TOP MODULE AND EXPOSING APPARATUS INCLUDING THE SAME

    公开(公告)号:US20250021008A1

    公开(公告)日:2025-01-16

    申请号:US18403030

    申请日:2024-02-07

    Abstract: A top module of an exposing apparatus may include a reticle stage, a nozzle and a pair of guides. The reticle stage may be configured to support a reticle to which a light is incident. The nozzle may be under the reticle stage and configured to inject a shielding gas in a first horizontal direction. The guides may extend from opposite sides of the nozzle and may be configured to induce the shielding gas in the first horizontal direction. Thus, the shielding gas may not diffuse in a second horizontal direction (e.g., perpendicular to the first horizontal direction) to prevent a diffusion of a contaminant in the shielding gas, thereby preventing the reticle from being contaminated. As a result, a pattern of the reticle may be accurately transcribed into a layer on a semiconductor substrate to form a desired pattern.

    Extreme ultraviolet exposure system

    公开(公告)号:US11016400B1

    公开(公告)日:2021-05-25

    申请号:US16880090

    申请日:2020-05-21

    Abstract: An extreme ultraviolet exposure system includes an exposure chamber having an internal space, upper and lower electrostatic chucks, a power supply, a light source, and a mask. The upper electrostatic chuck includes first and second electrodes that are adjacent to one another and that generate an electric field of different polarities, respectively, to provide an electrostatic force. The mask is attachable to the lower surface of the upper electrostatic chuck by the electrostatic force. The mask has a metal thin film pattern including a first region in which a metal thin film that shields the electric field, and a second region in which the metal thin film is not disposed and through which the electric field is transmitted. When the mask is attached, the electric field transmitted through the second region applies an attractive force or a repulsive force to charged particles in the exposure chamber.

    SUBSTRATE PROCESSING APPARATUS
    6.
    发明公开

    公开(公告)号:US20240142886A1

    公开(公告)日:2024-05-02

    申请号:US18322161

    申请日:2023-05-23

    CPC classification number: G03F7/70908 G03F7/70716 H01L21/68

    Abstract: A substrate processing apparatus includes a table in an exposure chamber that is configured to perform an exposure process on a semiconductor substrate, a guiding device including a first horizontal driving body slidably movable in a first horizontal direction and a guide rail on the first horizontal driving body and having a trench extending in a second horizontal direction, a positioning device connected to the guiding device, the positioning device including a slider, a second horizontal driving body and a substrate stage, the slider configured to slidably move in the second horizontal direction along the trench, the second horizontal driving body connected or fixed to the slider, the substrate stage on the second horizontal driving body and configured to support the semiconductor substrate, and a blocking member between the guide rail and the substrate stage to block an inflow of foreign substances onto the substrate stage.

    Extreme ultraviolet light source systems

    公开(公告)号:US11304287B1

    公开(公告)日:2022-04-12

    申请号:US17325327

    申请日:2021-05-20

    Abstract: Extreme ultraviolet light source systems may include a chamber including a condensing mirror and having an intermediate focus, by which extreme ultraviolet light reflected from the condensing mirror is emitted along a first optical path, a blocking plate that may be on the chamber so as to intersect the first optical path and may include an opening through which the extreme ultraviolet light is emitted, a transparent cover on the blocking plate so as to cover the opening, a nozzle that may be between the chamber and the blocking plate so that an end portion faces the intermediate focus and may spray a first gas in a direction intersecting the first optical path, and an exhaust pipe between the chamber and the blocking plate so as to face the end portion of the nozzle.

    EXTREME ULTRAVIOLET LIGHT SOURCE SYSTEM

    公开(公告)号:US20220075271A1

    公开(公告)日:2022-03-10

    申请号:US17221388

    申请日:2021-04-02

    Abstract: An extreme ultraviolet light source system includes a chamber configured to maintain a pressure of an inner space thereof at a first pressure, a droplet supply unit disposed in the chamber and configured to discharge a droplet on a first path, a light source configured to emit a light for generating plasma by irradiating a laser light to the droplet at a focal point on the first path, and a suction unit disposed on the first path so as to face the droplet supply unit in the chamber and configured to suction debris of the droplet irradiated with the laser light at a second pressure, lower than the first pressure, wherein the suction unit includes a nozzle protruding from a side wall of the chamber toward the focal point, and an end of the nozzle is closer to the focal point than it is to the side wall of the chamber.

    EXTREME ULTRAVIOLET EXPOSURE SYSTEM

    公开(公告)号:US20210132515A1

    公开(公告)日:2021-05-06

    申请号:US16880090

    申请日:2020-05-21

    Abstract: An extreme ultraviolet exposure system includes an exposure chamber having an internal space, upper and lower electrostatic chucks, a power supply, a light source, and a mask.
    The upper electrostatic chuck includes first and second electrodes that are adjacent to one another and that generate an electric field of different polarities, respectively, to provide an electrostatic force.
    The mask is attachable to the lower surface of the upper electrostatic chuck by the electrostatic force. The mask has a metal thin film pattern including a first region in which a metal thin film that shields the electric field, and a second region in which the metal thin film is not disposed and through which the electric field is transmitted.
    When the mask is attached, the electric field transmitted through the second region applies an attractive force or a repulsive force to charged particles in the exposure chamber.

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