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公开(公告)号：US20130336572A1
公开(公告)日：2013-12-19
申请号：US13908623
申请日：2013-06-03
发明人： DongSub Choi , Bill Pierson , David Tien , James Manka , Dongsuk Park
CPC分类号： G06T7/0004 , G03F1/00 , G03F7/70641 , G06T7/0002 , G06T2207/30148 , G06T2207/30168
摘要： A method for monitoring mask focus includes measuring profile asymmetries in a target feature including sub-resolution assist features and deriving a focus response based on a known correlation between the profile and focus of a corresponding mask. A computer system in a lithographic process may adjust mask focus based on such derived information to conform to a desired fabrication process.
摘要翻译： 用于监测掩模焦点的方法包括测量目标特征中的轮廓不对称性，包括子分辨率辅助特征，并且基于对应掩模的轮廓和焦点之间的已知相关性导出聚焦响应。 光刻工艺中的计算机系统可以基于这样的导出信息来调整掩模焦点以符合所需的制造工艺。
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公开(公告)号：US10725385B2
公开(公告)日：2020-07-28
申请号：US16101057
申请日：2018-08-10
发明人： Tsachy Holovinger , Liran Yerushalmi , David Tien , DongSub Choi
摘要： A method may include, but is not limited to, receiving a measurement including a metrology parameter for a layer of a metrology target and an alignment mark from an overlay metrology tool prior to a lithography process; deriving a merit figure from the metrology parameter and the alignment mark; deriving a correction factor from the merit figure; providing the correction factor to the lithography process via a feed forward process; receiving an additional measurement including an additional metrology parameter for the layer and an additional layer from an additional overlay metrology tool after the lithography process; deriving an adjustment from the additional metrology parameter; and providing the adjustment to the lithography process via a feedback process.
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公开(公告)号：US09466100B2
公开(公告)日：2016-10-11
申请号：US13908623
申请日：2013-06-03
发明人： DongSub Choi , Bill Pierson , David Tien , James Manka , Dongsuk Park
CPC分类号： G06T7/0004 , G03F1/00 , G03F7/70641 , G06T7/0002 , G06T2207/30148 , G06T2207/30168
摘要： A method for monitoring mask focus includes measuring profile asymmetries in a target feature including sub-resolution assist features and deriving a focus response based on a known correlation between the profile and focus of a corresponding mask. A computer system in a lithographic process may adjust mask focus based on such derived information to conform to a desired fabrication process.
摘要翻译： 用于监测掩模焦点的方法包括测量目标特征中的轮廓不对称性，包括子分辨率辅助特征，并且基于对应掩模的轮廓和焦点之间的已知相关性导出聚焦响应。 光刻工艺中的计算机系统可以基于这样的导出信息来调整掩模焦点以符合所需的制造工艺。
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公开(公告)号：US20160131983A1
公开(公告)日：2016-05-12
申请号：US15002129
申请日：2016-01-20
发明人： Tsachy Holovinger , Liran Yerushalmi , David Tien , DongSub Choi
IPC分类号： G03F9/00
CPC分类号： G03F7/70633 , G03F9/7003 , H01L22/12 , H01L22/20
摘要： Methods and corresponding metrology modules and systems, which measure metrology parameter(s) of a previous layer of a metrology target and/or an alignment mark, prior to producing a current layer of the metrology target, derive merit figure(s) from the measured metrology parameter(s) to indicate an inaccuracy, and compensate for the inaccuracy to enhance subsequent overlay measurements of the metrology target. In an example embodiment, methods and corresponding metrology modules and systems use stand-alone metrology tool(s) and track-integrated metrology tool(s) at distinct measurement patterns to address separately different aspects of variation among wafers.
摘要翻译： 在产生计量目标的当前层之前测量计量学目标和/或对准标记的先前层的测量参数的方法和相应的计量模块和系统从测量的目标层导出优点图 测量参数，以指示不准确性，并补偿不准确度以增强计量目标的后续叠加测量。 在示例实施例中，方法和对应的度量模块和系统使用独立的测量工具和轨道集成度量工具以不同的测量模式分别解决不同晶片之间变化的方面。
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公开(公告)号：US20180253017A1
公开(公告)日：2018-09-06
申请号：US15867485
申请日：2018-01-10
发明人： Michael E. Adel , Amnon Manassen , William Pierson , Ady Levy , Pradeep Subrahmanyan , Liran Yerushalmi , DongSub Choi , Hoyoung Heo , Dror Alumot , John Charles Robinson
IPC分类号： G03F7/20
CPC分类号： G03F7/70633 , G03F7/705 , G03F7/70508 , G03F7/7085
摘要： A process control system may include a controller configured to receive after-development inspection (ADI) data after a lithography step for the current layer from an ADI tool, receive after etch inspection (AEI) overlay data after an exposure step of the current layer from an AEI tool, train a non-zero offset predictor with ADI data and AEI overlay data to predict a non-zero offset from input ADI data, generate values of the control parameters of the lithography tool using ADI data and non-zero offsets generated by the non-zero offset predictor, and provide the values of the control parameters to the lithography tool for fabricating the current layer on the at least one production sample.
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公开(公告)号：US09476838B2
公开(公告)日：2016-10-25
申请号：US14338023
申请日：2014-07-22
发明人： DongSub Choi , Tal Itzkovich , David Tien
IPC分类号： G01N21/00 , G01N21/95 , G01N21/93 , G01N21/956 , G03F7/20
CPC分类号： G01N21/9501 , G01N21/93 , G01N21/956 , G03F7/70633 , G03F7/70683
摘要： Metrology targets, design files, and design and production methods thereof are provided. The metrology targets are hybrid in that they comprise at least one imaging target structure configured to be measurable by imaging and at least one scatterometry target structure configured to be measurable by scatterometry. Thus, the hybrid targets may be measured by imaging and scatterometry simultaneously or alternatingly and/or the measurement techniques may be optimized with respect to wafer regions and other spatial parameters, as well as with respect to temporal process parameters. The hybrid targets may be used to monitor process parameters, for example via comparative overlay measurements and/or high resolution measurements.
摘要翻译： 提供了计量目标，设计文件及其设计和制作方法。 度量目标是混合的，因为它们包括被配置为可通过成像测量的至少一个成像目标结构和被配置为可通过散射测量来测量的至少一个散射测量目标结构。 因此，可以通过成像和散射测量同时或交替地测量混合目标，和/或可以相对于晶片区域和其他空间参数以及关于时间过程参数优化测量技术。 混合目标可以用于监测过程参数，例如通过比较覆盖测量和/或高分辨率测量。
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公开(公告)号：US10409171B2
公开(公告)日：2019-09-10
申请号：US15867485
申请日：2018-01-10
发明人： Michael E. Adel , Amnon Manassen , William Pierson , Ady Levy , Pradeep Subrahmanyan , Liran Yerushalmi , DongSub Choi , Hoyoung Heo , Dror Alumot , John Charles Robinson
摘要： A process control system may include a controller configured to receive after-development inspection (ADI) data after a lithography step for the current layer from an ADI tool, receive after etch inspection (AEI) overlay data after an exposure step of the current layer from an AEI tool, train a non-zero offset predictor with ADI data and AEI overlay data to predict a non-zero offset from input ADI data, generate values of the control parameters of the lithography tool using ADI data and non-zero offsets generated by the non-zero offset predictor, and provide the values of the control parameters to the lithography tool for fabricating the current layer on the at least one production sample.
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公开(公告)号：US20180348649A1
公开(公告)日：2018-12-06
申请号：US16101057
申请日：2018-08-10
发明人： Tsachy Holovinger , Liran Yerushalmi , David Tien , DongSub Choi
摘要： A method may include, but is not limited to, receiving a measurement including a metrology parameter for a layer of a metrology target and an alignment mark from an overlay metrology tool prior to a lithography process; deriving a merit figure from the metrology parameter and the alignment mark; deriving a correction factor from the merit figure; providing the correction factor to the lithography process via a feed forward process; receiving an additional measurement including an additional metrology parameter for the layer and an additional layer from an additional overlay metrology tool after the lithography process; deriving an adjustment from the additional metrology parameter; and providing the adjustment to the lithography process via a feedback process.
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公开(公告)号：US10095121B2
公开(公告)日：2018-10-09
申请号：US15002129
申请日：2016-01-20
发明人： Tsachy Holovinger , Liran Yerushalmi , David Tien , DongSub Choi
摘要： Methods and corresponding metrology modules and systems, which measure metrology parameter(s) of a previous layer of a metrology target and/or an alignment mark, prior to producing a current layer of the metrology target, derive merit figure(s) from the measured metrology parameter(s) to indicate an inaccuracy, and compensate for the inaccuracy to enhance subsequent overlay measurements of the metrology target. In an example embodiment, methods and corresponding metrology modules and systems use stand-alone metrology tool(s) and track-integrated metrology tool(s) at distinct measurement patterns to address separately different aspects of variation among wafers.
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公开(公告)号：US20140375984A1
公开(公告)日：2014-12-25
申请号：US14338023
申请日：2014-07-22
发明人： DongSub Choi , Tal Itzkovich , David Tien
IPC分类号： G01N21/95
CPC分类号： G01N21/9501 , G01N21/93 , G01N21/956 , G03F7/70633 , G03F7/70683
摘要： Metrology targets, design files, and design and production methods thereof are provided. The metrology targets are hybrid in that they comprise at least one imaging target structure configured to be measurable by imaging and at least one scatterometry target structure configured to be measurable by scatterometry. Thus, the hybrid targets may be measured by imaging and scatterometry simultaneously or alternatingly and/or the measurement techniques may be optimized with respect to wafer regions and other spatial parameters, as well as with respect to temporal process parameters. The hybrid targets may be used to monitor process parameters, for example via comparative overlay measurements and/or high resolution measurements.
摘要翻译： 提供了计量目标，设计文件及其设计和制作方法。 度量目标是混合的，因为它们包括被配置为可通过成像测量的至少一个成像目标结构和被配置为可通过散射测量来测量的至少一个散射测量目标结构。 因此，可以通过成像和散射测量同时或交替地测量混合目标，和/或可以相对于晶片区域和其他空间参数以及关于时间过程参数优化测量技术。 混合目标可以用于监测过程参数，例如通过比较覆盖测量和/或高分辨率测量。
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