Abstract:
A backplane for a flat panel display apparatus, includes: a thin film transistor (TFT) on a substrate and including an active layer, a gate electrode, a source electrode, and a drain electrode; a light-blocking layer between the substrate and the TFT; a first insulating layer between the light-blocking layer and the TFT; a capacitor including a first electrode on the same plane as the light-blocking layer, and a second electrode on the first electrode, wherein the first insulating layer is between the first electrode and the second electrode; and a pixel electrode on the same plane as the light-blocking layer.
Abstract:
An organic light emitting diode (OLED) display includes a scan line, a data line, a driving voltage line, a switching transistor, a driving transistor and an OLED. The scan line is formed on a substrate to transmit a scan signal. The data line and the driving voltage line, intersecting the scan line, transmit a data signal and a driving voltage, respectively. The switching transistor, electrically coupled to the scan line and the data line, includes a switching semiconductor layer, a switching gate electrode, and a gate insulating layer having a first thickness. The driving transistor, electrically coupled to the switching drain electrode, includes a driving semiconductor layer, a driving gate electrode and a gate insulating layer having a second thickness. The OLED is electrically coupled to the driving drain electrode. The data line and the driving voltage line are formed with different layers from each other.
Abstract:
A display includes a switching transistor connected to a scan line and data line, a driving transistor connected to the switching transistor, a storage capacitor between a voltage line and the driving transistor, and an organic light emitting diode connected to the driving transistor. The data line and voltage line are at different layers, and the data line and a gate electrode of the driving transistor are at different layers. Also, a plate of the storage capacitor and the gate electrode of the driving transistor are of a same layer, and semiconductor layers of the switching and driving transistors are of a same layer.
Abstract:
A thin film transistor array substrate including a first TFT including a first active layer, a gate electrode, a first source electrode and a first drain electrode, a second TFT including a second active layer, a floating gate electrode, a control gate electrode, a second source electrode, and a second drain electrode, a capacitor including a first electrode and a second electrode, and a capping layer contacting a portion of the first electrode, the capping layer and the second electrode being on a same layer, is disclosed. A method of manufacturing thin film transistor array substrate is also disclosed.
Abstract:
An organic light emitting diode display includes: a substrate; a substrate insulating layer on the substrate; a capacitor on the substrate insulating layer; a driving thin film transistor including a driving gate electrode connected to the capacitor; and an organic light emitting element connected to the driving thin film transistor, where the capacitor includes: a first capacitor electrode on the substrate insulating layer; a second capacitor electrode on the first capacitor electrode; a capacitor insulating layer between the first capacitor electrode and the second capacitor electrode and contacting the first capacitor electrode and the second capacitor electrode, the capacitor insulating layer having a higher dielectric constant than the substrate insulating layer; and an auxiliary electrode contacting at least one of the first capacitor electrode or the second capacitor electrode.
Abstract:
An organic light-emitting diode (OLED) display apparatus and a method of manufacturing the OLED display apparatus, the apparatus includes anode electrodes having different thicknesses for different types of sub-pixels.
Abstract:
A thin film transistor (TFT) includes a semiconductor active layer, a gate electrode, a source electrode, and a drain electrode. The semiconductor active layer includes a first doped region as a source region, a second doped region as a drain region, an undoped region between the first and second doped regions. A third doped region is disposed between the second doped region and the undoped region. The gate electrode is insulated from the semiconductor active layer and overlaps the third doped region and the undoped region. The source electrode and the drain electrode are connected to the first and second doped regions.
Abstract:
Provided are organic luminescence display and method for manufacturing the same. According to an aspect of the present invention, there is provided an organic luminescence display comprising a substrate and a plurality of pixels disposed on the substrate. The pixels comprise a plurality of first pixels, each comprising a first organic light-emitting layer, and a plurality of second pixels which are smaller than the first pixels and each of which comprises a second organic light-emitting layer. The surface roughness of the second organic light-emitting layer is greater than the surface roughness of the first organic light-emitting layer.
Abstract:
A display device includes: a substrate including a display area and a peripheral area; a first conductive layer on the substrate in the peripheral area; an insulation layer covering the first conductive layer; and a second conductive layer on the insulation layer in the peripheral area, the second conductive layer including a plurality of first holes, wherein the first conductive layer does not overlap the first holes of the second conductive layer.
Abstract:
A backplane for a flat panel display apparatus, includes: a thin film transistor (TFT) on a substrate and including an active layer, a gate electrode, a source electrode, and a drain electrode; a light-blocking layer between the substrate and the TFT; a first insulating layer between the light-blocking layer and the TFT; a capacitor including a first electrode on the same plane as the light-blocking layer, and a second electrode on the first electrode, wherein the first insulating layer is between the first electrode and the second electrode; and a pixel electrode on the same plane as the light-blocking layer.