知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

13 records (took 0.013 seconds)

    Three-Dimensional Mapping of a Wafer
    2.
    发明申请
    Three-Dimensional Mapping of a Wafer 审中-公开

    公开(公告)号：US20180245910A1

    公开(公告)日：2018-08-30

    申请号：US15281175

    申请日：2016-09-30

    Applicant: KLA-Tencor Corporation

    Inventor： Vincent Sebastian Immer ,  Naomi Ittah ,  Tal Marciano

    IPC: G01B11/24 ,  G01B11/22

    CPC classification number: G01B11/24 ,  G01B11/22 ,  G03F7/70633 ,  H01L22/12

    Abstract: Methods and scatterometry overlay metrology tools are provided, which scan a wafer region, perform focus measurements during the scanning to extract therefrom phase information, and derive depth data of the scanned wafer region from the extracted phase information. The depth information, relating to a dimension perpendicular to the wafer, may be derived along lines or surfaces, providing profilometry and surface data, respectively. The depth data may be used to locate metrology targets, as well as to provide material properties concerning wafer layers, to estimate process variation and to improve the overlay measurements.

    Three-dimensional mapping of a wafer
    3.
    发明授权
    Three-dimensional mapping of a wafer 有权

    公开(公告)号：US10317198B2

    公开(公告)日：2019-06-11

    申请号：US15281175

    申请日：2016-09-30

    Applicant: KLA-Tencor Corporation

    Inventor： Vincent Sebastian Immer ,  Naomi Ittah ,  Tal Marciano

    IPC: G01B11/24 ,  H01L21/66 ,  G01B11/22 ,  G03F7/20

    Abstract: Methods and scatterometry overlay metrology tools are provided, which scan a wafer region, perform focus measurements during the scanning to extract therefrom phase information, and derive depth data of the scanned wafer region from the extracted phase information. The depth information, relating to a dimension perpendicular to the wafer, may be derived along lines or surfaces, providing profilometry and surface data, respectively. The depth data may be used to locate metrology targets, as well as to provide material properties concerning wafer layers, to estimate process variation and to improve the overlay measurements.

    Estimating and eliminating inter-cell process variation inaccuracy
    6.
    发明授权
    Estimating and eliminating inter-cell process variation inaccuracy 有权

    公开(公告)号：US10415963B2

    公开(公告)日：2019-09-17

    申请号：US14727038

    申请日：2015-06-01

    Applicant: KLA-Tencor Corporation

    Inventor： Tal Marciano ,  Eran Amit ,  Barak Bringoltz ,  Nuriel Amir ,  Amit Shaked

    IPC: G06F17/50 ,  G01B11/27

    Abstract: Metrology methods and targets are provided, for estimating inter-cell process variation by deriving, from overlay measurements of at least three target cells having different designed misalignments, a dependency of a measured inaccuracy on the designed misalignments (each designed misalignment is between at least two overlapping periodic structures in the respective target cell). Inaccuracies which are related to the designed misalignments are reduced, process variation sources are detected and targets and measurement algorithms are optimized according to the derived dependency.

    METHODS OF ANALYZING AND UTILIZING LANDSCAPES TO REDUCE OR ELIMINATE INACCURACY IN OVERLAY OPTICAL METROLOGY
    8.
    发明申请
    METHODS OF ANALYZING AND UTILIZING LANDSCAPES TO REDUCE OR ELIMINATE INACCURACY IN OVERLAY OPTICAL METROLOGY 审中-公开
    分析和利用景观以减少或消除在重叠光学计量学中不精确的方法

    公开(公告)号：US20160313658A1

    公开(公告)日：2016-10-27

    申请号：US15198902

    申请日：2016-06-30

    Applicant: KLA-TENCOR CORPORATION

    Inventor： Tal Marciano ,  Barak Bringoltz ,  Evgeni Gurevich ,  Ido Adam ,  Ze'ev Lindenfeld ,  Zeng Zhao ,  Yoel Feler ,  Daniel Kandel ,  Nadav Carmel ,  Amnon Manassen ,  Nuriel Amir ,  Oded Kaminsky ,  Tal Yaziv ,  Ofer Zaharan ,  Moshe Cooper ,  Roee Sulimarski ,  Tom Leviant ,  Noga Sella ,  Boris Efraty ,  Lilach Saltoun ,  Amir Handelman ,  Eltsafon Ashwal ,  Ohad Bachar

    IPC: G03F9/00

    Abstract: Methods are provided for deriving a partially continuous dependency of metrology metric(s) on recipe parameter(s), analyzing the derived dependency, determining a metrology recipe according to the analysis, and conducting metrology measurement(s) according to the determined recipe. The dependency may be analyzed in form of a landscape such as a sensitivity landscape in which regions of low sensitivity and/or points or contours of low or zero inaccuracy are detected, analytically, numerically or experimentally, and used to configure parameters of measurement, hardware and targets to achieve high measurement accuracy. Process variation is analyzed in terms of its effects on the sensitivity landscape, and these effects are used to characterize the process variation further, to optimize the measurements and make the metrology both more robust to inaccuracy sources and more flexible with respect to different targets on the wafer and available measurement conditions.

    Abstract translation: 提供了用于导出计量度量对配方参数的部分连续依赖性的方法，分析衍生依赖性，根据分析确定计量配方，并根据确定的配方进行计量测量。 依赖性可以以景观的形式进行分析，例如灵敏度景观，其中检测到低分辨率或零误差的低灵敏度和/或点或等值线的区域，分析，数字或实验，并用于配置测量参数，硬件 并达到高测量精度。 根据其对灵敏度景观的影响分析过程变化，并且这些效应用于进一步表征过程变化，优化测量结果，使计量学对于不准确性来源更加鲁棒，并且对于不同的目标更灵活 晶圆和可用的测量条件。

    Identifying process variations during product manufacture
    10.
    发明授权
    Identifying process variations during product manufacture 有权

    公开(公告)号：US10379449B2

    公开(公告)日：2019-08-13

    申请号：US15760787

    申请日：2018-02-07

    Applicant: KLA-TENCOR CORPORATION

    Inventor： Tzahi Grunzweig ,  Nadav Gutman ,  Claire E. Staniunas ,  Tal Marciano ,  Nimrod Shuall

    IPC: G03F7/20 ,  H01L21/66 ,  G01N21/01

    Abstract: Systems and method are presented for identifying process variations during manufacture of products such as semiconductor wafers. At a predetermined stage during manufacture of a first products, images of an area of the first product are obtained using different values of at least one imaging parameter. The images are then analyzed to generate a first contrast signature for said first product indicating variations of contrast with said at least one imaging parameter. At the same predetermined stage during manufacture of a second product, images of an area of said second product are obtained corresponding to said area of said first product using different values of said at least one imaging parameter. The images are analyzed to generate a second contrast signature for said second product indicating variations of contrast with said at least one imaging parameter. The first and second contrast signatures are compared to identify whether a variation in process occurred between manufacture of said first and second products.

Patent Agency Ranking