公开(公告)号：US10158002B2

公开(公告)日：2018-12-18

申请号：US15678021

申请日：2017-08-15

Applicant: NXP B.V.

Inventor： Mahmoud Al-sa'di ,  Petrus Magnee ,  Johannes Donkers ,  Ihor Brunets ,  Joost Melai

IPC: H01L29/66 ,  H01L21/265 ,  H01L29/78

Abstract: A method of making a semiconductor switch device and a semiconductor switch device made according to the method. The method includes depositing a gate dielectric on a major surface of a substrate. The method also includes depositing and patterning a gate electrode on the gate dielectric. The method further includes depositing an oxide to cover the top surface and sidewall(s) of the gate electrode. The method also includes, after depositing the oxide, performing a first ion implantation process at a first implantation dosage for forming a lightly doped drain region of the switch device. The method further includes forming sidewall spacers on the sidewall(s) of the gate electrode. The method also includes performing a second ion implantation process at a second implantation dosage for forming a source region and a drain region of the semiconductor switch device. The second implantation dosage is greater than the first implantation dosage.

公开(公告)号：US09331155B2

公开(公告)日：2016-05-03

申请号：US14249108

申请日：2014-04-09

Applicant: NXP B.V.

Inventor： Johannes Donkers ,  Hans Broekman ,  Stephan Heil ,  Mark De Keijser ,  Cecilia van der Schaar

IPC: H01L49/02 ,  H01L29/205 ,  H01L21/285 ,  H01L29/45 ,  H01L29/47 ,  H01L29/66 ,  H01L29/778 ,  H01L29/20

CPC classification number: H01L29/205 ,  H01L21/28575 ,  H01L21/28581 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/475 ,  H01L29/66462 ,  H01L29/7787

Abstract: Disclosed is a semiconductor device comprising at least one active layer (14, 16) on a substrate (10) and a first contact (24, 26, 28) to the at least one active layer, the first contact comprising a metal in contact with the at least one active layer and a titanium tungsten nitride (TiW(N)) layer (30) on the metal. A method of manufacturing such a semiconductor device is also disclosed.

Abstract translation: 公开了一种半导体器件，其包括在衬底（10）上的至少一个有源层（14,16）和至少一个有源层的第一接触（24,26,28），所述第一接触包括与 所述至少一个有源层和所述金属上的氮化钨（TiW（N））层（30）。 还公开了制造这种半导体器件的方法。

公开(公告)号：US20140327110A1

公开(公告)日：2014-11-06

申请号：US14259550

申请日：2014-04-23

Applicant: NXP B.V.

Inventor： Evelyne Gridelet ,  Johannes Donkers ,  Petrus Hubertus Cornelis Magnee ,  Viet Dinh ,  Tony Vanhoucke

IPC: H01L29/732 ,  H01L29/66

CPC classification number: H01L29/732 ,  H01L29/407 ,  H01L29/66242 ,  H01L29/66272 ,  H01L29/7378

Abstract: Consistent with an example embodiment, a bipolar transistor comprises an emitter region vertically separated from a collector region in a substrate by a base region. The bipolar transistor further comprises a field plate electrically connected to the emitter region; the field plate extends from the emitter region along the base region into the collector region and the field plate is laterally electrically insulated from the base region and the collector region by a spacer. The spacer comprises an electrically isolating material that includes a silicon nitride layer and is vertically electrically isolated from the substrate by a further electrically isolating material.

Abstract translation: 与示例实施例一致，双极晶体管包括通过基极区域与衬底中的集电极区域垂直分离的发射极区域。 双极晶体管还包括电连接到发射极区的场板; 场板沿着基极区域从发射极区域延伸到集电极区域，并且场板通过间隔物与基极区域和集电极区域横向电绝缘。 间隔物包括电绝缘材料，其包括氮化硅层，并通过另外的电绝缘材料与衬底垂直电隔离。

公开(公告)号：US20170229564A1

公开(公告)日：2017-08-10

申请号：US15494868

申请日：2017-04-24

Applicant: NXP B.V.

Inventor： Johannes Donkers ,  Viet Thanh Dinh ,  Tony Vanhoucke ,  Evelyne Gridelet ,  Anco Heringa ,  Dirk Klaassen

IPC: H01L29/737 ,  H01L29/40 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L29/737 ,  H01L29/0649 ,  H01L29/205 ,  H01L29/407 ,  H01L29/66242 ,  H01L29/6625 ,  H01L29/735 ,  H01L29/7378

Abstract: The disclosure relates to bipolar transistor devices and a method of fabricating the same. The device comprises a field plate, in an isolation region adjacent to a base-collector junction of said active region. The isolation region comprises a gate terminal arranged to be biased independently of a collector, base or emitter terminal of said transistor.

公开(公告)号：US10014398B2

公开(公告)日：2018-07-03

申请号：US15494868

申请日：2017-04-24

Applicant: NXP B.V.

Inventor： Johannes Donkers ,  Viet Thanh Dinh ,  Tony Vanhoucke ,  Evelyne Gridelet ,  Anco Heringa ,  Dirk Klaassen

IPC: H01L29/66 ,  H01L29/737 ,  H01L29/06 ,  H01L29/40

CPC classification number: H01L29/737 ,  H01L29/0649 ,  H01L29/205 ,  H01L29/407 ,  H01L29/66242 ,  H01L29/6625 ,  H01L29/735 ,  H01L29/7378

Abstract: The disclosure relates to bipolar transistor devices and a method of fabricating the same. The device comprises a field plate, in an isolation region adjacent to a base-collector junction of said active region. The isolation region comprises a gate terminal arranged to be biased independently of a collector, base or emitter terminal of said transistor.

公开(公告)号：US20180053833A1

公开(公告)日：2018-02-22

申请号：US15678021

申请日：2017-08-15

Applicant: NXP B.V.

Inventor： Mahmoud Al-sa'di ,  Petrus Magnee ,  Johannes Donkers ,  Ihor Brunets ,  Joost Melai

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/265

CPC classification number: H01L29/6659 ,  H01L21/265 ,  H01L29/6656 ,  H01L29/7833

Abstract: A method of making a semiconductor switch device and a semiconductor switch device made according to the method. The method includes depositing a gate dielectric on a major surface of a substrate. The method also includes depositing and patterning a gate electrode on the gate dielectric. The method further includes depositing an oxide to cover the top surface and sidewall(s) of the gate electrode. The method also includes, after depositing the oxide, performing a first ion implantation process at a first implantation dosage for forming a lightly doped drain region of the switch device. The method further includes forming sidewall spacers on the sidewall(s) of the gate electrode. The method also includes performing a second ion implantation process at a second implantation dosage for forming a source region and a drain region of the semiconductor switch device. The second implantation dosage is greater than the first implantation dosage.

公开(公告)号：US20150263108A1

公开(公告)日：2015-09-17

申请号：US14656359

申请日：2015-03-12

Applicant: NXP B.V.

Inventor： Johannes Donkers ,  Viet Thanh Dinh ,  Tony Vanhoucke ,  Evelyne Gridelet ,  Anco Heringa ,  Dirk Klaassen

IPC: H01L29/40 ,  H01L29/735 ,  H01L29/737 ,  H01L29/66

CPC classification number: H01L29/737 ,  H01L29/0649 ,  H01L29/205 ,  H01L29/407 ,  H01L29/66242 ,  H01L29/6625 ,  H01L29/735 ,  H01L29/7378

Abstract: The disclosure relates to bipolar transistor devices and a method of fabricating the same. The device comprises a field plate, in an isolation region adjacent to a base-collector junction of said active region. The isolation region comprises a gate terminal arranged to be biased independently of a collector, base or emitter terminal of said transistor.

Abstract translation: 本公开涉及双极晶体管器件及其制造方法。 该装置包括在与所述有源区的基极 - 集电极结相邻的隔离区中的场板。 隔离区域包括栅极端子，被布置为独立于所述晶体管的集电极，基极或发射极端子而被偏置。

公开(公告)号：US09111987B2

公开(公告)日：2015-08-18

申请号：US14259550

申请日：2014-04-23

Applicant: NXP B.V.

Inventor： Evelyne Gridelet ,  Johannes Donkers ,  Petrus Hubertus Cornelis Magnee ,  Viet Dinh ,  Tony Vanhoucke

IPC: H01L21/331 ,  H01L27/082 ,  H01L29/70 ,  H01L29/732 ,  H01L29/40 ,  H01L29/66 ,  H01L29/737

CPC classification number: H01L29/732 ,  H01L29/407 ,  H01L29/66242 ,  H01L29/66272 ,  H01L29/7378

Abstract: Consistent with an example embodiment, a bipolar transistor comprises an emitter region vertically separated from a collector region in a substrate by a base region. The bipolar transistor further comprises a field plate electrically connected to the emitter region; the field plate extends from the emitter region along the base region into the collector region and the field plate is laterally electrically insulated from the base region and the collector region by a spacer. The spacer comprises an electrically isolating material that includes a silicon nitride layer and is vertically electrically isolated from the substrate by a further electrically isolating material.

Abstract translation: 与示例实施例一致，双极晶体管包括通过基极区域与衬底中的集电极区域垂直分离的发射极区域。 双极晶体管还包括电连接到发射极区的场板; 场板沿着基极区域从发射极区域延伸到集电极区域，并且场板通过间隔物与基极区域和集电极区域横向电绝缘。 间隔物包括电绝缘材料，其包括氮化硅层，并通过另外的电绝缘材料与衬底垂直电隔离。