Substrate processing apparatus
    1.
    发明授权

    公开(公告)号:US12298676B2

    公开(公告)日:2025-05-13

    申请号:US18322161

    申请日:2023-05-23

    Abstract: A substrate processing apparatus includes a table in an exposure chamber that is configured to perform an exposure process on a semiconductor substrate, a guiding device including a first horizontal driving body slidably movable in a first horizontal direction and a guide rail on the first horizontal driving body and having a trench extending in a second horizontal direction, a positioning device connected to the guiding device, the positioning device including a slider, a second horizontal driving body and a substrate stage, the slider configured to slidably move in the second horizontal direction along the trench, the second horizontal driving body connected or fixed to the slider, the substrate stage on the second horizontal driving body and configured to support the semiconductor substrate, and a blocking member between the guide rail and the substrate stage to block an inflow of foreign substances onto the substrate stage.

    INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20250054822A1

    公开(公告)日:2025-02-13

    申请号:US18654799

    申请日:2024-05-03

    Abstract: An integrated circuit device includes a first semiconductor substrate having a frontside surface and a backside surface, a front-end-of-line (FEOL) structure on the frontside surface of the first semiconductor substrate, the FEOL structure including a plurality of fin-type active regions, a back-end-of-line (BEOL) structure on the FEOL structure, a second BEOL structure on the backside surface of the first semiconductor substrate, and a second semiconductor substrate spaced apart from the first semiconductor substrate in the vertical direction with the FEOL structure and the first BEOL structure therebetween, wherein a Young's modulus of a first crystal orientation extending parallel to the frontside surface of the first semiconductor substrate is different from a Young's modulus of a second crystal orientation that overlaps the first crystal orientation in the vertical direction and extends parallel to the first crystal orientation in the second semiconductor substrate.

    SUBSTRATE SUPPORTING APPARATUS
    3.
    发明公开

    公开(公告)号:US20240079264A1

    公开(公告)日:2024-03-07

    申请号:US18235603

    申请日:2023-08-18

    CPC classification number: H01L21/68742 H01L21/67288 H01L21/68785

    Abstract: A substrate supporting apparatus includes a stage table configured to support a substrate and including a plurality of openings, a plurality of lift pins disposed to be vertically movable through the plurality of openings and configured to support the substrate, a lift support positioned outside the stage table from a plan view and vertically movable to support the substrate, an actuator configured to vertically actuate the plurality of lift pins and the lift support so as to load the substrate onto the stage table, and a controller configured to control the actuator.

    SEMICONDUCTOR CHIP BONDING APPARATUS INCLUDING HEAD HAVING THERMALLY CONDUCTIVE MATERIALS

    公开(公告)号:US20210069811A1

    公开(公告)日:2021-03-11

    申请号:US16807466

    申请日:2020-03-03

    Abstract: Provided a semiconductor chip bonding apparatus including a body, a heater disposed on a lower surface of the body, a collet disposed on a lower surface of the heater, and a head disposed on a lower surface of the collet, the head has a rectangular plate shape, a lower surface and side surfaces of the head are exposed, an upper surface of the head is in contact with the lower surface of the collet, an area of the upper surface of the head is smaller than an area of the lower surface of the collet, the head includes a central section including a recess, and an outer surface constituting a part of the side surfaces of the head, and a peripheral section connected to the recess and disposed on each corners of the head, and a thermal conductivity of the peripheral section is different from that of the central section.

    SUBSTRATE PROCESSING APPARATUS
    6.
    发明公开

    公开(公告)号:US20240142886A1

    公开(公告)日:2024-05-02

    申请号:US18322161

    申请日:2023-05-23

    CPC classification number: G03F7/70908 G03F7/70716 H01L21/68

    Abstract: A substrate processing apparatus includes a table in an exposure chamber that is configured to perform an exposure process on a semiconductor substrate, a guiding device including a first horizontal driving body slidably movable in a first horizontal direction and a guide rail on the first horizontal driving body and having a trench extending in a second horizontal direction, a positioning device connected to the guiding device, the positioning device including a slider, a second horizontal driving body and a substrate stage, the slider configured to slidably move in the second horizontal direction along the trench, the second horizontal driving body connected or fixed to the slider, the substrate stage on the second horizontal driving body and configured to support the semiconductor substrate, and a blocking member between the guide rail and the substrate stage to block an inflow of foreign substances onto the substrate stage.

    Semiconductor chip bonding apparatus including head having thermally conductive materials

    公开(公告)号:US11607741B2

    公开(公告)日:2023-03-21

    申请号:US16807466

    申请日:2020-03-03

    Abstract: Provided a semiconductor chip bonding apparatus including a body, a heater disposed on a lower surface of the body, a collet disposed on a lower surface of the heater, and a head disposed on a lower surface of the collet, the head has a rectangular plate shape, a lower surface and side surfaces of the head are exposed, an upper surface of the head is in contact with the lower surface of the collet, an area of the upper surface of the head is smaller than an area of the lower surface of the collet, the head includes a central section including a recess, and an outer surface constituting a part of the side surfaces of the head, and a peripheral section connected to the recess and disposed on each corners of the head, and a thermal conductivity of the peripheral section is different from that of the central section.

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