公开(公告)号：US20180182850A1

公开(公告)日：2018-06-28

申请号：US15836889

申请日：2017-12-10

Applicant: Renesas Electronics Corporation

Inventor： Masaru KADOSHIMA ,  Masahiko FUJISAWA

IPC: H01L29/08 ,  H01L23/522 ,  H01L21/762 ,  H01L21/84 ,  H01L21/02 ,  H01L27/12 ,  H01L21/768

CPC classification number: H01L29/0847 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02647 ,  H01L21/0265 ,  H01L21/76283 ,  H01L21/76802 ,  H01L21/76897 ,  H01L21/84 ,  H01L23/5226 ,  H01L27/1203 ,  H01L29/41733 ,  H01L29/66772 ,  H01L29/78618 ,  H01L29/78624 ,  H01L29/78654

Abstract: In a semiconductor device, a width of a second epitaxial layer is greater than a width of a first epitaxial layer, and a thickness of an end portion of the second epitaxial layer, which is in contact with an element isolation portion, is smaller than a thickness of an end portion of the first epitaxial layer, which is in contact with the element isolation portion, and a second shortest distance between the element isolation portion and a second plug is greater than a first shortest distance between the element isolation portion and a first plug.

公开(公告)号：US20180308991A1

公开(公告)日：2018-10-25

申请号：US15904601

申请日：2018-02-26

Applicant: Renesas Electronics Corporation

Inventor： Masaru KADOSHIMA ,  Masao INOUE

IPC: H01L29/792 ,  H01L29/423 ,  H01L21/28 ,  H01L29/66 ,  H01L27/11568

CPC classification number: H01L29/7923 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/28282 ,  H01L27/11568 ,  H01L29/4234 ,  H01L29/513 ,  H01L29/66833

Abstract: To improve the performance of a semiconductor device, the semiconductor device includes an insulating film portion over a semiconductor substrate. The insulating film portion includes an insulating film containing silicon and oxygen, a first charge storage film containing silicon and nitrogen, an insulating film containing silicon and oxygen, a second charge storage film containing silicon and nitrogen, and an insulating film containing silicon and oxygen. The first charge storage film is included by two charge storage films.

公开(公告)号：US20200027996A1

公开(公告)日：2020-01-23

申请号：US16452261

申请日：2019-06-25

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Masao INOUE ,  Masaru KADOSHIMA ,  Yoshiyuki KAWASHIMA ,  Ichiro YAMAKAWA

IPC: H01L29/792 ,  H01L29/423 ,  H01L29/51 ,  H01L21/28 ,  H01L21/02 ,  H01L29/66

Abstract: A memory cell, which is a nonvolatile memory cell, includes a gate dielectric film having charge storage layer capable of holding charges, and a memory gate electrode formed on the gate dielectric film. The charge storage layer includes an insulating film containing hafnium, silicon, and oxygen, an insertion layer formed on the insulating film and containing aluminum, and an insulating film formed on the insertion layer and containing hafnium, silicon, and oxygen.