公开(公告)号：US20250126916A1

公开(公告)日：2025-04-17

申请号：US18650969

申请日：2024-04-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KOOK TAE KIM ,  JINGYUN KIM ,  MINKYUNG LEE

IPC: H01L27/146

Abstract: An image sensor is provided. The image sensor includes: a plurality of pixels; a semiconductor substrate including a first surface and a second surface opposing the first surface; a device isolation layer provided in a trench penetrating through the first surface and the second surface of the semiconductor substrate, and separating the plurality of pixels from each other; and a microlens provided on the second surface. The device isolation layer includes: a buried insulating pattern penetrating through the first surface and the second surface; an insulating liner between the buried insulating pattern and the semiconductor substrate; a conductive liner between the insulating liner and the buried insulating pattern; and a buried conductive pattern provided on at least a portion of the buried insulating pattern and contacting the conductive liner.

公开(公告)号：US20220013566A1

公开(公告)日：2022-01-13

申请号：US17182364

申请日：2021-02-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KOOK TAE KIM ,  JU-EUN KIM ,  MISEON PARK ,  JAEWOONG LEE ,  SOOJIN HONG

IPC: H01L27/146

Abstract: An image sensor including a substrate having first and second surfaces that are opposite to each other. The substrate includes unit pixel regions having photoelectric conversion regions. A semiconductor pattern is disposed in a first trench defined in the substrate and defines the unit pixel regions. The semiconductor pattern includes a first semiconductor pattern and a second semiconductor pattern disposed on the first semiconductor pattern. A back-side insulating layer covers the second surface of the substrate. The first semiconductor pattern includes a side portion extended along an inner side surface of the first trench and a bottom portion connected to the side portion and disposed closer to the second surface of the substrate than the side portion. The second semiconductor pattern extends toward the second surface of the substrate and is spaced apart from the back-side insulating layer with the bottom portion of the first semiconductor pattern interposed therebetween.

公开(公告)号：US20240079436A1

公开(公告)日：2024-03-07

申请号：US18388882

申请日：2023-11-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KOOK TAE KIM ,  Ju-Eun Kim ,  Miseon Park ,  Jaewoong Lee ,  Soojin Hong

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/1463 ,  H01L27/14621

Abstract: An image sensor including a substrate having first and second surfaces that are opposite to each other. The substrate includes unit pixel regions having photoelectric conversion regions. A semiconductor pattern is disposed in a first trench defined in the substrate and defines the unit pixel regions. The semiconductor pattern includes a first semiconductor pattern and a second semiconductor pattern disposed on the first semiconductor pattern. A back-side insulating layer covers the second surface of the substrate. The first semiconductor pattern includes a side portion extended along an inner side surface of the first trench and a bottom portion connected to the side portion and disposed closer to the second surface of the substrate than the side portion. The second semiconductor pattern extends toward the second surface of the substrate and is spaced apart from the back-side insulating layer with the bottom portion of the first semiconductor pattern interposed therebetween.

公开(公告)号：US20230170372A1

公开(公告)日：2023-06-01

申请号：US17952479

申请日：2022-09-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jonghyeon NOH ,  KOOK TAE KIM ,  JINGYUN KIM ,  MISEON PARK ,  JAEWOONG LEE

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14629 ,  H01L27/14627 ,  H01L27/14621 ,  H01L27/14636

Abstract: An image sensor includes: a substrate including a first surface and a second surface; an interlayer dielectric layer covering the first surface; and a pixel separation part disposed its the substrate, wherein the pixel separation part divides a. plurality of unit pixels from each other, wherein the pixel separation part includes: a conductive structure that extends from the first surface toward the second surface; a first reflective structure disposed between the conductive structure and the substrate; and a front-side buried pattern disposed between the conductive structure and the interlayer dielectric layer and between the first reflective structure and the interlayer dielectric layer, wherein the first reflective structure includes first reflective liners and second reflective liners that are alternately disposed in a direction toward the conductive structure from the substrate, wherein a refractive index of the first reflective liners is different from a refractive index of the second reflective liners.

公开(公告)号：US20220310675A1

公开(公告)日：2022-09-29

申请号：US17667962

申请日：2022-02-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KOOK TAE KIM ,  MISEON PARK ,  JAESUNG HUR

IPC: H01L27/146

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a first pixel isolation structure disposed in a first trench which vertically extends from the first surface of the semiconductor substrate and defines a plurality of pixel regions, and a second pixel isolation structure disposed in a second trench vertically extending from the second surface of the semiconductor substrate. The second pixel isolation structure overlaps the first pixel isolation structure. The first pixel isolation structure includes a liner semiconductor pattern defining a gap region in the first trench, the liner semiconductor pattern including sidewall portions and a bottom portion connecting the sidewall portions, a liner insulating pattern disposed between the liner semiconductor pattern and the semiconductor substrate, and a capping insulating pattern disposed in the gap region of the liner semiconductor pattern.