公开(公告)号：US20250142967A1

公开(公告)日：2025-05-01

申请号：US18914400

申请日：2024-10-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： LUHING HU ,  Sangwon KIM ,  Joonseok Kim ,  Joonyun Kim ,  JUNHEE CHOI

IPC: H01L27/12 ,  H01L25/065 ,  H01L27/15

Abstract: A display panel includes a substrate, a gate electrode disposed on the substrate, a two-dimensional semiconductor material layer overlapping the gate electrode, a source electrode and a drain electrode electrically connected to the two-dimensional semiconductor material layer, a first electrode of a micro light-emitting diode electrically connected to the drain electrode, an active layer electrically connected to the first electrode of the micro light-emitting diode, where the active layer includes a quantum well layer surrounded by an ion-doped insulating partition, and a second electrode of the micro light-emitting diode electrically connected to the active layer.

公开(公告)号：US20250107160A1

公开(公告)日：2025-03-27

申请号：US18625801

申请日：2024-04-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joonseok Kim ,  Sangwon KIM ,  CHANG SEOK LEE ,  Huije Ryu ,  KEUN WOOK SHIN

IPC: H01L29/76

Abstract: A transistor including a semiconductor channel including a compound semiconductor, and a source electrode and a drain electrode each electrically connected to the semiconductor channel and each independently including a topological conductor, wherein the compound semiconductor and the topological conductor include at least one metal element in common.

公开(公告)号：US20240153468A1

公开(公告)日：2024-05-09

申请号：US18534201

申请日：2023-12-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangwon KIM

IPC: G09G5/00 ,  G06F3/14

CPC classification number: G09G5/003 ,  G06F3/1446 ,  G09G2300/026 ,  G09G2370/08

Abstract: A display apparatus of a modular display apparatus including a plurality of display apparatuses includes a communication interface, and a plurality of driver integrated circuits (ICs), where a first driver IC among the plurality of driver ICs is configured to, based on receiving a first signal transmitted by an external device through the communication interface, transmit the first signal to a second driver IC adjacent to the first driver IC such that the first signal is sequentially transmitted to remaining driver ICs among the plurality of driver ICs that are connected in a daisy chain manner, and each of the first driver IC and the second driver IC is configured to transmit a second signal, that is transmitted by the external device, to a first other display apparatus among the plurality of display apparatuses that is connected to the display apparatus.

公开(公告)号：US20240023297A1

公开(公告)日：2024-01-18

申请号：US18359208

申请日：2023-07-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonggeun YOON ,  Sangwon KIM ,  Youngwook KIM ,  Chankyu LIM ,  Pilwon SEO ,  Jiwoo LEE

IPC: H05K7/20 ,  G09G3/20 ,  G06F3/0354 ,  G06F3/038

CPC classification number: H05K7/20963 ,  G09G3/2096 ,  G09G3/2007 ,  G06F3/03545 ,  G06F3/038 ,  G09G2320/041 ,  G09G2320/0626 ,  G09G2340/0435 ,  G09G2354/00

Abstract: An electronic device including a thermal diffusion member for reducing hot spots is provided. The electronic device includes a plurality of display driver integrated circuits (DDICs) spaced apart from each other in a non-display area of a display panel, and disposed oriented in a first direction from the display panel, a circuit board disposed in a second direction opposite to the first direction from the display panel, and including a timing controller IC (T-CON IC) disposed so as to overlap at least some of the plurality of DDICs when the display panel is viewed from the first direction, a flexible circuit board disposed at one end of the display panel, and electrically connecting the plurality of DDICs and the circuit board, and a thermal diffusion member disposed, between the circuit board and the display panel.

公开(公告)号：US20230217336A1

公开(公告)日：2023-07-06

申请号：US18118171

申请日：2023-03-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangwon KIM ,  Jaehyun SIM

IPC: H04W36/24

CPC classification number: H04W36/24

Abstract: An example electronic device includes a communication processor for establishing a cellular communication with a first node supporting a first frequency band or a second node supporting a second frequency band; an application processor; and memory. The memory can store instructions which, when executed, control the communication processor such that: the communication processor confirms a service type performed by the cellular communication; the application processor confirms whether or not the state of the electronic device satisfies a predetermined condition set differently in accordance with the service type; and the application processor blocks a connection with the second node and/or releases the connection with the second node, in response to confirming that the state of the electronic device does not satisfy the predetermined condition.

公开(公告)号：US20230081960A1

公开(公告)日：2023-03-16

申请号：US17697400

申请日：2022-03-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun BYUN ,  Sangwon KIM ,  Changhyun KIM ,  Keunwook SHIN ,  Changseok LEE

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/417 ,  H01L29/10 ,  H01L29/423

Abstract: A vertical channel transistor includes a first source/drain electrode; a second source/drain electrode spaced apart from the first source/drain electrode in a first direction; a first channel pattern between the first source/drain electrode and the second source/drain electrode; a first gate electrode on a side surface of the first channel pattern; a first gate insulation layer between the first channel pattern and the first gate electrode; and a first graphene insertion layer between the first source/drain electrode and the first channel pattern.

公开(公告)号：US20230022023A1

公开(公告)日：2023-01-26

申请号：US17548997

申请日：2021-12-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changseok LEE ,  Sangwon KIM ,  Keunwook SHIN

IPC: H01L21/285 ,  H01L29/40

Abstract: A film deposition method may include preparing a non-planar substrate including a first surface, a second surface, and an inclined surface between the first surface and the second surface; depositing a film having a thickness deviation on the first surface, the second surface, and the inclined surface; and etching the film deposited on the first surface, the second surface, and the inclined surface. A height of the second surface may be different than a height of the first surface.

公开(公告)号：US20220333010A1

公开(公告)日：2022-10-20

申请号：US17720518

申请日：2022-04-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwon KIM ,  Xinliang FENG ,  Fupeng WU ,  Junzhi LIU ,  Klaus MUELLEN ,  Wenhui NIU ,  Hyeonjin SHIN

IPC: C09K11/65 ,  C01B32/182

Abstract: Provided are soluble graphene quantum dots and light-emitting devices including the same. The soluble graphene quantum dot has an anthracenyl N-alkyl maleimide functional group at an edge thereof, thereby exhibiting improved solubility and/or improved emission characteristics.

公开(公告)号：US20220328671A1

公开(公告)日：2022-10-13

申请号：US17539768

申请日：2021-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhyun KIM ,  Hyeonjin SHIN ,  Minhyun LEE ,  Taejin CHOI ,  Sangwon KIM ,  Bongseob YANG ,  Eunkyu LEE

IPC: H01L29/76 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/16 ,  H01L29/20 ,  H01L29/24

Abstract: A field effect transistor structure is disclosed. The field effect transistor structure includes: a fin-shaped channel protruding from a substrate and extending in one direction; a source electrode on one side of the fin-shaped channel; a drain electrode separated from the source electrode with the fin-shaped channel therebetween; a gate insulating film surrounding side and upper surfaces of the fin-shaped channel; a gate electrode on the gate insulating film; and a two-dimensional semiconductor material layer between the gate insulating film and the gate electrode.

公开(公告)号：US20210276873A1

公开(公告)日：2021-09-09

申请号：US17190852

申请日：2021-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwon KIM ,  Kyung-Eun BYUN ,  Hyeonjin SHIN ,  Eunkyu LEE ,  Changseok LEE

IPC: C01B32/186

Abstract: A graphene manufacturing apparatus includes a reaction chamber a substrate supporter configured to structurally support a substrate inside the reaction chamber; a plasma generator configured to generate a plasma inside the reaction chamber; a first gas supply configured to supply an inert gas into the reaction chamber at a first height from an upper surface of the substrate supporter in a height direction of the reaction chamber; a second gas supply configured to supply a carbon source into the reaction chamber at a second height from the upper surface of the substrate supporter in the height direction of the reaction chamber; and a third gas supply configured to supply a reducing gas into the reaction chamber, wherein the first to third gas supply units are disposed at different heights at a third height from the upper surface of the substrate supporter in the height direction of the reaction chamber.