公开(公告)号：US10754260B2

公开(公告)日：2020-08-25

申请号：US15184612

申请日：2016-06-16

Applicant: KLA-Tencor Corporation

Inventor： Onur Demirer ,  Roie Volkovich ,  William Pierson ,  Mark Wagner ,  Dana Klein

IPC: G01C9/00 ,  G01C1/00 ,  G03F7/20

Abstract: The generation of flexible sparse metrology sample plans includes receiving a full set of metrology signals from one or more wafers from a metrology tool, determining a set of wafer properties based on the full set of metrology signals and calculating a wafer property metric associated with the set of wafer properties, calculating one or more independent characterization metrics based on the full set of metrology signals, and generating a flexible sparse sample plan based on the set of wafer properties, the wafer property metric, and the one or more independent characterization metrics. The one or more independent characterization metrics of the one or more properties calculated with metrology signals from the flexible sparse sampling plan is within a selected threshold from one or more independent characterization metrics of the one or more properties calculated with the full set of metrology signals.

公开(公告)号：US10409171B2

公开(公告)日：2019-09-10

申请号：US15867485

申请日：2018-01-10

Applicant: KLA-Tencor Corporation

Inventor： Michael E. Adel ,  Amnon Manassen ,  William Pierson ,  Ady Levy ,  Pradeep Subrahmanyan ,  Liran Yerushalmi ,  DongSub Choi ,  Hoyoung Heo ,  Dror Alumot ,  John Charles Robinson

IPC: G03B27/00 ,  G03F7/20

Abstract: A process control system may include a controller configured to receive after-development inspection (ADI) data after a lithography step for the current layer from an ADI tool, receive after etch inspection (AEI) overlay data after an exposure step of the current layer from an AEI tool, train a non-zero offset predictor with ADI data and AEI overlay data to predict a non-zero offset from input ADI data, generate values of the control parameters of the lithography tool using ADI data and non-zero offsets generated by the non-zero offset predictor, and provide the values of the control parameters to the lithography tool for fabricating the current layer on the at least one production sample.

公开(公告)号：US10340165B2

公开(公告)日：2019-07-02

申请号：US15451038

申请日：2017-03-06

Applicant: KLA-Tencor Corporation

Inventor： Jeremy Nabeth ,  Onur N. Demirer ,  Ramkumar Karur-Shanmugam ,  Choon (George) Hoong Hoo ,  Christian Sparka ,  Hoyoung Heo ,  Stuart Sherwin ,  Fatima Anis ,  Mark D. Smith ,  William Pierson

IPC: G01C1/06 ,  H01L21/67 ,  G01B11/27 ,  G06F17/50 ,  G01B11/00 ,  G03F7/20 ,  G03F9/00

Abstract: A semiconductor tool includes an illumination source to generate an illumination beam, one or more illumination optical elements to direct a portion of the illumination beam to a sample, a detector, one or more collection optical elements to direct radiation emanating from the sample to the detector, and a controller communicatively coupled to the detector. The controller is configured to measure alignment at a plurality of locations across the sample to generate alignment data, select an analysis area for alignment zone determination, divide the analysis area into two or more alignment zones having different alignment signatures; model the alignment data of at least a first alignment zone of the two or more alignment zones using a first alignment model, and model the alignment data of at least a second alignment zone of the two or more alignment zones using a second alignment model different than the first alignment model.

公开(公告)号：US20170178934A1

公开(公告)日：2017-06-22

申请号：US15261218

申请日：2016-09-09

Applicant: KLA-Tencor Corporation

Inventor： Brent A. Riggs ,  William Pierson

IPC: H01L21/67 ,  G01N21/95 ,  G01B11/27

Abstract: Adaptive alignment methods and systems are disclosed. An adaptive alignment system may include a scanner configured to align a wafer and an analyzer in communication with the scanner. The analyzer may be configured to: recognize at least one defined analysis area; determine whether any perturbations exist within the analysis area; and in response to at least one perturbation determined to be within the analysis area, invoke a fall back alignment strategy or report the at least one perturbation to the scanner.

公开(公告)号：US20160370718A1

公开(公告)日：2016-12-22

申请号：US15184612

申请日：2016-06-16

Applicant: KLA-Tencor Corporation

Inventor： Onur Demirer ,  Roie Volkovich ,  William Pierson ,  Mark Wagner ,  Dana Klein

IPC: G03F9/00

Abstract: The generation of flexible sparse metrology sample plans includes receiving a full set of metrology signals from one or more wafers from a metrology tool, determining a set of wafer properties based on the full set of metrology signals and calculating a wafer property metric associated with the set of wafer properties, calculating one or more independent characterization metrics based on the full set of metrology signals, and generating a flexible sparse sample plan based on the set of wafer properties, the wafer property metric, and the one or more independent characterization metrics. The one or more independent characterization metrics of the one or more properties calculated with metrology signals from the flexible sparse sampling plan is within a selected threshold from one or more independent characterization metrics of the one or more properties calculated with the full set of metrology signals.

Abstract translation: 柔性稀疏测量样本计划的生成包括从计量工具接收来自一个或多个晶片的全套计量信号，基于全套测量信号确定一组晶片特性，并计算与该组相关联的晶片特性度量 的晶片属性，基于整套测量信号计算一个或多个独立表征度量，以及基于所述晶片属性集合，所述晶片属性度量以及所述一个或多个独立表征度量来生成柔性稀疏样本计划。 使用来自灵活稀疏采样计划的度量信号计算出的一个或多个属性的一个或多个独立特征度量，在由所述整套度量信号计算的一个或多个属性的一个或多个独立特性度量值的选定阈值内。

公开(公告)号：US10707107B2

公开(公告)日：2020-07-07

申请号：US15261218

申请日：2016-09-09

Applicant: KLA-Tencor Corporation

Inventor： Brent A. Riggs ,  William Pierson

IPC: H01L21/67 ,  G01B11/27 ,  G03F9/00 ,  G01N21/95

Abstract: Adaptive alignment methods and systems are disclosed. An adaptive alignment system may include a scanner configured to align a wafer and an analyzer in communication with the scanner. The analyzer may be configured to: recognize at least one defined analysis area; determine whether any perturbations exist within the analysis area; and in response to at least one perturbation determined to be within the analysis area, invoke a fall back alignment strategy or report the at least one perturbation to the scanner.

公开(公告)号：US20170287754A1

公开(公告)日：2017-10-05

申请号：US15451038

申请日：2017-03-06

Applicant: KLA-Tencor Corporation

Inventor： Jeremy Nabeth ,  Onur N. Demirer ,  Ramkumar Karur-Shanmugam ,  Choon George Hoong Hoo ,  Christian Sparka ,  Hoyoung Heo ,  Stuart Sherwin ,  Fatima Anis ,  Mark D. Smith ,  William Pierson

IPC: H01L21/67 ,  G06F17/50 ,  G01B11/27

CPC classification number: H01L21/67259 ,  G01B11/002 ,  G01B11/272 ,  G01B2210/56 ,  G03F7/70633 ,  G03F9/7046 ,  G06F17/5009

Abstract: A semiconductor tool includes an illumination source to generate an illumination beam, one or more illumination optical elements to direct a portion of the illumination beam to a sample, a detector, one or more collection optical elements to direct radiation emanating from the sample to the detector, and a controller communicatively coupled to the detector. The controller is configured to measure alignment at a plurality of locations across the sample to generate alignment data, select an analysis area for alignment zone determination, divide the analysis area into two or more alignment zones having different alignment signatures; model the alignment data of at least a first alignment zone of the two or more alignment zones using a first alignment model, and model the alignment data of at least a second alignment zone of the two or more alignment zones using a second alignment model different than the first alignment model.

公开(公告)号：US20170219928A1

公开(公告)日：2017-08-03

申请号：US15256410

申请日：2016-09-02

Applicant: KLA-Tencor Corporation

Inventor： Hoyoung Heo ,  William Pierson ,  Jeremy Nabeth ,  Sanghuck Jeon ,  Onur N. Demirer ,  Miguel Garcia-Medina ,  Soujanya Vuppala

IPC: G03F7/20 ,  G06F17/50

CPC classification number: G03F7/705 ,  G03F7/70633

Abstract: Methods and systems for providing overlay corrections are provided. A method may include: selecting an overlay model configured to perform overlay modeling for a wafer; obtaining a first set of modeled results from the overlay model, the first set of modeled results indicating adjustments applicable to a plurality of term coefficients of the overlay model; calculating a significance matrix indicating the significance of the plurality of term coefficients; identifying at least one less significant term coefficient among the plurality of term coefficients based on the calculated significance matrix; obtaining a second set of modeled results from the overlay model, the second set of modeled results indicating adjustments applicable to the plurality of term coefficients except for the identified at least one less significant term coefficient; and providing the second set of modeled results to facilitate overlay correction.

公开(公告)号：US10691028B2

公开(公告)日：2020-06-23

申请号：US15256410

申请日：2016-09-02

Applicant: KLA-Tencor Corporation

Inventor： Hoyoung Heo ,  William Pierson ,  Jeremy Nabeth ,  Sanghuck Jeon ,  Onur N. Demirer ,  Miguel Garcia-Medina ,  Soujanya Vuppala

IPC: G06F17/50 ,  G03F7/20

Abstract: Methods and systems for providing overlay corrections are provided. A method may include: selecting an overlay model configured to perform overlay modeling for a wafer; obtaining a first set of modeled results from the overlay model, the first set of modeled results indicating adjustments applicable to a plurality of term coefficients of the overlay model; calculating a significance matrix indicating the significance of the plurality of term coefficients; identifying at least one less significant term coefficient among the plurality of term coefficients based on the calculated significance matrix; obtaining a second set of modeled results from the overlay model, the second set of modeled results indicating adjustments applicable to the plurality of term coefficients except for the identified at least one less significant term coefficient; and providing the second set of modeled results to facilitate overlay correction.

公开(公告)号：US20180253016A1

公开(公告)日：2018-09-06

申请号：US15843371

申请日：2017-12-15

Applicant: KLA-Tencor Corporation

Inventor： Onur Nihat Demirer ,  William Pierson ,  Mark D. Smith ,  Jeremy S. Nabeth ,  Miguel Garcia-Medina ,  Lipkong Yap

IPC: G03F7/20 ,  H01L21/027

CPC classification number: G03F7/70633 ,  G03F7/70258 ,  G03F7/705 ,  G03F9/7046 ,  H01L21/0274

Abstract: A process control system includes a controller configured to generate a reference overlay signature based on one or more overlay reference layers of a sample, extrapolate the reference overlay signature to a set of correctable fields for the exposure of a current layer of the sample to generate a full-field reference overlay signature, identify one or more alignment fields of the set of correctable fields, generate an alignment-correctable signature by modeling alignment corrections for the set of correctable fields, subtract the alignment-correctable signature from the full-field reference overlay signature to generate feedforward overlay corrections for the current layer when the one or more overlay reference layers are the same as the one or more alignment reference layers, generate lithography tool corrections based on the feedforward overlay corrections, and provide the lithography tool corrections for the current layer to the lithography tool.