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公开(公告)号：US09941342B2
公开(公告)日：2018-04-10
申请号：US15088445
申请日：2016-04-01
Applicant: Samsung Display Co., Ltd.
Inventor： Choong-Youl Im , Il-Jeong Lee , Do-Hyun Kwon , Ju-Won Yoon , Moo-Soon Ko , Min-Woo Woo
CPC classification number: H01L27/3265 , H01L27/3248 , H01L27/3262 , H01L28/40 , H01L28/60 , H01L29/4908 , H01L51/52 , H01L2924/0002 , H01L2924/00
Abstract: An organic light emitting diode display includes: a substrate; a substrate insulating layer on the substrate; a capacitor on the substrate insulating layer; a driving thin film transistor including a driving gate electrode connected to the capacitor; and an organic light emitting element connected to the driving thin film transistor, where the capacitor includes: a first capacitor electrode on the substrate insulating layer; a second capacitor electrode on the first capacitor electrode; a capacitor insulating layer between the first capacitor electrode and the second capacitor electrode and contacting the first capacitor electrode and the second capacitor electrode, the capacitor insulating layer having a higher dielectric constant than the substrate insulating layer; and an auxiliary electrode contacting at least one of the first capacitor electrode or the second capacitor electrode.
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公开(公告)号：US09721499B2
公开(公告)日：2017-08-01
申请号：US14100349
申请日：2013-12-09
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Do-Hyun Kwon , Il-Jeong Lee , Choong-Youl Im , Ju-Won Yoon , Moo-Soon Ko , Min-Woo Woo
IPC: G09G3/32 , G09G3/3233 , H01L27/32
CPC classification number: G09G3/3233 , G09G2300/0426 , G09G2300/0861 , H01L27/3211 , H01L27/3279
Abstract: An organic light emitting diode (OLED) display including a first pixel, a second pixel, and a third pixel disposed in a matrix and first to third driving voltage lines configured to transmit a driving voltage to the first to third pixel, respectively. A width of one driving voltage line among the first to third driving voltage lines is different from the width of the other driving voltage lines.
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3.发明申请公开(公告)号：US20150357393A1
公开(公告)日：2015-12-10
申请号：US14810179
申请日：2015-07-27
Applicant: Samsung Display Co., Ltd.
Inventor： Do-Hyun Kwon , Il-Jung Lee , Choong-Youl Im , Moo-Soon Ko , Ju-Won Yoon , Min-Woo Woo
IPC: H01L27/32 , H01L29/24 , H01L27/12 , H01L29/786
CPC classification number: H01L27/3258 , H01L27/1225 , H01L27/1255 , H01L27/3262 , H01L27/3265 , H01L27/3272 , H01L29/24 , H01L29/78633 , H01L29/7869 , H01L33/0041 , H01L51/52
Abstract: A backplane for a flat panel display apparatus, includes: a thin film transistor (TFT) on a substrate and including an active layer, a gate electrode, a source electrode, and a drain electrode; a light-blocking layer between the substrate and the TFT; a first insulating layer between the light-blocking layer and the TFT; a capacitor including a first electrode on the same plane as the light-blocking layer, and a second electrode on the first electrode, wherein the first insulating layer is between the first electrode and the second electrode; and a pixel electrode on the same plane as the light-blocking layer.
Abstract translation: 一种平板显示装置的背板，包括：基板上的薄膜晶体管（TFT），包括有源层，栅电极，源电极和漏电极; 在衬底和TFT之间的遮光层; 在所述遮光层和所述TFT之间的第一绝缘层; 包括与所述遮光层在同一平面上的第一电极和所述第一电极上的第二电极的电容器，其中所述第一绝缘层位于所述第一电极和所述第二电极之间; 以及与遮光层在同一平面上的像素电极。
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4.发明申请公开(公告)号：US20140077184A1
公开(公告)日：2014-03-20
申请号：US13944247
申请日：2013-07-17
Applicant: Samsung Display Co., Ltd.
Inventor： Choong-Youl Im , Il-Jeong Lee , Do-Hyun Kwon , Ju-Won Yoon , Moo-Soon Ko , Min-Woo Woo
CPC classification number: H01L27/3265 , H01L27/3248 , H01L27/3262 , H01L28/40 , H01L28/60 , H01L29/4908 , H01L51/52 , H01L2924/0002 , H01L2924/00
Abstract: A capacitor positioned on a substrate insulating layer positioned on a substrate. The capacitor includes a first capacitor electrode positioned on the substrate insulating layer, a second capacitor electrode positioned on the first capacitor electrode, and a capacitor insulating layer coming into contact with the first capacitor electrode and the second capacitor electrode between the first capacitor electrode and the second capacitor electrode, and having a higher dielectric constant than the substrate insulating layer.
Abstract translation: 位于基板绝缘层上的电容器。 电容器包括位于基板绝缘层上的第一电容器电极，位于第一电容器电极上的第二电容器电极和与第一电容器电极和第二电容器电极接触的电容器绝缘层， 第二电容器电极，并且具有比衬底绝缘层更高的介电常数。
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公开(公告)号：US09502604B2
公开(公告)日：2016-11-22
申请号：US14810179
申请日：2015-07-27
Applicant: Samsung Display Co., Ltd.
Inventor： Do-Hyun Kwon , Il-Jung Lee , Choong-Youl Im , Moo-Soon Ko , Ju-Won Yoon , Min-Woo Woo
CPC classification number: H01L27/3258 , H01L27/1225 , H01L27/1255 , H01L27/3262 , H01L27/3265 , H01L27/3272 , H01L29/24 , H01L29/78633 , H01L29/7869 , H01L33/0041 , H01L51/52
Abstract: A backplane for a flat panel display apparatus, includes: a thin film transistor (TFT) on a substrate and including an active layer, a gate electrode, a source electrode, and a drain electrode; a light-blocking layer between the substrate and the TFT; a first insulating layer between the light-blocking layer and the TFT; a capacitor including a first electrode on the same plane as the light-blocking layer, and a second electrode on the first electrode, wherein the first insulating layer is between the first electrode and the second electrode; and a pixel electrode on the same plane as the light-blocking layer.
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Patent Agency Ranking
公开(公告)号：US09293514B2
公开(公告)日：2016-03-22
申请号：US14097420
申请日：2013-12-05
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Do-Hyun Kwon , Il-Jeong Lee , Choong-Youl Im , Ju-Won Yoon , Moo-Soon Ko , Min-Woo Woo
CPC classification number: H01L27/3265 , H01L27/1237 , H01L29/78645
Abstract: An organic light emitting diode (OLED) display includes a scan line, a data line, a driving voltage line, a switching transistor, a driving transistor and an OLED. The scan line is formed on a substrate to transmit a scan signal. The data line and the driving voltage line, intersecting the scan line, transmit a data signal and a driving voltage, respectively. The switching transistor, electrically coupled to the scan line and the data line, includes a switching semiconductor layer, a switching gate electrode, and a gate insulating layer having a first thickness. The driving transistor, electrically coupled to the switching drain electrode, includes a driving semiconductor layer, a driving gate electrode and a gate insulating layer having a second thickness. The OLED is electrically coupled to the driving drain electrode. The data line and the driving voltage line are formed with different layers from each other.
Abstract translation: 有机发光二极管（OLED）显示器包括扫描线，数据线，驱动电压线，开关晶体管，驱动晶体管和OLED。 扫描线形成在基板上以传输扫描信号。 与扫描线相交的数据线和驱动电压线分别传输数据信号和驱动电压。 电耦合到扫描线和数据线的开关晶体管包括开关半导体层，开关栅极电极和具有第一厚度的栅极绝缘层。 电耦合到开关漏电极的驱动晶体管包括驱动半导体层，驱动栅电极和具有第二厚度的栅极绝缘层。 OLED电耦合到驱动漏电极。 数据线和驱动电压线由彼此不同的层形成。
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公开(公告)号：US09135852B2
公开(公告)日：2015-09-15
申请号：US14029865
申请日：2013-09-18
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Do-Hyun Kwon , Il-Jeong Lee , Choong-Youl Im , Ju-Won Yoon , Moo-Soon Ko , Min-Woo Woo
CPC classification number: G09G3/32 , G09G3/3233 , G09G2300/0819 , G09G2300/0842 , G09G2320/045 , H01L27/124 , H01L27/1251 , H01L27/326 , H01L27/3276 , H01L2227/323
Abstract: A display includes a switching transistor connected to a scan line and data line, a driving transistor connected to the switching transistor, a storage capacitor between a voltage line and the driving transistor, and an organic light emitting diode connected to the driving transistor. The data line and voltage line are at different layers, and the data line and a gate electrode of the driving transistor are at different layers. Also, a plate of the storage capacitor and the gate electrode of the driving transistor are of a same layer, and semiconductor layers of the switching and driving transistors are of a same layer.
Abstract translation: 显示器包括连接到扫描线和数据线的开关晶体管，连接到开关晶体管的驱动晶体管，电压线和驱动晶体管之间的存储电容器和连接到驱动晶体管的有机发光二极管。 数据线和电压线处于不同的层，驱动晶体管的数据线和栅极电极处于不同的层。 此外，存储电容器的栅极和驱动晶体管的栅极电极具有相同的层，并且开关和驱动晶体管的半导体层具有相同的层。
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公开(公告)号：US20150001487A1
公开(公告)日：2015-01-01
申请号：US14103354
申请日：2013-12-11
Applicant: Samsung Display Co., Ltd.
Inventor： Do-Hyun Kwon , Il-Jeong Lee , Min-Jung Lee , Sung-Eun Lee , Jung-Kyu Lee , Kwang-Young Choi
CPC classification number: H01L27/1259 , H01L27/1248 , H01L27/3258 , H01L51/5246
Abstract: A display device includes a substrate, an active layer, a gate insulation layer, a gate electrode, an interlayer insulation layer, a clad layer, a source electrode, and a drain electrode. The active layer is disposed on the substrate. The gate insulation layer is disposed on the active layer. The gate electrode is disposed on the gate insulation layer. The interlayer insulation layer is disposed on the gate electrode. A dielectric constant of the interlayer insulation layer is less than a dielectric constant of the gate insulation layer. The clad layer is disposed on the interlayer insulation layer. The source and drain electrodes are disposed on the clad layer.
Abstract translation: 显示装置包括基板，有源层，栅极绝缘层，栅极电极，层间绝缘层，覆盖层，源极电极和漏极电极。 有源层设置在基板上。 栅极绝缘层设置在有源层上。 栅电极设置在栅绝缘层上。 层间绝缘层设置在栅电极上。 层间绝缘层的介电常数小于栅极绝缘层的介电常数。 包覆层设置在层间绝缘层上。 源极和漏极设置在覆盖层上。
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公开(公告)号：US20160181387A1
公开(公告)日：2016-06-23
申请号：US15054037
申请日：2016-02-25
Applicant: Samsung Display Co., Ltd.
Inventor： Jong-Yoon Kim , Il-Jeong Lee , Choong-Youl Im , Do-Hyun Kwon
IPC: H01L29/45 , H01L27/12 , H01L27/32 , H01L29/786
CPC classification number: H01L29/458 , H01L27/1214 , H01L27/1222 , H01L27/1248 , H01L27/127 , H01L27/3248 , H01L27/3262 , H01L29/78666 , H01L29/78675 , H01L2251/5315
Abstract: A thin film transistor including: a substrate; an active layer formed over the substrate; a gate insulating layer formed over the active layer; a gate electrode formed over the gate insulating layer; an interlayer insulating layer formed over the gate electrode; and source and drain electrodes that contact the active layer via the interlayer insulating layer. The source and drain electrodes may have a structure including an aluminum (Al) layer, an aluminum-nickel alloy (AlNiX) layer, and an indium tin oxide (ITO) layer, which are sequentially stacked.
Abstract translation: 1.一种薄膜晶体管，包括：基板; 形成在衬底上的有源层; 形成在有源层上的栅极绝缘层; 形成在所述栅绝缘层上的栅电极; 形成在所述栅电极上的层间绝缘层; 以及经由层间绝缘层与有源层接触的源极和漏极。 源电极和漏电极可以具有依次堆叠的铝（Al）层，铝镍合金（AlNiX）层和氧化铟锡（ITO）层的结构。
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公开(公告)号：US09281319B2
公开(公告)日：2016-03-08
申请号：US14244584
申请日：2014-04-03
Applicant: Samsung Display Co., Ltd.
Inventor： Jong-Yoon Kim , Il-Jeong Lee , Choong-Youl Im , Do-Hyun Kwon
CPC classification number: H01L29/458 , H01L27/1214 , H01L27/1222 , H01L27/1248 , H01L27/127 , H01L27/3248 , H01L27/3262 , H01L29/78666 , H01L29/78675 , H01L2251/5315
Abstract: A thin film transistor including: a substrate; an active layer formed over the substrate; a gate insulating layer formed over the active layer; a gate electrode formed over the gate insulating layer; an interlayer insulating layer formed over the gate electrode; and source and drain electrodes that contact the active layer via the interlayer insulating layer. The source and drain electrodes may have a structure including an aluminum (Al) layer, an aluminum-nickel alloy (AlNiX) layer, and an indium tin oxide (ITO) layer, which are sequentially stacked.
Abstract translation: 1.一种薄膜晶体管，包括：基板; 形成在衬底上的有源层; 形成在有源层上的栅极绝缘层; 形成在所述栅绝缘层上的栅电极; 形成在所述栅电极上的层间绝缘层; 以及经由层间绝缘层与有源层接触的源极和漏极。 源电极和漏电极可以具有依次堆叠的铝（Al）层，铝镍合金（AlNiX）层和氧化铟锡（ITO）层的结构。
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