公开(公告)号：US20250107160A1

公开(公告)日：2025-03-27

申请号：US18625801

申请日：2024-04-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joonseok Kim ,  Sangwon KIM ,  CHANG SEOK LEE ,  Huije Ryu ,  KEUN WOOK SHIN

IPC: H01L29/76

Abstract: A transistor including a semiconductor channel including a compound semiconductor, and a source electrode and a drain electrode each electrically connected to the semiconductor channel and each independently including a topological conductor, wherein the compound semiconductor and the topological conductor include at least one metal element in common.

公开(公告)号：US20240355499A1

公开(公告)日：2024-10-24

申请号：US18641543

申请日：2024-04-22

Applicant: Samsung Electronics Co., Ltd. ,  UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： CHANG SEOK LEE ,  Yohan KIM ,  Hyung-Joon SHIN ,  KYUNGEUN BYUN ,  KEUN WOOK SHIN ,  HYEON JIN SHIN ,  Seungwoo SON ,  Zonghoon LEE

IPC: H01B1/04 ,  C23C16/26 ,  C23C16/50 ,  H01L21/285 ,  H01L21/768 ,  H01L23/48 ,  H01L23/522 ,  H01L23/532 ,  H01L25/065

CPC classification number: H01B1/04 ,  H01L21/76885 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/53276 ,  C23C16/26 ,  C23C16/50 ,  H01L21/28556 ,  H01L25/0657 ,  H01L2225/06541 ,  H01L2225/06565

Abstract: Spiral graphene nanocrystals having electrical conductivity in a vertical direction due to interlayer covalent bonds, a graphene thin film including the spiral graphene nanocrystals, an interconnect structure manufactured from the spiral graphene nanocrystals or the graphene thin film, and a method of manufacturing the interconnect structure and an electronic device including the interconnect structure.