公开(公告)号：US20140247403A1

公开(公告)日：2014-09-04

申请号：US14065686

申请日：2013-10-29

Applicant: Samsung Display Co., Ltd.

Inventor： Sung-Jin MUN ,  Dae-Cheol KIM ,  Woong-Kwon KIM ,  Sung-Ryul KIM ,  Ki-Hun JEONG ,  Byeong-Hoon CHO ,  Jung-Suk Bang ,  Kun-Wook HAN

IPC: G02F1/1333 ,  H01L27/32 ,  H01L31/14

CPC classification number: G02F1/13338 ,  G02F1/136204 ,  G02F1/136209 ,  G02F2001/13312 ,  G02F2202/10 ,  G02F2203/11 ,  G06F3/0412 ,  G06F3/042 ,  G06F2203/04103 ,  H01L27/14678 ,  H01L27/323 ,  H01L2227/323

Abstract: A touch display apparatus includes a base substrate, a light blocking semiconductor pattern disposed on the base substrate and configured to block a visible light and transmit an infrared light, a sensing element disposed on the light blocking semiconductor pattern and configured to detect a touch position using an incident infrared light, a driving element configured to drive the sensing element, a signal line electrically connected with the sensing element or the driving element and extending in a direction, and a wiring connecting part disposed under the signal line and including a same material as the light blocking semiconductor pattern.

Abstract translation: 一种触摸显示装置，包括基底基板，设置在基底基板上并被配置为阻挡可见光并透过红外光的光阻挡半导体图案;感光元件，设置在光阻半导体图案上，并被配置为使用 入射红外光，被配置为驱动感测元件的驱动元件，与感测元件或驱动元件电连接并沿一个方向延伸的信号线，以及布置在信号线下方的布线连接部，并且包括与 阻光半导体图案。

公开(公告)号：US09389452B2

公开(公告)日：2016-07-12

申请号：US14065686

申请日：2013-10-29

Applicant: Samsung Display Co., Ltd.

Inventor： Sung-Jin Mun ,  Dae-Cheol Kim ,  Woong-Kwon Kim ,  Sung-Ryul Kim ,  Ki-Hun Jeong ,  Byeong-Hoon Cho ,  Jung-Suk Bang ,  Kun-Wook Han

IPC: G02F1/1333 ,  H01L27/32 ,  G02F1/1362 ,  H01L27/146 ,  G02F1/133 ,  G06F3/041 ,  G06F3/042

CPC classification number: G02F1/13338 ,  G02F1/136204 ,  G02F1/136209 ,  G02F2001/13312 ,  G02F2202/10 ,  G02F2203/11 ,  G06F3/0412 ,  G06F3/042 ,  G06F2203/04103 ,  H01L27/14678 ,  H01L27/323 ,  H01L2227/323

Abstract: A touch display apparatus includes a base substrate, a light blocking semiconductor pattern disposed on the base substrate and configured to block a visible light and transmit an infrared light, a sensing element disposed on the light blocking semiconductor pattern and configured to detect a touch position using an incident infrared light, a driving element configured to drive the sensing element, a signal line electrically connected with the sensing element or the driving element, and a wiring connecting part disposed under the signal line and including a same material as the light blocking semiconductor pattern.

Abstract translation: 一种触摸显示装置，包括基底基板，设置在基底基板上并被配置为阻挡可见光并透过红外光的光阻挡半导体图案;感光元件，设置在光阻半导体图案上，并被配置为使用 入射红外光，被配置为驱动感测元件的驱动元件，与感测元件或驱动元件电连接的信号线，以及布置在信号线下方并且包括与阻光半导体图案相同的材料的布线连接部 。

公开(公告)号：US20140175441A1

公开(公告)日：2014-06-26

申请号：US13927781

申请日：2013-06-26

Applicant: Samsung Display Co., Ltd.

Inventor： Hong-Kee CHIN ,  Yun Jong Yeo ,  Sang Gab Kim ,  Jung-Suk Bang ,  Byeong Hoon Cho

IPC: H01L27/12

CPC classification number: H01L27/1288 ,  H01L21/30604 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/32139 ,  H01L21/84 ,  H01L27/1218 ,  H01L27/1251 ,  H01L27/127 ,  H01L27/1446 ,  H01L31/03765 ,  H01L31/1136 ,  H01L31/204

Abstract: A thin film transistor array panel includes a substrate, an insulation layer, a first semiconductor, and a second semiconductor. The insulation layer is disposed on the substrate and includes a stepped portion. The first semiconductor is disposed on the insulation layer. The second semiconductor is disposed on the insulation layer and includes a semiconductor material different than the first semiconductor. The stepped portion is spaced apart from an edge of the first semiconductor.

Abstract translation: 薄膜晶体管阵列面板包括基板，绝缘层，第一半导体和第二半导体。 绝缘层设置在基板上并且包括台阶部分。 第一半导体设置在绝缘层上。 第二半导体设置在绝缘层上，并且包括与第一半导体不同的半导体材料。 台阶部分与第一半导体的边缘间隔开。

公开(公告)号：US09054266B2

公开(公告)日：2015-06-09

申请号：US14298766

申请日：2014-06-06

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Suk Won Jung ,  Byeong Hoon Cho ,  Sung Hoon Yang ,  Woong Kwon Kim ,  Sang Youn Han ,  Dae Cheol Kim ,  Ki-Hun Jeong ,  Kyung-Sook Jeon ,  Seung Mi Seo ,  Jung-Suk Bang ,  Kun-Wook Han

IPC: H01L33/50 ,  H01L31/18 ,  H01L29/423 ,  H01L29/786 ,  G02F1/1333 ,  G06F3/042 ,  G02F1/133

CPC classification number: H01L31/18 ,  G02F1/13338 ,  G02F2001/13312 ,  G06F3/042 ,  H01L29/42384 ,  H01L29/78633

Abstract: An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer.

Abstract translation: 根据本发明的示例性实施例的IR感测晶体管包括：形成在基板上的遮光层; 形成在所述遮光层上的栅极绝缘层; 形成在栅极绝缘层上的半导体; 形成在所述半导体上的一对欧姆接触构件; 源电极和漏电极，形成在各个欧姆接触元件上; 形成在源电极和漏电极上的钝化层; 以及形成在所述钝化层上的栅电极，其中所述栅极绝缘层基本上全部位于所述遮光层上。