公开(公告)号：US20160181387A1

公开(公告)日：2016-06-23

申请号：US15054037

申请日：2016-02-25

Applicant: Samsung Display Co., Ltd.

Inventor： Jong-Yoon Kim ,  Il-Jeong Lee ,  Choong-Youl Im ,  Do-Hyun Kwon

IPC: H01L29/45 ,  H01L27/12 ,  H01L27/32 ,  H01L29/786

CPC classification number: H01L29/458 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1248 ,  H01L27/127 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/78666 ,  H01L29/78675 ,  H01L2251/5315

Abstract: A thin film transistor including: a substrate; an active layer formed over the substrate; a gate insulating layer formed over the active layer; a gate electrode formed over the gate insulating layer; an interlayer insulating layer formed over the gate electrode; and source and drain electrodes that contact the active layer via the interlayer insulating layer. The source and drain electrodes may have a structure including an aluminum (Al) layer, an aluminum-nickel alloy (AlNiX) layer, and an indium tin oxide (ITO) layer, which are sequentially stacked.

Abstract translation: 1.一种薄膜晶体管，包括：基板; 形成在衬底上的有源层; 形成在有源层上的栅极绝缘层; 形成在所述栅绝缘层上的栅电极; 形成在所述栅电极上的层间绝缘层; 以及经由层间绝缘层与有源层接触的源极和漏极。 源电极和漏电极可以具有依次堆叠的铝（Al）层，铝镍合金（AlNiX）层和氧化铟锡（ITO）层的结构。

公开(公告)号：US09281319B2

公开(公告)日：2016-03-08

申请号：US14244584

申请日：2014-04-03

Applicant: Samsung Display Co., Ltd.

Inventor： Jong-Yoon Kim ,  Il-Jeong Lee ,  Choong-Youl Im ,  Do-Hyun Kwon

IPC: H01L29/43 ,  H01L27/12 ,  H01L29/45 ,  H01L27/32

CPC classification number: H01L29/458 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1248 ,  H01L27/127 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/78666 ,  H01L29/78675 ,  H01L2251/5315

Abstract: A thin film transistor including: a substrate; an active layer formed over the substrate; a gate insulating layer formed over the active layer; a gate electrode formed over the gate insulating layer; an interlayer insulating layer formed over the gate electrode; and source and drain electrodes that contact the active layer via the interlayer insulating layer. The source and drain electrodes may have a structure including an aluminum (Al) layer, an aluminum-nickel alloy (AlNiX) layer, and an indium tin oxide (ITO) layer, which are sequentially stacked.

Abstract translation: 1.一种薄膜晶体管，包括：基板; 形成在衬底上的有源层; 形成在有源层上的栅极绝缘层; 形成在所述栅绝缘层上的栅电极; 形成在所述栅电极上的层间绝缘层; 以及经由层间绝缘层与有源层接触的源极和漏极。 源电极和漏电极可以具有依次堆叠的铝（Al）层，铝镍合金（AlNiX）层和氧化铟锡（ITO）层的结构。

公开(公告)号：US20140217415A1

公开(公告)日：2014-08-07

申请号：US14244584

申请日：2014-04-03

Applicant: Samsung Display Co., Ltd.

Inventor： Jong-Yoon Kim ,  Il-Jeong Lee ,  Choong-Youl Im ,  Do-Hyun Kwon

IPC: H01L27/12

CPC classification number: H01L29/458 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1248 ,  H01L27/127 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/78666 ,  H01L29/78675 ,  H01L2251/5315

Abstract: A thin film transistor including: a substrate; an active layer formed over the substrate; a gate insulating layer formed over the active layer; a gate electrode formed over the gate insulating layer; an interlayer insulating layer formed over the gate electrode; and source and drain electrodes that contact the active layer via the interlayer insulating layer. The source and drain electrodes may have a structure including an aluminum (Al) layer, an aluminum-nickel alloy (AlNiX) layer, and an indium tin oxide (ITO) layer, which are sequentially stacked.

Abstract translation: 1.一种薄膜晶体管，包括：基板; 形成在衬底上的有源层; 形成在有源层上的栅极绝缘层; 形成在所述栅绝缘层上的栅电极; 形成在所述栅电极上的层间绝缘层; 以及经由层间绝缘层与有源层接触的源极和漏极。 源电极和漏电极可以具有依次堆叠的铝（Al）层，铝镍合金（AlNiX）层和氧化铟锡（ITO）层的结构。