公开(公告)号：US20180218966A1

公开(公告)日：2018-08-02

申请号：US15936019

申请日：2018-03-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Il Choi ,  KWANG-JIN MOON ,  BYUNG-LYUL PARK ,  JIN-HO AN ,  ATSUSHI FUJISAKI

IPC: H01L23/48 ,  H01L23/00 ,  H01L21/768 ,  H01L25/18 ,  H01L25/065 ,  H01L23/532

CPC classification number: H01L23/481 ,  H01L21/76898 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/03618 ,  H01L2224/0401 ,  H01L2224/05018 ,  H01L2224/05025 ,  H01L2224/05027 ,  H01L2224/05155 ,  H01L2224/05546 ,  H01L2224/05557 ,  H01L2224/05559 ,  H01L2224/05564 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05684 ,  H01L2224/06181 ,  H01L2224/13023 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/16013 ,  H01L2224/16113 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16147 ,  H01L2224/16148 ,  H01L2224/16227 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/01047

Abstract: A semiconductor device can include a substrate that has a surface. A via structure can extend through the substrate toward the surface of the substrate, where the via structure includes an upper surface. A pad structure can be on the surface of the substrate, where the pad structure can include a lower surface having at least one protrusion that is configured to protrude toward the upper surface of the via structure.

公开(公告)号：US20140217559A1

公开(公告)日：2014-08-07

申请号：US14161034

申请日：2014-01-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： JU-IL CHOI ,  SU-KYOUNG KIM ,  KUN-SANG PARK ,  SEONG-MIN SON ,  JIN-HO AN ,  DO-SUN LEE

IPC: H01L23/522

CPC classification number: H01L23/5226 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/53295 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/14 ,  H01L25/0657 ,  H01L2224/02351 ,  H01L2224/03462 ,  H01L2224/0384 ,  H01L2224/0401 ,  H01L2224/05547 ,  H01L2224/05548 ,  H01L2224/05556 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/13 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2224/13027 ,  H01L2224/131 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/1403 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00

Abstract: A semiconductor device is provided having an insulating layer on a semiconductor substrate. The insulating layer and the semiconductor substrate define a through hole penetrating the semiconductor substrate and the insulating layer. A through electrode is provided in the through hole. A spacer is provided between the semiconductor substrate and the through electrode. An interconnection in continuity with the through electrode is provided on the insulating layer. A barrier layer covering a side and a bottom of the interconnection and a side of the through electrode is provided and the barrier layer is formed in one body.

Abstract translation: 提供了半导体器件，其在半导体衬底上具有绝缘层。 绝缘层和半导体衬底限定穿透半导体衬底和绝缘层的通孔。 通孔中设置有贯通电极。 在半导体衬底和贯通电极之间设置间隔物。 在绝缘层上设置与通孔电连接的互连。 设置覆盖互连的一侧和底部的阻挡层和通孔的一侧，并且阻挡层形成在一体中。