公开(公告)号：US09443881B2

公开(公告)日：2016-09-13

申请号：US14518278

申请日：2014-10-20

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jean-Ho Song ,  Shin-Il Choi ,  Sun-Young Hong ,  Shi-Yul Kim ,  Ki-Yeup Lee ,  Jae-Hyoung Youn ,  Sung-Ryul Kim ,  O-Sung Seo ,  Yang-Ho Bae ,  Jong-Hyun Choung ,  Dong-Ju Yang ,  Bong-Kyun Kim ,  Hwa-Yeul Oh ,  Pil-Soon Hong ,  Byeong-Beom Kim ,  Je-Hyeong Park ,  Yu-Gwang Jeong ,  Jong-In Kim ,  Nam-Seok Suh

IPC: H01L29/04 ,  H01L27/12 ,  H01L29/423 ,  H01L29/45 ,  H01L29/786

CPC classification number: H01L27/124 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1288 ,  H01L29/42368 ,  H01L29/458 ,  H01L29/78669

Abstract: A thin film transistor array panel includes a gate line, a gate insulating layer that covers the gate line, a semiconductor layer that is disposed on the gate insulating layer, a data line and drain electrode that are disposed on the semiconductor layer, a passivation layer that covers the data line and drain electrode and has a contact hole that exposes a portion of the drain electrode, and a pixel electrode that is electrically connected to the drain electrode through the contact hole. The data line and drain electrode each have a double layer that includes a lower layer of titanium and an upper layer of copper, and the lower layer is wider than the upper layer, and the lower layer has a region that is exposed. The gate insulating layer may have a step shape.

Abstract translation: 薄膜晶体管阵列面板包括栅极线，覆盖栅极线的栅极绝缘层，设置在栅极绝缘层上的半导体层，设置在半导体层上的数据线和漏极，钝化层 覆盖数据线和漏电极，并且具有露出漏电极的一部分的接触孔，以及通过接触孔与漏电极电连接的像素电极。 数据线和漏极各自具有包括钛的下层和铜的上层的双层，下层比上层宽，下层具有暴露的区域。 栅极绝缘层可以具有台阶形状。

公开(公告)号：US20150053984A1

公开(公告)日：2015-02-26

申请号：US14518278

申请日：2014-10-20

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： JEAN-HO SONG ,  Shin-Il Choi ,  Sun-Young Hong ,  Shi-Yul Kim ,  Ki-Yeup Lee ,  Jae-Hyoung Youn ,  Sung-Ryul Kim ,  O-Sung Seo ,  Yang-Ho Bae ,  Jong-Hyun Choung ,  Dong-Ju Yang ,  Bong-Kyun Kim ,  Hwa-Yeul Oh ,  Pil-Soon Hong ,  Byeong-Beom Kim ,  Je-Hyeong Park ,  Yu-Gwang Jeong ,  Jong-In Kim ,  Nam-Seok Suh

IPC: H01L27/12 ,  H01L29/45 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L27/124 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1288 ,  H01L29/42368 ,  H01L29/458 ,  H01L29/78669

Abstract: A thin film transistor array panel includes a gate line, a gate insulating layer that covers the gate line, a semiconductor layer that is disposed on the gate insulating layer, a data line and drain electrode that are disposed on the semiconductor layer, a passivation layer that covers the data line and drain electrode and has a contact hole that exposes a portion of the drain electrode, and a pixel electrode that is electrically connected to the drain electrode through the contact hole. The data line and drain electrode each have a double layer that includes a lower layer of titanium and an upper layer of copper, and the lower layer is wider than the upper layer, and the lower layer has a region that is exposed. The gate insulating layer may have a step shape.

Abstract translation: 薄膜晶体管阵列面板包括栅极线，覆盖栅极线的栅极绝缘层，设置在栅极绝缘层上的半导体层，设置在半导体层上的数据线和漏极，钝化层 覆盖数据线和漏电极，并且具有露出漏电极的一部分的接触孔，以及通过接触孔与漏电极电连接的像素电极。 数据线和漏极各自具有包括钛的下层和铜的上层的双层，下层比上层宽，下层具有暴露的区域。 栅极绝缘层可以具有台阶形状。

公开(公告)号：US09934737B2

公开(公告)日：2018-04-03

申请号：US14677225

申请日：2015-04-02

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyung-Suk Jung ,  Sung-Ryul Kim ,  Woo-Sung Sohn

IPC: G09G5/10 ,  G09G3/36

CPC classification number: G09G3/3648 ,  G09G3/3611 ,  G09G3/3688 ,  G09G3/3696 ,  G09G2300/0876 ,  G09G2310/0275 ,  G09G2310/0281 ,  G09G2310/08 ,  G09G2320/0209 ,  G09G2320/0242 ,  G09G2320/041 ,  G09G2330/028

Abstract: A display apparatus includes a display panel comprising a plurality of pixels, each of the pixels comprising a thin film transistor connected to a gate line and a data line and a display element connected to the thin film transistor, a driving voltage generator configured to generate a gate-on voltage and a plurality of gate-off voltages, a timing controller configured to divide an initial driving period into a plurality of setting periods and output a gate-off voltage corresponding to each of the setting periods, and a gate driver circuit configured to generate a gate signal using the gate-on voltage and the gate-off voltage corresponding to a setting period and output the gate signal to the gate line.

公开(公告)号：US08735893B2

公开(公告)日：2014-05-27

申请号：US13872605

申请日：2013-04-29

Applicant: Samsung Display Co., Ltd.

Inventor： Dae-Cheol Kim ,  Sung-Ryul Kim ,  Yung-Jong Yeo ,  Hong-Kee Chin ,  Ki-Hun Jeong

IPC: H01L29/04

CPC classification number: G02F1/1368 ,  G02F1/13338 ,  G02F2001/13312 ,  H01L31/1136 ,  H01L31/12

Abstract: A display device includes an infrared sensing transistor and a visible sensing transistor. The visible sensing transistor includes a semiconductor on a substrate; an ohmic contact on the semiconductor; an etch stopping layer on the ohmic contact; a source electrode and a drain electrode on the etch stopping layer; a passivation layer on the source electrode and the drain electrode; and a gate electrode on the passivation layer. The etch stopping layer may be composed of the same material as the source electrode and the drain electrode. The infrared sensing transistor is similar to the visible sensing transistor except the etch stopping layer is absent.

Abstract translation: 显示装置包括红外感测晶体管和可见感测晶体管。 可见感测晶体管包括在衬底上的半导体; 半导体上的欧姆接触; 在欧姆接触上的蚀刻停止层; 蚀刻停止层上的源电极和漏电极; 源电极和漏电极上的钝化层; 和钝化层上的栅电极。 蚀刻停止层可以由与源电极和漏电极相同的材料构成。 除了不存在蚀刻停止层之外，红外感测晶体管类似于可见感测晶体管。

公开(公告)号：US09128341B2

公开(公告)日：2015-09-08

申请号：US14251282

申请日：2014-04-11

Applicant: Samsung Display Co., Ltd.

Inventor： Dae-Cheol Kim ,  Sung-Ryul Kim ,  Yun-Jong Yeo ,  Hong-Kee Chin ,  Ki-Hun Jeong

IPC: H01L29/04 ,  G02F1/1368 ,  H01L31/113 ,  H01L31/12 ,  G02F1/1333 ,  G02F1/133

CPC classification number: G02F1/1368 ,  G02F1/13338 ,  G02F2001/13312 ,  H01L31/1136 ,  H01L31/12

Abstract: A display device includes an infrared sensing transistor and a visible sensing transistor. The visible sensing transistor includes a semiconductor on a substrate; an ohmic contact on the semiconductor; an etch stopping layer on the ohmic contact; a source electrode and a drain electrode on the etch stopping layer; a passivation layer on the source electrode and the drain electrode; and a gate electrode on the passivation layer. The etch stopping layer may be composed of the same material as the source electrode and the drain electrode. The infrared sensing transistor is similar to the visible sensing transistor except the etch stopping layer is absent.

Abstract translation: 显示装置包括红外感测晶体管和可见感测晶体管。 可见感测晶体管包括在衬底上的半导体; 半导体上的欧姆接触; 在欧姆接触上的蚀刻停止层; 蚀刻停止层上的源电极和漏电极; 源电极和漏电极上的钝化层; 和钝化层上的栅电极。 蚀刻停止层可以由与源电极和漏电极相同的材料构成。 除了不存在蚀刻停止层之外，红外感测晶体管类似于可见感测晶体管。

公开(公告)号：US08652886B2

公开(公告)日：2014-02-18

申请号：US13870053

申请日：2013-04-25

Applicant: Samsung Display Co., Ltd.

Inventor： Hyeong-Suk Yoo ,  Ho-Jun Lee ,  Sung-Ryul Kim ,  O-Sung Seo ,  Hong-Kee Chin

IPC: H01L21/00

CPC classification number: H01L27/1288 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1248

Abstract: A method of manufacturing a thin film transistor array substrate includes forming a gate pattern on a substrate, forming a gate insulating film on the substrate, forming a source/drain pattern and a semiconductor pattern on the substrate, forming first, second, and third passivation films successively on the substrate. Over the above multi-layered passivation film forming a first photoresist pattern including a first portion formed on part of the drain electrode and on the pixel region, and a second portion. The second portion is thicker than the first portion. Then, patterning the third passivation film using the first photoresist pattern, forming a second photoresist pattern by removing the first portion of the first photoresist pattern, forming a transparent electrode film on the substrate, removing the second photoresist pattern and the transparent electrode film disposed on the second photoresist pattern, and forming a transparent electrode pattern on the second passivation layer.

Abstract translation: 制造薄膜晶体管阵列基板的方法包括在基板上形成栅极图案，在基板上形成栅极绝缘膜，在基板上形成源/漏图案和半导体图案，形成第一，第二和第三钝化层 胶片依次在基材上。 在上述多层钝化膜上形成包括形成在漏电极的一部分上和在像素区域上的第一部分的第一光致抗蚀剂图案和第二部分。 第二部分比第一部分厚。 然后，使用第一光致抗蚀剂图案图案化第三钝化膜，通过去除第一光致抗蚀剂图案的第一部分形成第二光致抗蚀剂图案，在基板上形成透明电极膜，去除设置在第一光致抗蚀剂图案上的第二光致抗蚀剂图案和透明电极膜 第二光致抗蚀剂图案，并且在第二钝化层上形成透明电极图案。

公开(公告)号：US09389452B2

公开(公告)日：2016-07-12

申请号：US14065686

申请日：2013-10-29

Applicant: Samsung Display Co., Ltd.

Inventor： Sung-Jin Mun ,  Dae-Cheol Kim ,  Woong-Kwon Kim ,  Sung-Ryul Kim ,  Ki-Hun Jeong ,  Byeong-Hoon Cho ,  Jung-Suk Bang ,  Kun-Wook Han

IPC: G02F1/1333 ,  H01L27/32 ,  G02F1/1362 ,  H01L27/146 ,  G02F1/133 ,  G06F3/041 ,  G06F3/042

CPC classification number: G02F1/13338 ,  G02F1/136204 ,  G02F1/136209 ,  G02F2001/13312 ,  G02F2202/10 ,  G02F2203/11 ,  G06F3/0412 ,  G06F3/042 ,  G06F2203/04103 ,  H01L27/14678 ,  H01L27/323 ,  H01L2227/323

Abstract: A touch display apparatus includes a base substrate, a light blocking semiconductor pattern disposed on the base substrate and configured to block a visible light and transmit an infrared light, a sensing element disposed on the light blocking semiconductor pattern and configured to detect a touch position using an incident infrared light, a driving element configured to drive the sensing element, a signal line electrically connected with the sensing element or the driving element, and a wiring connecting part disposed under the signal line and including a same material as the light blocking semiconductor pattern.

Abstract translation: 一种触摸显示装置，包括基底基板，设置在基底基板上并被配置为阻挡可见光并透过红外光的光阻挡半导体图案;感光元件，设置在光阻半导体图案上，并被配置为使用 入射红外光，被配置为驱动感测元件的驱动元件，与感测元件或驱动元件电连接的信号线，以及布置在信号线下方并且包括与阻光半导体图案相同的材料的布线连接部 。

公开(公告)号：US20140218644A1

公开(公告)日：2014-08-07

申请号：US14251282

申请日：2014-04-11

Applicant: Samsung Display Co., Ltd.

Inventor： Dae-Cheol KIM ,  Sung-Ryul Kim ,  Yun-Jong Yeo ,  Hong-Kee Chin ,  Ki-Hun Jeong

IPC: G02F1/1368 ,  G02F1/1333

CPC classification number: G02F1/1368 ,  G02F1/13338 ,  G02F2001/13312 ,  H01L31/1136 ,  H01L31/12

Abstract: A display device includes an infrared sensing transistor and a visible sensing transistor. The visible sensing transistor includes a semiconductor on a substrate; an ohmic contact on the semiconductor; an etch stopping layer on the ohmic contact; a source electrode and a drain electrode on the etch stopping layer; a passivation layer on the source electrode and the drain electrode; and a gate electrode on the passivation layer. The etch stopping layer may be composed of the same material as the source electrode and the drain electrode. The infrared sensing transistor is similar to the visible sensing transistor except the etch stopping layer is absent.

Abstract translation: 显示装置包括红外感测晶体管和可见感测晶体管。 可见感测晶体管包括在衬底上的半导体; 半导体上的欧姆接触; 在欧姆接触上的蚀刻停止层; 蚀刻停止层上的源电极和漏电极; 源电极和漏电极上的钝化层; 和钝化层上的栅电极。 蚀刻停止层可以由与源电极和漏电极相同的材料构成。 除了不存在蚀刻停止层之外，红外感测晶体管类似于可见感测晶体管。