- 专利标题: Measurements Of Semiconductor Structures Based On Spectral Differences At Different Process Steps
-
申请号: US18210571申请日: 2023-06-15
-
公开(公告)号: US20240186191A1公开(公告)日: 2024-06-06
- 发明人: Ming Di , Qiang Zhao , Tianhao Zhang , Dawei Hu , Yih Chang , Xi Chen
- 申请人: KLA Corporation
- 申请人地址: US CA Milpitas
- 专利权人: KLA Corporation
- 当前专利权人: KLA Corporation
- 当前专利权人地址: US CA Milpitas
- 主分类号: H01L21/66
- IPC分类号: H01L21/66 ; G01J3/02 ; G01J3/28
摘要:
Methods and systems for measuring values of one or more parameters of interest, including changes in values of one or more parameters of interest, based on measured spectral differences are presented herein. A trained spectral difference based measurement model determines changes in the values of one or more parameters of interest based on a measure of differences in spectra measured before and after one or more process steps. In some examples, a measure of spectral difference is determined based on a difference in measured intensity, a difference in harmonic signal values, or a difference in value of one or more Mueller Matrix elements. A measure of spectral difference may be expressed as a set of difference values, a scalar value, or coefficients of a functional fit to difference values. A measure of spectral difference may be determined based on a weighting of spectral differences according to wavelength.
信息查询
IPC分类: