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    Thin film transistor array substrate, method of manufacturing the same, and display apparatus including the same
    1.
    发明授权
    Thin film transistor array substrate, method of manufacturing the same, and display apparatus including the same 有权
    薄膜晶体管阵列基板及其制造方法以及包括该薄膜晶体管阵列基板的显示装置

    公开(公告)号：US09312279B2

    公开(公告)日：2016-04-12

    申请号：US14170202

    申请日：2014-01-31

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Myoung-Geun Cha ,  Yoon-Ho Khang ,  Hyun-Jae Na ,  Sang-Ho Park

    IPC: H01L21/00 ,  H01L27/12

    CPC classification number: H01L27/1225 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/127

    Abstract: A thin film transistor (TFT) array substrate includes a substrate, a gate electrode, a gate line, a first data line, and a second data line on the substrate, a gate insulating layer that covers the gate electrode and the gate line and includes a first opening that exposes a portion of the first data line and a second opening that exposes a portion of the second data line, an active layer disposed on the gate insulating layer so that at least one portion of the active layer overlaps the gate electrode, a drain electrode and a source electrode that extend from opposite sides of the active layer, a pixel electrode that extends from the drain electrode, and a connection wiring that extends from the source electrode, and connects the first data line to the second data line through the first and second openings of the gate insulating layer.

    Abstract translation: 薄膜晶体管（TFT）阵列基板包括在基板上的基板，栅电极，栅极线，第一数据线和第二数据线，覆盖栅电极和栅极线的栅极绝缘层， 暴露第一数据线的一部分的第一开口和暴露第二数据线的一部分的第二开口，设置在栅绝缘层上的有源层，使得有源层的至少一部分与栅电极重叠， 从有源层的相对侧延伸的漏电极和源电极，从漏极延伸的像素电极和从源电极延伸的连接布线，并且将第一数据线连接到第二数据线通过 栅极绝缘层的第一和第二开口。

    SWITCHING ELEMENT, DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    SWITCHING ELEMENT, DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
    开关元件，显示基板及其制造方法

    公开(公告)号：US20140145178A1

    公开(公告)日：2014-05-29

    申请号：US13838219

    申请日：2013-03-15

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： YONG-SU LEE ,  Su-Hyoung Kang ,  Yoon-Ho Khang ,  Hyun-Jae Na ,  Sang-Ho Park ,  Se-Hwan Yu ,  Myoung-Geun Cha

    IPC: H01L29/786 ,  H01L29/66

    CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

    Abstract: A switching element includes an active pattern including a channel portion, a source portion connected to the channel portion, and a drain portion connected to the channel portion, the source portion, a gate electrode overlapping the channel portion of the active pattern, a gate insulation layer disposed between the channel portion of the active pattern and the gate electrode, a source electrode disposed on the source portion of the active pattern to make ohmic contact with the source portion, and a drain electrode disposed on the drain portion of the active pattern to make ohmic contact with the drain portion. The drain portion and the channel portion of the active pattern include the same or substantially the same material.

    Abstract translation: 开关元件包括有源图形，其包括沟道部分，连接到沟道部分的源极部分和连接到沟道部分的漏极部分，源极部分，与有源图案的沟道部分重叠的栅极电极，栅极绝缘层 设置在有源图案的沟道部分和栅电极之间的层，设置在有源图案的源极部分上以与源极部分欧姆接触的源电极以及设置在有源图案的漏极部分上的漏电极， 与漏极部分欧姆接触。 有源图案的漏极部分和沟道部分包括相同或基本上相同的材料。

    Display substrate and method of manufacturing a display substrate
    3.
    发明授权
    Display substrate and method of manufacturing a display substrate 有权
    显示基板和显示基板的制造方法

    公开(公告)号：US09484362B2

    公开(公告)日：2016-11-01

    申请号：US14262761

    申请日：2014-04-27

    Applicant: Samsung Display Co., LTD.

    Inventor： Dae-Ho Kim ,  Hyun-Jae Na ,  Jae-Neung Kim ,  Yu-Gwang Jeong ,  Myoung-Geun Cha ,  Sang-Gab Kim

    IPC: H01L29/04 ,  H01L27/12 ,  H01L29/417

    CPC classification number: H01L27/1225 ,  H01L27/1244 ,  H01L27/1248 ,  H01L29/41733

    Abstract: A display substrate includes an active pattern, a gate electrode, a first insulation layer and a pixel electrode. The active pattern is disposed on a base substrate. The active pattern includes a metal oxide semiconductor. The gate electrode overlaps the active pattern. The first insulation layer covers the gate electrode and the active pattern, and a contact hole is defined in the first insulation layer. The pixel electrode is electrically connected to the active pattern via the contact hole penetrating the first insulation layer. A first angle defined by a bottom surface of the first insulation layer and a sidewall of the first insulation layer exposed by the contact hole is between about 30° and about 50°.

    Abstract translation: 显示基板包括有源图案，栅电极，第一绝缘层和像素电极。 有源图案设置在基底基板上。 有源图案包括金属氧化物半导体。 栅电极与有源图案重叠。 第一绝缘层覆盖栅电极和有源图案，并且在第一绝缘层中限定接触孔。 像素电极经由穿过第一绝缘层的接触孔电连接到有源图案。 由第一绝缘层的底表面和由接触孔露出的第一绝缘层的侧壁限定的第一角度在约30°至约50°之间。

    Switching element, display substrate and method of manufacturing the same
    4.
    发明授权
    Switching element, display substrate and method of manufacturing the same 有权
    开关元件，显示基板及其制造方法

    公开(公告)号：US08884286B2

    公开(公告)日：2014-11-11

    申请号：US13838219

    申请日：2013-03-15

    Applicant: Samsung Display Co., Ltd.

    Inventor： Yong-Su Lee ,  Su-Hyoung Kang ,  Yoon-Ho Khang ,  Hyun-Jae Na ,  Sang-Ho Park ,  Se-Hwan Yu ,  Myoung-Geun Cha

    IPC: H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L29/66

    CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

    Abstract: A switching element includes an active pattern including a channel portion, a source portion connected to the channel portion, and a drain portion connected to the channel portion, the source portion, a gate electrode overlapping the channel portion of the active pattern, a gate insulation layer disposed between the channel portion of the active pattern and the gate electrode, a source electrode disposed on the source portion of the active pattern to make ohmic contact with the source portion, and a drain electrode disposed on the drain portion of the active pattern to make ohmic contact with the drain portion. The drain portion and the channel portion of the active pattern include the same or substantially the same material.

    Abstract translation: 开关元件包括有源图形，其包括沟道部分，连接到沟道部分的源极部分和连接到沟道部分的漏极部分，源极部分，与有源图案的沟道部分重叠的栅极电极，栅极绝缘层 设置在有源图案的沟道部分和栅电极之间的层，设置在有源图案的源极部分上以与源极部分欧姆接触的源电极以及设置在有源图案的漏极部分上的漏电极， 与漏极部分欧姆接触。 有源图案的漏极部分和沟道部分包括相同或基本上相同的材料。

    Display substrate and method of manufacturing the same
    6.
    发明授权
    Display substrate and method of manufacturing the same 有权
    显示基板及其制造方法

    公开(公告)号：US09048322B2

    公开(公告)日：2015-06-02

    申请号：US13856851

    申请日：2013-04-04

    Applicant: Samsung Display Co., Ltd.

    Inventor： Yong-Su Lee ,  Hyang-Shik Kong ,  Yoon-Ho Khang ,  Hyun-Jae Na ,  Se-Hwan Yu ,  Myoung-Geun Cha

    IPC: H01L29/78 ,  H01L29/66 ,  H01L29/786 ,  H01L29/45

    CPC classification number: H01L29/7869 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/66969

    Abstract: A display substrate includes a base substrate, a data line disposed on the base substrate, a gate line crossing the data line, a first insulation layer disposed on the base substrate, an active pattern disposed on the first insulation layer and comprising a channel comprising an oxide semiconductor, a source electrode connected to the channel, and a drain electrode connected to the channel, a second insulation layer disposed on the active pattern, and contacting to the source electrode and the drain electrode, a gate electrode disposed on the second insulation layer, and overlapping with the channel, a passivation layer disposed on the gate electrode and the second insulation layer, and a pixel electrode electrically connected to the drain electrode through a first contact hole formed through the passivation layer and the second insulation layer.

    Abstract translation: 显示基板包括基底基板，设置在基底基板上的数据线，与数据线交叉的栅极线，设置在基底基板上的第一绝缘层，设置在第一绝缘层上的有源图案， 氧化物半导体，连接到沟道的源电极和连接到沟道的漏电极，设置在有源图案上的第二绝缘层，并与源电极和漏电极接触;栅极，设置在第二绝缘层上 并且与沟道重叠，设置在栅电极和第二绝缘层上的钝化层以及通过形成在钝化层和第二绝缘层上的第一接触孔与漏电极电连接的像素电极。

    Thin film transistor substrate including a fluorine layer in an active pattern
    7.
    发明授权
    Thin film transistor substrate including a fluorine layer in an active pattern 有权
    薄膜晶体管基板包括活性图案中的氟层

    公开(公告)号：US08791460B2

    公开(公告)日：2014-07-29

    申请号：US13693423

    申请日：2012-12-04

    Applicant: Samsung Display Co., Ltd.

    Inventor： Dae-Ho Kim ,  Hyun-Jae Na ,  Yong-Su Lee ,  Myoung-Geun Cha ,  Yoon-Ho Khang ,  Sang-Gab Kim ,  Jae-Neung Kim ,  Se-Hwan Yu

    IPC: H01L29/10

    CPC classification number: H01L29/786 ,  H01L29/4908 ,  H01L29/516 ,  H01L29/66477 ,  H01L29/78618 ,  H01L29/78693

    Abstract: A thin film transistor substrate includes a base substrate, an active pattern, a gate insulation pattern and a gate electrode. The active pattern is disposed on the base substrate. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode. The gate insulation pattern and the gate electrode overlap with the channel. The gate insulation pattern is disposed between the channel and the gate electrode. The source electrode and the drain electrode each include a fluorine deposition layer.

    Abstract translation: 薄膜晶体管基板包括基底基板，有源图案，栅极绝缘图案和栅电极。 有源图案设置在基底基板上。 有源图案包括源电极，漏电极和设置在源电极和漏极之间的沟道。 栅极绝缘图案和栅电极与沟道重叠。 栅极绝缘图案设置在沟道和栅电极之间。 源电极和漏极各自包括氟沉积层。

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