公开(公告)号：US10770362B1

公开(公告)日：2020-09-08

申请号：US16529495

申请日：2019-08-01

Applicant: KLA Corporation

Inventor： Natalia Malkova ,  Leonid Poslavsky ,  Ming Di ,  Qiang Zhao ,  Dawei Hu

IPC: H01L21/66 ,  G01R31/28 ,  G01N21/27 ,  G01R31/308

Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical models of semiconductor structures capable of accurate characterization of defects in high-K dielectric layers and embedded nanostructures are presented. In one example, the optical dispersion model includes a continuous Cody-Lorentz model having continuous first derivatives that is sensitive to a band gap of a layer of the unfinished, multi-layer semiconductor wafer. These models quickly and accurately represent experimental results in a physically meaningful manner. The model parameter values can be subsequently used to gain insight and control over a manufacturing process.