiconductor pattern is disposed in a first trench defined in the substrate and defines the unit pixel regions. The semiconductor pattern includes a first semiconductor pattern and a second semiconductor pattern disposed on the first semiconductor pattern. A back-side insulating layer covers the second surface of the substrate. The first semiconductor pattern includes a side portion extended along an inner side surface of the first trench and a bottom portion connected to the side portion and disposed closer to the second surface of the substrate than the side portion. The second semiconductor pattern extends toward the second surface of the substrate and is spaced apart from the back-side insulating layer with the bottom portion of the first semiconductor pattern interposed therebetween.

公开(公告)号：US20200111821A1

公开(公告)日：2020-04-09

申请号：US16400279

申请日：2019-05-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungi Hong ,  Kook Tae Kim ,  Jingyun Kim ,  Soojin Hong

IPC: H01L27/146

Abstract: Image sensors are provided. An image sensor includes a substrate including a plurality of pixel areas. The substrate has a first surface and a second surface that is opposite the first surface. The image sensor includes a deep pixel isolation region extending from the second surface of the substrate toward the first surface of the substrate and separating the plurality of pixel areas from each other. The image sensor includes an amorphous region adjacent a sidewall of the deep pixel isolation region. Moreover, the image sensor includes an electron suppression region between the amorphous region and the sidewall of the deep pixel isolation region.

公开(公告)号：US10115759B2

公开(公告)日：2018-10-30

申请号：US15647664

申请日：2017-07-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngbin Lee ,  GukHyon Yon ,  Soojin Hong

IPC: H01L27/14 ,  H01L27/146

Abstract: A complementary metal-oxide semiconductor (CMOS) image sensor includes a device isolation layer provided in a trench of a substrate, the device isolation layer defining a pixel; and a photoelectric conversion device provided in the pixel. The device isolation layer includes a conductive layer, a tunneling layer interposed between the conductive layer and the substrate, and a trap layer interposed between the tunneling layer and the conductive layer.

公开(公告)号：US20250015114A1

公开(公告)日：2025-01-09

申请号：US18431548

申请日：2024-02-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghoon LEE ,  Jingyun Kim ,  Seunghyun Lee ,  Soojin Hong

IPC: H01L27/146

Abstract: An image sensor according to an embodiment includes a substrate having first and second surfaces facing each other, separated by a deep trench, and including a plurality of pixel regions; a plurality of photoelectric conversion regions disposed in the plurality of pixel regions; a blocking region disposed in the plurality of pixel regions; and a plurality of color filters and a plurality of micro lenses disposed on the second surface of the substrate. The blocking region is disposed adjacent to the second surface of the substrate, the blocking region includes a first element of a first type, and the plurality of photoelectric conversion regions include a second element of a second type different from the first type. The concentration of the first element on the second surface of the substrate in the blocking region is about 1E16/cm3 to about 1E18/cm3.