Methods And Systems For Nanoscale Imaging Based On Second Harmonic Signal Generation And Through-Focus Scanning Optical Microscopy

    公开(公告)号:US20240353352A1

    公开(公告)日:2024-10-24

    申请号:US18626240

    申请日:2024-04-03

    申请人: KLA Corporation

    发明人: Qiang Zhao Ming Di

    IPC分类号: G01N21/95 G01N21/88

    CPC分类号: G01N21/9505 G01N21/8806

    摘要: Methods and systems for improved detection of defects of interest and measurement of structures buried within complex three dimensional semiconductor structures are described herein. Through-focus scanning optical microscopy (TSOM) using non-linear, second harmonic generation (SHG) light signals emitted from a sample provides interface-selective sensitivity for metrology and inspection of advanced semiconductor structures. A TSOM/SHG system includes a spectral filter to pass collected light at wavelengths corresponding to SHG emission. In some embodiments, a TSOM/SHG system includes an ultrafast, pulsed laser source emitting ultraviolet to near infrared wavelengths to efficiently induce SHG at surface interfaces. The halving of wavelength inherent to SHG enables a doubling of illumination wavelength without penalizing resolution. In a further aspect, a TSOM/SHG measurement system includes an exogenous illumination source, an external electric field source, or both, to induce a DC electric field at one or more interfaces of structures under illumination, thereby enhancing SHG emission.

    Dispersion model for band gap tracking

    公开(公告)号:US10770362B1

    公开(公告)日:2020-09-08

    申请号:US16529495

    申请日:2019-08-01

    申请人: KLA Corporation

    摘要: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical models of semiconductor structures capable of accurate characterization of defects in high-K dielectric layers and embedded nanostructures are presented. In one example, the optical dispersion model includes a continuous Cody-Lorentz model having continuous first derivatives that is sensitive to a band gap of a layer of the unfinished, multi-layer semiconductor wafer. These models quickly and accurately represent experimental results in a physically meaningful manner. The model parameter values can be subsequently used to gain insight and control over a manufacturing process.

    Measurements Of Semiconductor Structures Based On Spectral Differences At Different Process Steps

    公开(公告)号:US20240186191A1

    公开(公告)日:2024-06-06

    申请号:US18210571

    申请日:2023-06-15

    申请人: KLA Corporation

    IPC分类号: H01L21/66 G01J3/02 G01J3/28

    摘要: Methods and systems for measuring values of one or more parameters of interest, including changes in values of one or more parameters of interest, based on measured spectral differences are presented herein. A trained spectral difference based measurement model determines changes in the values of one or more parameters of interest based on a measure of differences in spectra measured before and after one or more process steps. In some examples, a measure of spectral difference is determined based on a difference in measured intensity, a difference in harmonic signal values, or a difference in value of one or more Mueller Matrix elements. A measure of spectral difference may be expressed as a set of difference values, a scalar value, or coefficients of a functional fit to difference values. A measure of spectral difference may be determined based on a weighting of spectral differences according to wavelength.

    INTERFACE-BASED DEFECT INSPECTION USING SECOND HARMONIC GENERATION

    公开(公告)号:US20240221149A1

    公开(公告)日:2024-07-04

    申请号:US18132857

    申请日:2023-04-10

    申请人: KLA Corporation

    发明人: Qiang Zhao Ming Di

    IPC分类号: G06T7/00 G01N21/95 G06T7/55

    摘要: An inspection system may perform an inspection recipe by receiving reference SHG images of a reference structure based on a scan of the reference structure with an illumination beam and collecting second harmonic generation (SHG) light in response to the illumination beam, where the reference structure includes a multilayer structure including one or more inversion-symmetric materials. The system may further receive test SHG images of a test structure based on a scan of the test structure by illuminating the test structure with the illumination beam and collecting the SHG light in response to the illumination beam, where the test structure and the reference structure have a common design. The system may further identify defects in the test structure by comparing the test and reference SHG images.

    INTERFACE-BASED THIN FILM METROLOGY USING SECOND HARMONIC GENERATION

    公开(公告)号:US20240176206A1

    公开(公告)日:2024-05-30

    申请号:US18116187

    申请日:2023-03-01

    申请人: KLA Corporation

    IPC分类号: G02F1/35 G01N21/63 G01N21/95

    摘要: A metrology system may include an illumination source to generate an illumination beam and an illumination sub-system to direct the illumination beam to a sample with an inversion-symmetric substrate and one or more films disposed on the inversion-symmetric substrate. The system may further include a filter configured to block a wavelength of the illumination beam and pass a wavelength associated with a second harmonic of the illumination beam and a detector to capture second harmonic generation (SHG) light. The system may further include a controller to receive metrology data from the detector associated with the SHG light from with an interface between the inversion-symmetric substrate and the one or more films and generate one or more metrology measurements associated with the one or more films based on the metrology data.