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公开(公告)号：US20160131983A1
公开(公告)日：2016-05-12
申请号：US15002129
申请日：2016-01-20
Applicant: KLA-Tencor Corporation
Inventor： Tsachy Holovinger , Liran Yerushalmi , David Tien , DongSub Choi
IPC: G03F9/00
CPC classification number: G03F7/70633 , G03F9/7003 , H01L22/12 , H01L22/20
Abstract: Methods and corresponding metrology modules and systems, which measure metrology parameter(s) of a previous layer of a metrology target and/or an alignment mark, prior to producing a current layer of the metrology target, derive merit figure(s) from the measured metrology parameter(s) to indicate an inaccuracy, and compensate for the inaccuracy to enhance subsequent overlay measurements of the metrology target. In an example embodiment, methods and corresponding metrology modules and systems use stand-alone metrology tool(s) and track-integrated metrology tool(s) at distinct measurement patterns to address separately different aspects of variation among wafers.
Abstract translation: 在产生计量目标的当前层之前测量计量学目标和/或对准标记的先前层的测量参数的方法和相应的计量模块和系统从测量的目标层导出优点图 测量参数，以指示不准确性，并补偿不准确度以增强计量目标的后续叠加测量。 在示例实施例中，方法和对应的度量模块和系统使用独立的测量工具和轨道集成度量工具以不同的测量模式分别解决不同晶片之间变化的方面。
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公开(公告)号：US10725385B2
公开(公告)日：2020-07-28
申请号：US16101057
申请日：2018-08-10
Applicant: KLA-Tencor Corporation
Inventor： Tsachy Holovinger , Liran Yerushalmi , David Tien , DongSub Choi
Abstract: A method may include, but is not limited to, receiving a measurement including a metrology parameter for a layer of a metrology target and an alignment mark from an overlay metrology tool prior to a lithography process; deriving a merit figure from the metrology parameter and the alignment mark; deriving a correction factor from the merit figure; providing the correction factor to the lithography process via a feed forward process; receiving an additional measurement including an additional metrology parameter for the layer and an additional layer from an additional overlay metrology tool after the lithography process; deriving an adjustment from the additional metrology parameter; and providing the adjustment to the lithography process via a feedback process.
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公开(公告)号：US20180348649A1
公开(公告)日：2018-12-06
申请号：US16101057
申请日：2018-08-10
Applicant: KLA-Tencor Corporation
Inventor： Tsachy Holovinger , Liran Yerushalmi , David Tien , DongSub Choi
Abstract: A method may include, but is not limited to, receiving a measurement including a metrology parameter for a layer of a metrology target and an alignment mark from an overlay metrology tool prior to a lithography process; deriving a merit figure from the metrology parameter and the alignment mark; deriving a correction factor from the merit figure; providing the correction factor to the lithography process via a feed forward process; receiving an additional measurement including an additional metrology parameter for the layer and an additional layer from an additional overlay metrology tool after the lithography process; deriving an adjustment from the additional metrology parameter; and providing the adjustment to the lithography process via a feedback process.
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公开(公告)号：US10095121B2
公开(公告)日：2018-10-09
申请号：US15002129
申请日：2016-01-20
Applicant: KLA-Tencor Corporation
Inventor： Tsachy Holovinger , Liran Yerushalmi , David Tien , DongSub Choi
Abstract: Methods and corresponding metrology modules and systems, which measure metrology parameter(s) of a previous layer of a metrology target and/or an alignment mark, prior to producing a current layer of the metrology target, derive merit figure(s) from the measured metrology parameter(s) to indicate an inaccuracy, and compensate for the inaccuracy to enhance subsequent overlay measurements of the metrology target. In an example embodiment, methods and corresponding metrology modules and systems use stand-alone metrology tool(s) and track-integrated metrology tool(s) at distinct measurement patterns to address separately different aspects of variation among wafers.
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